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296 related items for PubMed ID: 21828712

  • 1. Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.
    Dheeraj DL, Patriarche G, Largeau L, Zhou HL, van Helvoort AT, Glas F, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2008 Jul 09; 19(27):275605. PubMed ID: 21828712
    [Abstract] [Full Text] [Related]

  • 2. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.
    Dheeraj DL, Munshi AM, Scheffler M, van Helvoort AT, Weman H, Fimland BO.
    Nanotechnology; 2013 Jan 11; 24(1):015601. PubMed ID: 23220972
    [Abstract] [Full Text] [Related]

  • 3. Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts.
    Dheeraj DL, Patriarche G, Zhou H, Hoang TB, Moses AF, Grønsberg S, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2008 Dec 11; 8(12):4459-63. PubMed ID: 19367852
    [Abstract] [Full Text] [Related]

  • 4. Self-catalyzed MBE grown GaAs/GaAs(x)Sb(1-x) core-shell nanowires in ZB and WZ crystal structures.
    Ghalamestani SG, Munshi AM, Dheeraj DL, Fimland BO, Weman H, Dick KA.
    Nanotechnology; 2013 Oct 11; 24(40):405601. PubMed ID: 24028926
    [Abstract] [Full Text] [Related]

  • 5. Stages in molecular beam epitaxy growth of GaAs nanowires studied by x-ray diffraction.
    Mariager SO, Lauridsen SL, Sørensen CB, Dohn A, Willmott PR, Nygård J, Feidenhans'l R.
    Nanotechnology; 2010 Mar 19; 21(11):115603. PubMed ID: 20173223
    [Abstract] [Full Text] [Related]

  • 6. Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking.
    Arbiol J, Estradé S, Prades JD, Cirera A, Furtmayr F, Stark C, Laufer A, Stutzmann M, Eickhoff M, Gass MH, Bleloch AL, Peiró F, Morante JR.
    Nanotechnology; 2009 Apr 08; 20(14):145704. PubMed ID: 19420534
    [Abstract] [Full Text] [Related]

  • 7. Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111).
    Biermanns A, Breuer S, Trampert A, Davydok A, Geelhaar L, Pietsch U.
    Nanotechnology; 2012 Aug 03; 23(30):305703. PubMed ID: 22751267
    [Abstract] [Full Text] [Related]

  • 8. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy.
    Yu X, Li L, Wang H, Xiao J, Shen C, Pan D, Zhao J.
    Nanoscale; 2016 May 19; 8(20):10615-21. PubMed ID: 27194599
    [Abstract] [Full Text] [Related]

  • 9. Engineering parallel and perpendicular polarized photoluminescence from a single semiconductor nanowire by crystal phase control.
    Ba Hoang T, Moses AF, Ahtapodov L, Zhou H, Dheeraj DL, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2010 Aug 11; 10(8):2927-33. PubMed ID: 20604543
    [Abstract] [Full Text] [Related]

  • 10. Molecular beam epitaxial growth of GaAsSb/GaAsSbN/GaAlAs core-multishell nanowires for near-infrared applications.
    Deshmukh P, Li J, Nalamati S, Sharma M, Iyer S.
    Nanotechnology; 2019 Jul 05; 30(27):275203. PubMed ID: 30865932
    [Abstract] [Full Text] [Related]

  • 11. Zn(1-x)Mg(x)Te nanowires grown by solid source molecular beam epitaxy.
    Janik E, Dynowska E, Dłużewski P, Kret S, Presz A, Zaleszczyk W, Szuszkiewicz W, Morhange JF, Petroutchik A, Maćkowski S, Wojtowicz T.
    Nanotechnology; 2008 Sep 10; 19(36):365606. PubMed ID: 21828877
    [Abstract] [Full Text] [Related]

  • 12. Photoluminescence properties of InAs nanowires grown on GaAs and Si substrates.
    Sun MH, Leong ES, Chin AH, Ning CZ, Cirlin GE, Samsonenko YB, Dubrovskii VG, Chuang L, Chang-Hasnain C.
    Nanotechnology; 2010 Aug 20; 21(33):335705. PubMed ID: 20657047
    [Abstract] [Full Text] [Related]

  • 13. Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions.
    Fakhr A, Haddara YM, Lapierre RR.
    Nanotechnology; 2010 Apr 23; 21(16):165601. PubMed ID: 20348594
    [Abstract] [Full Text] [Related]

  • 14. Sb-Mediated Tuning of Growth- and Exciton Dynamics in Entirely Catalyst-Free GaAsSb Nanowires.
    Jeong HW, Ajay A, Yu H, Döblinger M, Mukhundhan N, Finley JJ, Koblmüller G.
    Small; 2023 Apr 23; 19(16):e2207531. PubMed ID: 36670090
    [Abstract] [Full Text] [Related]

  • 15. Correlated micro-photoluminescence and electron microscopy studies of the same individual heterostructured semiconductor nanowires.
    Todorovic J, Moses AF, Karlberg T, Olk P, Dheeraj DL, Fimland BO, Weman H, van Helvoort AT.
    Nanotechnology; 2011 Aug 12; 22(32):325707. PubMed ID: 21775779
    [Abstract] [Full Text] [Related]

  • 16. Crystal phase engineering of self-catalyzed GaAs nanowires using a RHEED diagram.
    Dursap T, Vettori M, Danescu A, Botella C, Regreny P, Patriarche G, Gendry M, Penuelas J.
    Nanoscale Adv; 2020 May 19; 2(5):2127-2134. PubMed ID: 36132505
    [Abstract] [Full Text] [Related]

  • 17. Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy.
    Davydok A, Breuer S, Biermanns A, Geelhaar L, Pietsch U.
    Nanoscale Res Lett; 2012 Feb 08; 7(1):109. PubMed ID: 22315928
    [Abstract] [Full Text] [Related]

  • 18. Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy.
    Zhuang QD, Anyebe EA, Chen R, Liu H, Sanchez AM, Rajpalke MK, Veal TD, Wang ZM, Huang YZ, Sun HD.
    Nano Lett; 2015 Feb 11; 15(2):1109-16. PubMed ID: 25559370
    [Abstract] [Full Text] [Related]

  • 19. Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.
    Plissard S, Dick KA, Larrieu G, Godey S, Addad A, Wallart X, Caroff P.
    Nanotechnology; 2010 Sep 24; 21(38):385602. PubMed ID: 20798467
    [Abstract] [Full Text] [Related]

  • 20. Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure.
    Ben Sedrine N, Ribeiro-Andrade R, Gustafsson A, Soares MR, Bourgard J, Teixeira JP, Salomé PMP, Correia MR, Moreira MVB, De Oliveira AG, González JC, Leitão JP.
    Nanoscale; 2018 Feb 22; 10(8):3697-3708. PubMed ID: 29388656
    [Abstract] [Full Text] [Related]

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