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Journal Abstract Search

231 related items for PubMed ID: 21913642

  • 1. Mobility-dependent low-frequency noise in graphene field-effect transistors.
    Zhang Y, Mendez EE, Du X.
    ACS Nano; 2011 Oct 25; 5(10):8124-30. PubMed ID: 21913642
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  • 2. Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms.
    Rumyantsev S, Liu G, Stillman W, Shur M, Balandin AA.
    J Phys Condens Matter; 2010 Oct 06; 22(39):395302. PubMed ID: 21403224
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  • 3. Low-frequency (1/f) noise in nanocrystal field-effect transistors.
    Lai Y, Li H, Kim DK, Diroll BT, Murray CB, Kagan CR.
    ACS Nano; 2014 Sep 23; 8(9):9664-72. PubMed ID: 25195975
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  • 6. Understanding the bias dependence of low frequency noise in single layer graphene FETs.
    Mavredakis N, Garcia Cortadella R, Bonaccini Calia A, Garrido JA, Jiménez D.
    Nanoscale; 2018 Aug 09; 10(31):14947-14956. PubMed ID: 30047555
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  • 7. Hysteresis of electronic transport in graphene transistors.
    Wang H, Wu Y, Cong C, Shang J, Yu T.
    ACS Nano; 2010 Dec 28; 4(12):7221-8. PubMed ID: 21047068
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  • 8. Charge noise in graphene transistors.
    Heller I, Chatoor S, Männik J, Zevenbergen MA, Oostinga JB, Morpurgo AF, Dekker C, Lemay SG.
    Nano Lett; 2010 May 12; 10(5):1563-7. PubMed ID: 20373788
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  • 11. DC modeling and the source of flicker noise in passivated carbon nanotube transistors.
    Kim S, Kim S, Janes DB, Mohammadi S, Back J, Shim M.
    Nanotechnology; 2010 Sep 24; 21(38):385203. PubMed ID: 20798468
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  • 12. Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene.
    Xu G, Torres CM, Zhang Y, Liu F, Song EB, Wang M, Zhou Y, Zeng C, Wang KL.
    Nano Lett; 2010 Sep 08; 10(9):3312-7. PubMed ID: 20684526
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  • 13. Magnitude and Origin of Electrical Noise at Individual Grain Boundaries in Graphene.
    Kochat V, Tiwary CS, Biswas T, Ramalingam G, Hsieh K, Chattopadhyay K, Raghavan S, Jain M, Ghosh A.
    Nano Lett; 2016 Jan 13; 16(1):562-7. PubMed ID: 26632989
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  • 20. Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors.
    Di Bartolomeo A, Giubileo F, Santandrea S, Romeo F, Citro R, Schroeder T, Lupina G.
    Nanotechnology; 2011 Jul 08; 22(27):275702. PubMed ID: 21597135
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