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Journal Abstract Search

394 related items for PubMed ID: 20940839

  • 1. Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers.
    Fedorova KA, Cataluna MA, Krestnikov I, Livshits D, Rafailov EU.
    Opt Express; 2010 Aug 30; 18(18):19438-43. PubMed ID: 20940839
    [Abstract] [Full Text] [Related]

  • 2. 574-647 nm wavelength tuning by second-harmonic generation from diode-pumped PPKTP waveguides.
    Fedorova KA, Sokolovskii GS, Battle PR, Livshits DA, Rafailov EU.
    Opt Lett; 2015 Mar 01; 40(5):835-8. PubMed ID: 25723445
    [Abstract] [Full Text] [Related]

  • 3. Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.
    Tanabe K, Nomura M, Guimard D, Iwamoto S, Arakawa Y.
    Opt Express; 2009 Apr 27; 17(9):7036-42. PubMed ID: 19399078
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  • 4. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
    Lee A, Jiang Q, Tang M, Seeds A, Liu H.
    Opt Express; 2012 Sep 24; 20(20):22181-7. PubMed ID: 23037366
    [Abstract] [Full Text] [Related]

  • 5. Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers.
    Li F, Mi Z.
    Opt Express; 2009 Oct 26; 17(22):19933-9. PubMed ID: 19997217
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  • 6. High-power quantum-dot tapered tunable external-cavity lasers based on chirped and unchirped structures.
    Haggett S, Krakowski M, Montrosset I, Cataluna MA.
    Opt Express; 2014 Sep 22; 22(19):22854-64. PubMed ID: 25321756
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  • 10. An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses.
    Lu ZG, Liu JR, Poole PJ, Raymond S, Barrios PJ, Poitras D, Pakulski G, Grant P, Roy-Guay D.
    Opt Express; 2009 Aug 03; 17(16):13609-14. PubMed ID: 19654768
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  • 11. High-brightness single photon source from a quantum dot in a directional-emission nanocavity.
    Toishi M, Englund D, Faraon A, Vucković J.
    Opt Express; 2009 Aug 17; 17(17):14618-26. PubMed ID: 19687940
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  • 14. 1.3 microm quantum dot laser in coupled-cavity-injection-grating design with bandwidth of 20 GHz under direct modulation.
    Gerschütz F, Fischer M, Koeth J, Krestnikov I, Kovsh A, Schilling C, Kaiser W, Höfling S, Forchel A.
    Opt Express; 2008 Apr 14; 16(8):5596-601. PubMed ID: 18542663
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  • 16. Passively mode-locked GaInNAs disk laser operating at 1220 nm.
    Rautiainen J, Korpijärvi VM, Puustinen J, Guina M, Okhotnikov O.
    Opt Express; 2008 Sep 29; 16(20):15964-9. PubMed ID: 18825234
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  • 17. InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.
    Jiang Q, Tang M, Chen S, Wu J, Seeds A, Liu H.
    Opt Express; 2014 Sep 22; 22(19):23242-8. PubMed ID: 25321793
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