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543 related items for PubMed ID: 21795769

  • 1. Submicrometre resolved optical characterization of green nanowire-based light emitting diodes.
    Bavencove AL, Tourbot G, Garcia J, Désières Y, Gilet P, Levy F, André B, Gayral B, Daudin B, Dang le S.
    Nanotechnology; 2011 Aug 26; 22(34):345705. PubMed ID: 21795769
    [Abstract] [Full Text] [Related]

  • 2. Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices.
    Sarwar AT, Carnevale SD, Yang F, Kent TF, Jamison JJ, McComb DW, Myers RC.
    Small; 2015 Oct 28; 11(40):5402-8. PubMed ID: 26307552
    [Abstract] [Full Text] [Related]

  • 3. Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.
    Lu T, Li S, Zhang K, Liu C, Yin Y, Wu L, Wang H, Yang X, Xiao G, Zhou Y.
    Opt Express; 2011 Sep 12; 19(19):18319-23. PubMed ID: 21935200
    [Abstract] [Full Text] [Related]

  • 4. Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon.
    Nguyen HP, Djavid M, Cui K, Mi Z.
    Nanotechnology; 2012 May 17; 23(19):194012. PubMed ID: 22539212
    [Abstract] [Full Text] [Related]

  • 5. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
    Chang HM, Lai WC, Chen WS, Chang SJ.
    Opt Express; 2015 Apr 06; 23(7):A337-45. PubMed ID: 25968799
    [Abstract] [Full Text] [Related]

  • 6. Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy.
    Armitage R, Tsubaki K.
    Nanotechnology; 2010 May 14; 21(19):195202. PubMed ID: 20400823
    [Abstract] [Full Text] [Related]

  • 7. Characteristics of dielectrophoretically aligned UV-blue GaN nanowire LEDs.
    Kim TH, Lee SY, Kim HG, Kim SH, Hong CH, Hahn YB, Lee SK.
    J Nanosci Nanotechnol; 2008 Jan 14; 8(1):268-73. PubMed ID: 18468070
    [Abstract] [Full Text] [Related]

  • 8. Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment.
    Zhang H, Jacopin G, Neplokh V, Largeau L, Julien FH, Kryliouk O, Tchernycheva M.
    Nanotechnology; 2015 Nov 20; 26(46):465203. PubMed ID: 26508299
    [Abstract] [Full Text] [Related]

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  • 10. Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue active layers and n-type AlGaN layer.
    Yan QR, Zhang Y, Li ST, Yan QA, Shi PP, Niu QL, He M, Li GP, Li JR.
    Opt Lett; 2012 May 01; 37(9):1556-8. PubMed ID: 22555736
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  • 13. Current path in light emitting diodes based on nanowire ensembles.
    Limbach F, Hauswald C, Lähnemann J, Wölz M, Brandt O, Trampert A, Hanke M, Jahn U, Calarco R, Geelhaar L, Riechert H.
    Nanotechnology; 2012 Nov 23; 23(46):465301. PubMed ID: 23092897
    [Abstract] [Full Text] [Related]

  • 14. Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays.
    Huang YY, Chen LY, Chang CH, Sun YH, Cheng YW, Ke MY, Lu YH, Kuo HC, Huang J.
    Nanotechnology; 2011 Jan 28; 22(4):045202. PubMed ID: 21157011
    [Abstract] [Full Text] [Related]

  • 15. Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer.
    Lu TC, Ke MY, Yang SC, Cheng YW, Chen LY, Lin GJ, Lu YH, He JH, Kuo HC, Huang J.
    Opt Lett; 2010 Dec 15; 35(24):4109-11. PubMed ID: 21165106
    [Abstract] [Full Text] [Related]

  • 16. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers.
    Qian F, Li Y, Gradecak S, Park HG, Dong Y, Ding Y, Wang ZL, Lieber CM.
    Nat Mater; 2008 Sep 15; 7(9):701-6. PubMed ID: 18711385
    [Abstract] [Full Text] [Related]

  • 17. Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.
    Zhao P, Zhao H.
    Opt Express; 2012 Sep 10; 20 Suppl 5():A765-76. PubMed ID: 23037543
    [Abstract] [Full Text] [Related]

  • 18. Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes.
    Yu CT, Lai WC, Yen CH, Chang SJ.
    Opt Express; 2014 May 05; 22 Suppl 3():A663-70. PubMed ID: 24922374
    [Abstract] [Full Text] [Related]

  • 19. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.
    Lee KJ, Chun J, Kim SJ, Oh S, Ha CS, Park JW, Lee SJ, Song JC, Baek JH, Park SJ.
    Opt Express; 2016 Mar 07; 24(5):4391-4398. PubMed ID: 29092267
    [Abstract] [Full Text] [Related]

  • 20. Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs.
    Soh CB, Wang B, Chua SJ, Lin VK, Tan RJ, Tripathy S.
    Nanotechnology; 2008 Oct 08; 19(40):405303. PubMed ID: 21832613
    [Abstract] [Full Text] [Related]

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