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182 related items for PubMed ID: 21545165
1. Strong enhancement of solar cell efficiency due to quantum dots with built-in charge. Sablon KA, Little JW, Mitin V, Sergeev A, Vagidov N, Reinhardt K. Nano Lett; 2011 Jun 08; 11(6):2311-7. PubMed ID: 21545165 [Abstract] [Full Text] [Related]
2. High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability. Cao Y, Ji H, Xu P, Gu Y, Ma W, Yang T. Opt Lett; 2012 Oct 01; 37(19):4071-3. PubMed ID: 23027282 [Abstract] [Full Text] [Related]
5. Enhanced spontaneous emission from InAs/GaAs quantum dots in pillar microcavities emitting at telecom wavelengths. Chauvin N, Balet L, Alloing B, Zinoni C, Li L, Fiore A, Grenouillet L, Gilet P, Olivier N, Tchelnokov A, Terrier M, Gérard JM. Opt Lett; 2007 Sep 15; 32(18):2747-9. PubMed ID: 17873956 [Abstract] [Full Text] [Related]
6. Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field. Moskalenko ES, Larsson M, Karlsson KF, Holtz PO, Monemar B, Schoenfeld WV, Petroff PM. Nano Lett; 2007 Jan 15; 7(1):188-93. PubMed ID: 17212462 [Abstract] [Full Text] [Related]
8. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber. Tsukamoto S, Honma T, Bell GR, Ishii A, Arakawa Y. Small; 2006 Mar 15; 2(3):386-9. PubMed ID: 17193056 [No Abstract] [Full Text] [Related]
9. Strong extinction of a far-field laser beam by a single quantum dot. Vamivakas AN, Atatüre M, Dreiser J, Yilmaz ST, Badolato A, Swan AK, Goldberg BB, Imamoglu A, Unlü MS. Nano Lett; 2007 Sep 15; 7(9):2892-6. PubMed ID: 17691853 [Abstract] [Full Text] [Related]
10. The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures. Seravalli L, Trevisi G, Frigeri P, Franchi S, Geddo M, Guizzetti G. Nanotechnology; 2009 Jul 08; 20(27):275703. PubMed ID: 19531853 [Abstract] [Full Text] [Related]
11. Morphology and composition of InAs/GaAs quantum dots. Heun S, Biasiol G, Grillo V, Carlino E, Sorba L, Golinelli GB, Locatelli A, Mentes TO, Guo FZ. J Nanosci Nanotechnol; 2007 Jun 08; 7(6):1721-5. PubMed ID: 17654929 [Abstract] [Full Text] [Related]
16. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer. Tanabe K, Guimard D, Bordel D, Iwamoto S, Arakawa Y. Opt Express; 2010 May 10; 18(10):10604-8. PubMed ID: 20588912 [Abstract] [Full Text] [Related]
17. An energy-harvesting scheme employing CuGaSe2 quantum dot-modified ZnO buffer layers for drastic conversion efficiency enhancement in inorganic-organic hybrid solar cells. Ho CR, Tsai ML, Jhuo HJ, Lien DH, Lin CA, Tsai SH, Wei TC, Huang KP, Chen SA, He JH. Nanoscale; 2013 Jul 21; 5(14):6350-5. PubMed ID: 23455444 [Abstract] [Full Text] [Related]
18. Effects of a longitudinal magnetic field on spin injection and detection in InAs/GaAs quantum dot structures. Beyer J, Wang PH, Buyanova IA, Suraprapapich S, Tu CW, Chen WM. J Phys Condens Matter; 2012 Apr 11; 24(14):145304. PubMed ID: 22417853 [Abstract] [Full Text] [Related]
19. Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate. Tanabe K, Nomura M, Guimard D, Iwamoto S, Arakawa Y. Opt Express; 2009 Apr 27; 17(9):7036-42. PubMed ID: 19399078 [Abstract] [Full Text] [Related]
20. Direct observation of polarons in electron populated quantum dots by resonant Raman scattering. Aslan B, Liu HC, Korkusinski M, Hawrylak P, Lockwood DJ. J Nanosci Nanotechnol; 2008 Feb 27; 8(2):789-94. PubMed ID: 18464407 [Abstract] [Full Text] [Related] Page: [Next] [New Search]