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PUBMED FOR HANDHELDS

Journal Abstract Search


657 related items for PubMed ID: 20853868

  • 1. Surface effects on the atomic and electronic structure of unpassivated GaAs nanowires.
    Rosini M, Magri R.
    ACS Nano; 2010 Oct 26; 4(10):6021-31. PubMed ID: 20853868
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  • 2. An ab initio study of energetic stability and electronic confinement for different structural phases of ZnO nanowires.
    Schmidt TM, Miwa RH.
    Nanotechnology; 2009 May 27; 20(21):215202. PubMed ID: 19423926
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  • 9. Anisotropic photonic properties of III-V nanowires in the zinc-blende and wurtzite phase.
    Wilhelm C, Larrue A, Dai X, Migas D, Soci C.
    Nanoscale; 2012 Mar 07; 4(5):1446-54. PubMed ID: 22327202
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  • 13. Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.
    Dheeraj DL, Patriarche G, Largeau L, Zhou HL, van Helvoort AT, Glas F, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2008 Jul 09; 19(27):275605. PubMed ID: 21828712
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  • 14. Twinning superlattices in indium phosphide nanowires.
    Algra RE, Verheijen MA, Borgström MT, Feiner LF, Immink G, van Enckevort WJ, Vlieg E, Bakkers EP.
    Nature; 2008 Nov 20; 456(7220):369-72. PubMed ID: 19020617
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  • 16. Synthesis and raman scattering from Zn(1-x)Mn(x)S diluted magnetic semiconductor nanowires.
    Wu J, Gutierrez HR, Eklund PC.
    J Nanosci Nanotechnol; 2008 Jan 20; 8(1):393-9. PubMed ID: 18468089
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  • 19. The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires.
    Paiman S, Gao Q, Tan HH, Jagadish C, Pemasiri K, Montazeri M, Jackson HE, Smith LM, Yarrison-Rice JM, Zhang X, Zou J.
    Nanotechnology; 2009 Jun 03; 20(22):225606. PubMed ID: 19436086
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  • 20. Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.
    Kriegner D, Wintersberger E, Kawaguchi K, Wallentin J, Borgström MT, Stangl J.
    Nanotechnology; 2011 Oct 21; 22(42):425704. PubMed ID: 21937785
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