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Journal Abstract Search

269 related items for PubMed ID: 21116548

  • 1. Morphological impact of zinc oxide layers on the device performance in thin-film transistors.
    Faber H, Klaumünzer M, Voigt M, Galli D, Vieweg BF, Peukert W, Spiecker E, Halik M.
    Nanoscale; 2011 Mar; 3(3):897-9. PubMed ID: 21116548
    [Abstract] [Full Text] [Related]

  • 2. Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell.
    Hirschmann J, Faber H, Halik M.
    Nanoscale; 2012 Jan 21; 4(2):444-7. PubMed ID: 22159764
    [Abstract] [Full Text] [Related]

  • 3. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
    Yoon A, Hong WK, Lee T.
    J Nanosci Nanotechnol; 2007 Nov 21; 7(11):4101-5. PubMed ID: 18047128
    [Abstract] [Full Text] [Related]

  • 4. Fabrication of poly-silicon nano-wire transistors on plastic substrates.
    Park C, Lee S, Choi M, Kang M, Jung Y, Hwang S, Ahn D, Lee J, Song C.
    J Nanosci Nanotechnol; 2007 Nov 21; 7(11):4150-3. PubMed ID: 18047139
    [Abstract] [Full Text] [Related]

  • 5. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.
    Chang YK, Hong FC.
    Nanotechnology; 2009 May 13; 20(19):195302. PubMed ID: 19420638
    [Abstract] [Full Text] [Related]

  • 6. Water-mediated Al metal transfer printing with contact inking for fabrication of thin-film transistors.
    Oh K, Lee BH, Hwang JK, Lee H, Im S, Sung MM.
    Small; 2009 Mar 13; 5(5):558-61. PubMed ID: 19199334
    [No Abstract] [Full Text] [Related]

  • 7. Negative differential resistance in carbon nanotube field-effect transistors with patterned gate oxide.
    Rinkiö M, Johansson A, Kotimäki V, Törmä P.
    ACS Nano; 2010 Jun 22; 4(6):3356-62. PubMed ID: 20524681
    [Abstract] [Full Text] [Related]

  • 8. Realization of a silicon nanowire vertical surround-gate field-effect transistor.
    Schmidt V, Riel H, Senz S, Karg S, Riess W, Gösele U.
    Small; 2006 Jan 22; 2(1):85-8. PubMed ID: 17193560
    [No Abstract] [Full Text] [Related]

  • 9. Making electrical nanocontacts to nanocrystal assemblies: mapping of room-temperature Coulomb-blockade thresholds in arrays of 28-kDa gold nanocrystals.
    O'Brien GA, Quinn AJ, Biancardo M, Preece JA, Bignozzi CA, Redmond G.
    Small; 2006 Feb 22; 2(2):261-6. PubMed ID: 17193033
    [No Abstract] [Full Text] [Related]

  • 10. Solution-processed zinc oxide field-effect transistors based on self-assembly of colloidal nanorods.
    Sun B, Sirringhaus H.
    Nano Lett; 2005 Dec 22; 5(12):2408-13. PubMed ID: 16351187
    [Abstract] [Full Text] [Related]

  • 11. High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis.
    Joung D, Chunder A, Zhai L, Khondaker SI.
    Nanotechnology; 2010 Apr 23; 21(16):165202. PubMed ID: 20348593
    [Abstract] [Full Text] [Related]

  • 12. Nanoparticle-coated n-ZnO/p-Si photodiodes with improved photoresponsivities and acceptance angles for potential solar cell applications.
    Chen CP, Lin PH, Chen LY, Ke MY, Cheng YW, Huang J.
    Nanotechnology; 2009 Jun 17; 20(24):245204. PubMed ID: 19468172
    [Abstract] [Full Text] [Related]

  • 13. Influences of pH and ligand type on the performance of inorganic aqueous precursor-derived ZnO thin film transistors.
    Jun T, Jung Y, Song K, Moon J.
    ACS Appl Mater Interfaces; 2011 Mar 17; 3(3):774-81. PubMed ID: 21366236
    [Abstract] [Full Text] [Related]

  • 14. Effect of the preparation procedure on the morphology of thin TiO₂ films and their device performance in small-molecule bilayer hybrid solar cells.
    Unger EL, Spadavecchia F, Nonomura K, Palmgren P, Cappelletti G, Hagfeldt A, Johansson EM, Boschloo G.
    ACS Appl Mater Interfaces; 2012 Nov 17; 4(11):5997-6004. PubMed ID: 23066994
    [Abstract] [Full Text] [Related]

  • 15. Room-temperature, texture-controlled growth of ZnO thin films and their application for growing aligned ZnO nanowire arrays.
    Hong JI, Bae J, Wang ZL, Snyder RL.
    Nanotechnology; 2009 Feb 25; 20(8):085609. PubMed ID: 19417457
    [Abstract] [Full Text] [Related]

  • 16. Effects of annealing conditions on the dielectric properties of solution-processed Al2O3 layers for indium-zinc-tin-oxide thin-film transistors.
    Kim YH, Kim KH, Park SK.
    J Nanosci Nanotechnol; 2013 Nov 25; 13(11):7779-82. PubMed ID: 24245333
    [Abstract] [Full Text] [Related]

  • 17. Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry.
    Kim S, Kim S, Park J, Ju S, Mohammadi S.
    ACS Nano; 2010 Jun 22; 4(6):2994-8. PubMed ID: 20450163
    [Abstract] [Full Text] [Related]

  • 18. The effect of excimer laser annealing on ZnO nanowires and their field effect transistors.
    Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee T.
    Nanotechnology; 2009 Mar 04; 20(9):095203. PubMed ID: 19417481
    [Abstract] [Full Text] [Related]

  • 19. Whispering gallery mode lasing from zinc oxide hexagonal nanodisks.
    Gargas DJ, Moore MC, Ni A, Chang SW, Zhang Z, Chuang SL, Yang P.
    ACS Nano; 2010 Jun 22; 4(6):3270-6. PubMed ID: 20415461
    [Abstract] [Full Text] [Related]

  • 20. A novel method for fabricating sub-16 nm footprint T-gate nanoimprint molds.
    Peng C, Liang X, Chou SY.
    Nanotechnology; 2009 May 06; 20(18):185302. PubMed ID: 19420609
    [Abstract] [Full Text] [Related]

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