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Journal Abstract Search

355 related items for PubMed ID: 21483977

  • 1. Growth of silver nanowires on GaAs wafers.
    Sun Y.
    Nanoscale; 2011 May; 3(5):2247-55. PubMed ID: 21483977
    [Abstract] [Full Text] [Related]

  • 2. Surfactantless synthesis of silver nanoplates and their application in SERS.
    Sun Y, Wiederrecht GP.
    Small; 2007 Nov; 3(11):1964-75. PubMed ID: 17935082
    [Abstract] [Full Text] [Related]

  • 3. P-doping mechanisms in catalyst-free gallium arsenide nanowires.
    Dufouleur J, Colombo C, Garma T, Ketterer B, Uccelli E, Nicotra M, Fontcuberta i Morral A.
    Nano Lett; 2010 May 12; 10(5):1734-40. PubMed ID: 20373777
    [Abstract] [Full Text] [Related]

  • 4. Self-healing of fractured GaAs nanowires.
    Wang Y, Joyce HJ, Gao Q, Liao X, Tan HH, Zou J, Ringer SP, Shan Z, Jagadish C.
    Nano Lett; 2011 Apr 13; 11(4):1546-9. PubMed ID: 21417399
    [Abstract] [Full Text] [Related]

  • 5. Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111).
    Krogstrup P, Popovitz-Biro R, Johnson E, Madsen MH, Nygård J, Shtrikman H.
    Nano Lett; 2010 Nov 10; 10(11):4475-82. PubMed ID: 20932012
    [Abstract] [Full Text] [Related]

  • 6. Tailoring the vapor-liquid-solid growth toward the self-assembly of GaAs nanowire junctions.
    Dai X, Dayeh SA, Veeramuthu V, Larrue A, Wang J, Su H, Soci C.
    Nano Lett; 2011 Nov 09; 11(11):4947-52. PubMed ID: 21967168
    [Abstract] [Full Text] [Related]

  • 7. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
    Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y.
    Small; 2006 Mar 09; 2(3):386-9. PubMed ID: 17193056
    [No Abstract] [Full Text] [Related]

  • 8. GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions.
    Sadowski J, Dłuzewski P, Kret S, Janik E, Lusakowska E, Kanski J, Presz A, Terki F, Charar S, Tang D.
    Nano Lett; 2007 Sep 09; 7(9):2724-8. PubMed ID: 17718585
    [Abstract] [Full Text] [Related]

  • 9. GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy.
    Ouattara L, Mikkelsen A, Sköld N, Eriksson J, Knaapen T, Cavar E, Seifert W, Samuelson L, Lundgren E.
    Nano Lett; 2007 Sep 09; 7(9):2859-64. PubMed ID: 17722945
    [Abstract] [Full Text] [Related]

  • 10. Effect of carbon tetrabromide on the morphology of GaAs nanowires.
    Salehzadeh O, Watkins SP.
    Nanotechnology; 2011 Apr 22; 22(16):165603. PubMed ID: 21393824
    [Abstract] [Full Text] [Related]

  • 11. Self-directed growth of AlGaAs core-shell nanowires for visible light applications.
    Chen C, Shehata S, Fradin C, LaPierre R, Couteau C, Weihs G.
    Nano Lett; 2007 Sep 22; 7(9):2584-9. PubMed ID: 17696557
    [Abstract] [Full Text] [Related]

  • 12. Single GaAs/GaAsP coaxial core-shell nanowire lasers.
    Hua B, Motohisa J, Kobayashi Y, Hara S, Fukui T.
    Nano Lett; 2009 Jan 22; 9(1):112-6. PubMed ID: 19072060
    [Abstract] [Full Text] [Related]

  • 13. A binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topology.
    Zhao HQ, Kasai S, Shiratori Y, Hashizume T.
    Nanotechnology; 2009 Jun 17; 20(24):245203. PubMed ID: 19468164
    [Abstract] [Full Text] [Related]

  • 14. Multiple quantum well AlGaAs nanowires.
    Chen C, Braidy N, Couteau C, Fradin C, Weihs G, LaPierre R.
    Nano Lett; 2008 Feb 17; 8(2):495-9. PubMed ID: 18184023
    [Abstract] [Full Text] [Related]

  • 15. High-aspect-ratio nanogap electrodes for averaging molecular conductance measurements.
    Luber SM, Zhang F, Lingitz S, Hansen AG, Scheliga F, Thorn-Csányi E, Bichler M, Tornow M.
    Small; 2007 Feb 17; 3(2):285-9. PubMed ID: 17262757
    [No Abstract] [Full Text] [Related]

  • 16. Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask.
    Hsu CW, Chen YF, Su YK.
    Nanotechnology; 2012 Dec 14; 23(49):495306. PubMed ID: 23154824
    [Abstract] [Full Text] [Related]

  • 17. The preparation of silver nanoparticle decorated silica nanowires on fused quartz as reusable versatile nanostructured surface-enhanced Raman scattering substrates.
    Hwang JS, Chen KY, Hong SJ, Chen SW, Syu WS, Kuo CW, Syu WY, Lin TY, Chiang HP, Chattopadhyay S, Chen KH, Chen LC.
    Nanotechnology; 2010 Jan 15; 21(2):025502. PubMed ID: 19955621
    [Abstract] [Full Text] [Related]

  • 18. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.
    Munshi AM, Dheeraj DL, Fauske VT, Kim DC, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2012 Sep 12; 12(9):4570-6. PubMed ID: 22889019
    [Abstract] [Full Text] [Related]

  • 19. Alignment of semiconductor nanowires using ion beams.
    Borschel C, Niepelt R, Geburt S, Gutsche C, Regolin I, Prost W, Tegude FJ, Stichtenoth D, Schwen D, Ronning C.
    Small; 2009 Nov 12; 5(22):2576-80. PubMed ID: 19714732
    [Abstract] [Full Text] [Related]

  • 20. Anisotropic interface induced formation of Sb nanowires on GaSb(111)A substrates.
    Proessdorf A, Grosse F, Perumal K, Braun W, Riechert H.
    Nanotechnology; 2012 Jun 15; 23(23):235301. PubMed ID: 22595679
    [Abstract] [Full Text] [Related]

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