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Journal Abstract Search

454 related items for PubMed ID: 21572216

  • 1. Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.
    Li Y, Long S, Lv H, Liu Q, Wang Y, Zhang S, Lian W, Wang M, Zhang K, Xie H, Liu S, Liu M.
    Nanotechnology; 2011 Jun 24; 22(25):254028. PubMed ID: 21572216
    [Abstract] [Full Text] [Related]

  • 2. Controllable oxygen vacancies to enhance resistive switching performance in a ZrO2-based RRAM with embedded Mo layer.
    Wang SY, Lee DY, Huang TY, Wu JW, Tseng TY.
    Nanotechnology; 2010 Dec 10; 21(49):495201. PubMed ID: 21071817
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  • 5. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications.
    Wang Y, Liu Q, Long S, Wang W, Wang Q, Zhang M, Zhang S, Li Y, Zuo Q, Yang J, Liu M.
    Nanotechnology; 2010 Jan 29; 21(4):045202. PubMed ID: 20009169
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  • 7. Resistive switching behavior and multiple transmittance states in solution-processed tungsten oxide.
    Wu WT, Wu JJ, Chen JS.
    ACS Appl Mater Interfaces; 2011 Jul 29; 3(7):2616-21. PubMed ID: 21702504
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  • 9. Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO2/ZrO2/Pt.
    Sun Z, Wang P, Li X, Chen L, Yang Y, Wang C.
    Materials (Basel); 2024 Apr 17; 17(8):. PubMed ID: 38673209
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  • 11. Impacts of Cu-Doping on the Performance of La-Based RRAM Devices.
    Wang Y, Liu H, Wang X, Zhao L.
    Nanoscale Res Lett; 2019 Jul 09; 14(1):224. PubMed ID: 31289960
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  • 14. Resistive switching memory devices composed of binary transition metal oxides using sol-gel chemistry.
    Lee C, Kim I, Choi W, Shin H, Cho J.
    Langmuir; 2009 Apr 21; 25(8):4274-8. PubMed ID: 19317425
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  • 16. Electrode-induced digital-to-analog resistive switching in TaO x -based RRAM devices.
    Li X, Wu H, Bin Gao, Wu W, Wu D, Deng N, Cai J, Qian H.
    Nanotechnology; 2016 Jul 29; 27(30):305201. PubMed ID: 27302281
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  • 17. Formation and rupture of Ag conductive bridge in ZrO2-based resistive switching memory.
    Lin CC, Chang YP.
    J Nanosci Nanotechnol; 2012 Mar 29; 12(3):2437-41. PubMed ID: 22755070
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  • 19. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory.
    Zhao X, Song P, Gai H, Li Y, Ai C, Wen D.
    Micromachines (Basel); 2020 Sep 24; 11(10):. PubMed ID: 32987957
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