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Journal Abstract Search

400 related items for PubMed ID: 21702504

  • 21. Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.
    Qian K, Cai G, Nguyen VC, Chen T, Lee PS.
    ACS Appl Mater Interfaces; 2016 Oct 19; 8(41):27885-27891. PubMed ID: 27704752
    [Abstract] [Full Text] [Related]

  • 22. Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches.
    Li M, Zhuge F, Zhu X, Yin K, Wang J, Liu Y, He C, Chen B, Li RW.
    Nanotechnology; 2010 Oct 22; 21(42):425202. PubMed ID: 20858929
    [Abstract] [Full Text] [Related]

  • 23. MgO nano-facet embedded silver-based dielectric/metal/dielectric transparent electrode.
    Kim S, Yu HK, Hong K, Kim K, Son JH, Lee I, Kim KB, Kim TY, Lee JL.
    Opt Express; 2012 Jan 16; 20(2):845-53. PubMed ID: 22274430
    [Abstract] [Full Text] [Related]

  • 24. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITOX:SiO2 Thin Films on Resistive Random Access Memory Devices.
    Chen KH, Cheng CM, Wang NF, Kao MC.
    Nanomaterials (Basel); 2023 Jul 26; 13(15):. PubMed ID: 37570498
    [Abstract] [Full Text] [Related]

  • 25. Fast-switching photovoltachromic cells with tunable transmittance.
    Wu JJ, Hsieh MD, Liao WP, Wu WT, Chen JS.
    ACS Nano; 2009 Aug 25; 3(8):2297-303. PubMed ID: 19645461
    [Abstract] [Full Text] [Related]

  • 26. All solution-processed, fully transparent resistive memory devices.
    Kim A, Song K, Kim Y, Moon J.
    ACS Appl Mater Interfaces; 2011 Nov 25; 3(11):4525-30. PubMed ID: 22010837
    [Abstract] [Full Text] [Related]

  • 27. Low-Temperature and Solution-Processed Amorphous WO(x) as Electron-Selective Layer for Perovskite Solar Cells.
    Wang K, Shi Y, Dong Q, Li Y, Wang S, Yu X, Wu M, Ma T.
    J Phys Chem Lett; 2015 Mar 05; 6(5):755-9. PubMed ID: 26262648
    [Abstract] [Full Text] [Related]

  • 28. Electrical and Physical Characteristics of WO₃/Ag/WO₃ Sandwich Structure Fabricated with Magnetic-Control Sputtering Metrology †.
    Wang SJ, Wang MC, Chen SF, Li YH, Shen TS, Bor HY, Wei CN.
    Sensors (Basel); 2018 Aug 25; 18(9):. PubMed ID: 30149633
    [Abstract] [Full Text] [Related]

  • 29. Does mesoporosity enhance thin film properties? A question of electrode material for electrochromism of WO3.
    Ostermann R, Smarsly B.
    Nanoscale; 2009 Nov 25; 1(2):266-70. PubMed ID: 20644848
    [Abstract] [Full Text] [Related]

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  • 31. The Effect of Transparent Conducting Oxide Films on WO3-Based Electrochromic Devices with Conducting Polymer Electrolytes.
    Au BW, Chan KY, Thien GSH, Yeoh ME, Sahdan MZ, Murthy HCA.
    Polymers (Basel); 2023 Jan 03; 15(1):. PubMed ID: 36616586
    [Abstract] [Full Text] [Related]

  • 32. Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.
    Chen KH, Chang KC, Chang TC, Tsai TM, Liang SP, Young TF, Syu YE, Sze SM.
    Nanoscale Res Lett; 2016 Dec 03; 11(1):52. PubMed ID: 26831690
    [Abstract] [Full Text] [Related]

  • 33. Enhanced photoelectrocatalytic performance of Zn-doped WO(3) photocatalysts for nitrite ions degradation under visible light.
    Cheng XF, Leng WH, Liu DP, Zhang JQ, Cao CN.
    Chemosphere; 2007 Aug 03; 68(10):1976-84. PubMed ID: 17482660
    [Abstract] [Full Text] [Related]

  • 34. Outperformed electrochromic behavior of poly(ethylene glycol)-template nanostructured tungsten oxide films with enhanced charge transfer/transport characteristics.
    Wu WT, Liao WP, Chen LY, Chen JS, Wu JJ.
    Phys Chem Chem Phys; 2009 Nov 14; 11(42):9751-8. PubMed ID: 19851553
    [Abstract] [Full Text] [Related]

  • 35. Color purity in polymer electrochromic window devices on indium-tin oxide and single-walled carbon nanotube electrodes.
    Vasilyeva SV, Unur E, Walczak RM, Donoghue EP, Rinzler AG, Reynolds JR.
    ACS Appl Mater Interfaces; 2009 Oct 14; 1(10):2288-97. PubMed ID: 20355864
    [Abstract] [Full Text] [Related]

  • 36. Point contact resistive switching memory based on self-formed interface of Al/ITO.
    Li Q, Qiu L, Wei X, Dai B, Zeng H.
    Sci Rep; 2016 Jul 07; 6():29347. PubMed ID: 27383005
    [Abstract] [Full Text] [Related]

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  • 38. Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments.
    Chen KH, Tsai TM, Cheng CM, Huang SJ, Chang KC, Liang SP, Young TF.
    Materials (Basel); 2017 Dec 28; 11(1):. PubMed ID: 29283368
    [Abstract] [Full Text] [Related]

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  • 40. High optical switching speed and flexible electrochromic display based on WO3 nanoparticles with ZnO nanorod arrays' supported electrode.
    Wang M, Fang G, Yuan L, Huang H, Sun Z, Liu N, Xia S, Zhao X.
    Nanotechnology; 2009 May 06; 20(18):185304. PubMed ID: 19420611
    [Abstract] [Full Text] [Related]

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