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Journal Abstract Search

273 related items for PubMed ID: 20932012

  • 1. Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111).
    Krogstrup P, Popovitz-Biro R, Johnson E, Madsen MH, Nygård J, Shtrikman H.
    Nano Lett; 2010 Nov 10; 10(11):4475-82. PubMed ID: 20932012
    [Abstract] [Full Text] [Related]

  • 2. GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions.
    Sadowski J, Dłuzewski P, Kret S, Janik E, Lusakowska E, Kanski J, Presz A, Terki F, Charar S, Tang D.
    Nano Lett; 2007 Sep 10; 7(9):2724-8. PubMed ID: 17718585
    [Abstract] [Full Text] [Related]

  • 3. Stacking-faults-free zinc Blende GaAs nanowires.
    Shtrikman H, Popovitz-Biro R, Kretinin A, Heiblum M.
    Nano Lett; 2009 Jan 10; 9(1):215-9. PubMed ID: 19093840
    [Abstract] [Full Text] [Related]

  • 4. Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.
    Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE.
    Nano Lett; 2008 Jun 10; 8(6):1638-43. PubMed ID: 18471022
    [Abstract] [Full Text] [Related]

  • 5. Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask.
    Hsu CW, Chen YF, Su YK.
    Nanotechnology; 2012 Dec 14; 23(49):495306. PubMed ID: 23154824
    [Abstract] [Full Text] [Related]

  • 6. P-doping mechanisms in catalyst-free gallium arsenide nanowires.
    Dufouleur J, Colombo C, Garma T, Ketterer B, Uccelli E, Nicotra M, Fontcuberta i Morral A.
    Nano Lett; 2010 May 12; 10(5):1734-40. PubMed ID: 20373777
    [Abstract] [Full Text] [Related]

  • 7. Self-healing of fractured GaAs nanowires.
    Wang Y, Joyce HJ, Gao Q, Liao X, Tan HH, Zou J, Ringer SP, Shan Z, Jagadish C.
    Nano Lett; 2011 Apr 13; 11(4):1546-9. PubMed ID: 21417399
    [Abstract] [Full Text] [Related]

  • 8. Self-directed growth of AlGaAs core-shell nanowires for visible light applications.
    Chen C, Shehata S, Fradin C, LaPierre R, Couteau C, Weihs G.
    Nano Lett; 2007 Sep 13; 7(9):2584-9. PubMed ID: 17696557
    [Abstract] [Full Text] [Related]

  • 9. Fast growth synthesis of GaAs nanowires with exceptional length.
    Ramdani MR, Gil E, Leroux Ch, André Y, Trassoudaine A, Castelluci D, Bideux L, Monier G, Robert-Goumet C, Kupka R.
    Nano Lett; 2010 May 12; 10(5):1836-41. PubMed ID: 20380477
    [Abstract] [Full Text] [Related]

  • 10. Multiple quantum well AlGaAs nanowires.
    Chen C, Braidy N, Couteau C, Fradin C, Weihs G, LaPierre R.
    Nano Lett; 2008 Feb 12; 8(2):495-9. PubMed ID: 18184023
    [Abstract] [Full Text] [Related]

  • 11. Growth of silver nanowires on GaAs wafers.
    Sun Y.
    Nanoscale; 2011 May 12; 3(5):2247-55. PubMed ID: 21483977
    [Abstract] [Full Text] [Related]

  • 12. Crystal structure transfer in core/shell nanowires.
    Algra RE, Hocevar M, Verheijen MA, Zardo I, Immink GG, van Enckevort WJ, Abstreiter G, Kouwenhoven LP, Vlieg E, Bakkers EP.
    Nano Lett; 2011 Apr 13; 11(4):1690-4. PubMed ID: 21417242
    [Abstract] [Full Text] [Related]

  • 13. GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy.
    Ouattara L, Mikkelsen A, Sköld N, Eriksson J, Knaapen T, Cavar E, Seifert W, Samuelson L, Lundgren E.
    Nano Lett; 2007 Sep 13; 7(9):2859-64. PubMed ID: 17722945
    [Abstract] [Full Text] [Related]

  • 14. Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates.
    Ihn SG, Song JI, Kim TW, Leem DS, Lee T, Lee SG, Koh EK, Song K.
    Nano Lett; 2007 Jan 13; 7(1):39-44. PubMed ID: 17212437
    [Abstract] [Full Text] [Related]

  • 15. Gold-catalyzed vapor-liquid-solid germanium-nanowire nucleation on porous silicon.
    Koto M, Marshall AF, Goldthorpe IA, McIntyre PC.
    Small; 2010 May 07; 6(9):1032-7. PubMed ID: 20411571
    [Abstract] [Full Text] [Related]

  • 16. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
    Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.
    Small; 2006 Mar 07; 2(3):386-9. PubMed ID: 17193056
    [No Abstract] [Full Text] [Related]

  • 17. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
    Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J.
    Nano Lett; 2007 Apr 07; 7(4):921-6. PubMed ID: 17335270
    [Abstract] [Full Text] [Related]

  • 18. Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.
    Joyce HJ, Wong-Leung J, Gao Q, Tan HH, Jagadish C.
    Nano Lett; 2010 Mar 10; 10(3):908-15. PubMed ID: 20131909
    [Abstract] [Full Text] [Related]

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  • 20. Simultaneous integration of different nanowires on single textured Si (100) substrates.
    Rieger T, Rosenbach D, Mussler G, Schäpers T, Grützmacher D, Lepsa MI.
    Nano Lett; 2015 Mar 11; 15(3):1979-86. PubMed ID: 25650521
    [Abstract] [Full Text] [Related]

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