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Journal Abstract Search

400 related items for PubMed ID: 21702504

  • 1. Resistive switching behavior and multiple transmittance states in solution-processed tungsten oxide.
    Wu WT, Wu JJ, Chen JS.
    ACS Appl Mater Interfaces; 2011 Jul; 3(7):2616-21. PubMed ID: 21702504
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  • 3. Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour.
    Sun B, Guo T, Zhou G, Ranjan S, Hou W, Hou Y, Zhao Y.
    J Colloid Interface Sci; 2019 Oct 01; 553():682-687. PubMed ID: 31252184
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  • 7. Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories.
    Chen KH, Cheng CM, Chen ML, Pan YY.
    Nanomaterials (Basel); 2023 Feb 10; 13(4):. PubMed ID: 36839057
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  • 10. Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory.
    Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Chen MC, Su YT, Lin CY, Tseng YT, Huang HC, Wu H, Deng N, Qian H, Sze SM.
    ACS Appl Mater Interfaces; 2017 Jan 25; 9(3):3149-3155. PubMed ID: 28072511
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  • 13. Development of a high-performance anode for lithium ion batteries using novel ordered mesoporous tungsten oxide materials with high electrical conductivity.
    Yoon S, Jo C, Noh SY, Lee CW, Song JH, Lee J.
    Phys Chem Chem Phys; 2011 Jun 21; 13(23):11060-6. PubMed ID: 21552641
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  • 18. The anodized crystalline WO3 nanoporous network with enhanced electrochromic properties.
    Ou JZ, Balendhran S, Field MR, McCulloch DG, Zoolfakar AS, Rani RA, Zhuiykov S, O'Mullane AP, Kalantar-Zadeh K.
    Nanoscale; 2012 Sep 28; 4(19):5980-8. PubMed ID: 22906993
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