These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


PUBMED FOR HANDHELDS

Journal Abstract Search


364 related items for PubMed ID: 20858929

  • 1.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 2.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 3. Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments.
    Zhuge F, Peng S, He C, Zhu X, Chen X, Liu Y, Li RW.
    Nanotechnology; 2011 Jul 08; 22(27):275204. PubMed ID: 21613680
    [Abstract] [Full Text] [Related]

  • 4. Temperature effects on the switching kinetics of a Cu-Ta2O5-based atomic switch.
    Tsuruoka T, Terabe K, Hasegawa T, Aono M.
    Nanotechnology; 2011 Jun 24; 22(25):254013. PubMed ID: 21572189
    [Abstract] [Full Text] [Related]

  • 5. Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films.
    Baek H, Lee C, Choi J, Cho J.
    Langmuir; 2013 Jan 08; 29(1):380-6. PubMed ID: 23210494
    [Abstract] [Full Text] [Related]

  • 6.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 7.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 8.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 9.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 10. Effect of electrode materials on AlN-based bipolar and complementary resistive switching.
    Chen C, Gao S, Tang G, Fu H, Wang G, Song C, Zeng F, Pan F.
    ACS Appl Mater Interfaces; 2013 Mar 13; 5(5):1793-9. PubMed ID: 23422310
    [Abstract] [Full Text] [Related]

  • 11.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 12.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 13. Abnormal bipolar-like resistance change behavior induced by symmetric electroforming in Pt/TiO2/Pt resistive switching cells.
    Jeong DS, Schroeder H, Waser R.
    Nanotechnology; 2009 Sep 16; 20(37):375201. PubMed ID: 19706954
    [Abstract] [Full Text] [Related]

  • 14.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 15.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 16. Investigation of bipolar resistive switching and the time-dependent SET process in silver sulfide/silver thin films and nanowire array structures.
    Pi C, Ren Y, Chim WK.
    Nanotechnology; 2010 Feb 26; 21(8):85709. PubMed ID: 20097983
    [Abstract] [Full Text] [Related]

  • 17.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 18. Resistive switching behavior and multiple transmittance states in solution-processed tungsten oxide.
    Wu WT, Wu JJ, Chen JS.
    ACS Appl Mater Interfaces; 2011 Jul 26; 3(7):2616-21. PubMed ID: 21702504
    [Abstract] [Full Text] [Related]

  • 19. Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays.
    Kim HD, Yun MJ, Hong SM, Kim TG.
    Nanotechnology; 2014 Mar 28; 25(12):125201. PubMed ID: 24569107
    [Abstract] [Full Text] [Related]

  • 20. Compliance current controlled volatile and nonvolatile memory in Ag/CoFe2O4/Pt resistive switching device.
    Munjal S, Khare N.
    Nanotechnology; 2021 Apr 30; 32(18):185204. PubMed ID: 33470980
    [Abstract] [Full Text] [Related]


    Page: [Next] [New Search]
    of 19.