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Journal Abstract Search

515 related items for PubMed ID: 21727532

  • 1. Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy.
    Tchernycheva M, Harmand JC, Patriarche G, Travers L, Cirlin GE.
    Nanotechnology; 2006 Aug 28; 17(16):4025-30. PubMed ID: 21727532
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  • 2. Mechanism of self-assembled growth of ordered GaAs nanowire arrays by metalorganic vapor phase epitaxy on GaAs vicinal substrates.
    Mohan P, Bag R, Singh S, Kumar A, Tyagi R.
    Nanotechnology; 2012 Jan 20; 23(2):025601. PubMed ID: 22166369
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  • 5. Influence of substrate orientation on the structural quality of GaAs nanowires in molecular beam epitaxy.
    Zhang Z, Shi SX, Chen PP, Lu W, Zou J.
    Nanotechnology; 2015 Jan 26; 26(25):255601. PubMed ID: 26024290
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  • 7. Epitaxial Fe3Si films on GaAs(100) substrates by means of electron beam evaporation.
    Thomas J, Schumann J, Vinzelberg H, Arushanov E, Engelhard R, Schmidt OG, Gemming T.
    Nanotechnology; 2009 Jun 10; 20(23):235604. PubMed ID: 19451681
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  • 10. Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.
    Plissard S, Dick KA, Larrieu G, Godey S, Addad A, Wallart X, Caroff P.
    Nanotechnology; 2010 Sep 24; 21(38):385602. PubMed ID: 20798467
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  • 11. Growth characteristics of GaAs nanowires obtained by selective area metal-organic vapour-phase epitaxy.
    Ikejiri K, Sato T, Yoshida H, Hiruma K, Motohisa J, Hara S, Fukui T.
    Nanotechnology; 2008 Jul 02; 19(26):265604. PubMed ID: 21828685
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  • 12. Detailed modeling of the epitaxial growth of GaAs nanowires.
    De Jong E, LaPierre RR, Wen JZ.
    Nanotechnology; 2010 Jan 29; 21(4):045602. PubMed ID: 20009168
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  • 18. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs(1-x)Bi(x) films.
    Wood AW, Collar K, Li J, Brown AS, Babcock SE.
    Nanotechnology; 2016 Mar 18; 27(11):115704. PubMed ID: 26876494
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