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Journal Abstract Search

183 related items for PubMed ID: 21848334

  • 21. High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al₂O₃ Gate Dielectric.
    Choi S, Kim KT, Park SK, Kim YH.
    Materials (Basel); 2019 Mar 13; 12(6):. PubMed ID: 30871272
    [Abstract] [Full Text] [Related]

  • 22. A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors.
    Ma X, Zhang J, Cai W, Wang H, Wilson J, Wang Q, Xin Q, Song A.
    Sci Rep; 2017 Apr 11; 7(1):809. PubMed ID: 28400576
    [Abstract] [Full Text] [Related]

  • 23. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
    Liu A, Liu GX, Zhu HH, Xu F, Fortunato E, Martins R, Shan FK.
    ACS Appl Mater Interfaces; 2014 Oct 22; 6(20):17364-9. PubMed ID: 25285983
    [Abstract] [Full Text] [Related]

  • 24. Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.
    Xiao X, Zhang L, Shao Y, Zhou X, He H, Zhang S.
    ACS Appl Mater Interfaces; 2018 Aug 08; 10(31):25850-25857. PubMed ID: 29235839
    [Abstract] [Full Text] [Related]

  • 25. Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric.
    Liu Y, Liu C, Qin H, Peng C, Lu M, Chen Z, Zhao Y.
    Membranes (Basel); 2021 Nov 22; 11(11):. PubMed ID: 34832130
    [Abstract] [Full Text] [Related]

  • 26. Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.
    Jeong Y, Pearson C, Kim HG, Park MY, Kim H, Do LM, Petty MC.
    ACS Appl Mater Interfaces; 2016 Jan 27; 8(3):2061-70. PubMed ID: 26704352
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  • 30. Ultralow-Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations.
    Jiang S, He G, Wang W, Zhu M, Chen Z, Gao Q, Liu Y.
    Nanomaterials (Basel); 2022 Sep 19; 12(18):. PubMed ID: 36145031
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  • 33. Stable Logic Operation of Fiber-Based Single-Walled Carbon Nanotube Transistor Circuits Toward Thread-Like CMOS Circuitry.
    Heo JS, Kim KT, Ban SG, Kim YJ, Kim D, Kim T, Hong Y, Kim IS, Park SK.
    Materials (Basel); 2018 Oct 01; 11(10):. PubMed ID: 30275425
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  • 35. Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors.
    Kang IH, Hwang SH, Baek YJ, Kim SG, Han YL, Kang MS, Woo JG, Lee JM, Yu ES, Bae BS.
    ACS Omega; 2021 Feb 02; 6(4):2717-2726. PubMed ID: 33553889
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  • 36. Near-ideal subthreshold swing MoS2 back-gate transistors with an optimized ultrathin HfO2 dielectric layer.
    Pan Y, Jia K, Huang K, Wu Z, Bai G, Yu J, Zhang Z, Zhang Q, Yin H.
    Nanotechnology; 2019 Mar 01; 30(9):095202. PubMed ID: 30561381
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  • 37. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.
    Qin G, Zhang Y, Lan K, Li L, Ma J, Yu S.
    ACS Appl Mater Interfaces; 2018 Apr 18; 10(15):12798-12806. PubMed ID: 29564894
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  • 38. Multifunctional Hybrid Multilayer Gate Dielectrics with Tunable Surface Energy for Ultralow-Power Organic and Amorphous Oxide Thin-Film Transistors.
    Byun HR, You EA, Ha YG.
    ACS Appl Mater Interfaces; 2017 Mar 01; 9(8):7347-7354. PubMed ID: 28150486
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  • 39. CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer.
    Min SY, Cho WJ.
    Sci Rep; 2020 Sep 23; 10(1):15561. PubMed ID: 32968169
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  • 40. Design and analysis of IGZO thin film transistor for AMOLED pixel circuit using double-gate tri active layer channel.
    Dargar SK, Srivastava VM.
    Heliyon; 2019 Apr 23; 5(4):e01452. PubMed ID: 31008392
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