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Journal Abstract Search

310 related items for PubMed ID: 21941037

  • 1. Spiral growth and formation of stacking faults and vacancy islands during molecular beam epitaxy of InN on GaN(0001).
    Liu Y, Li L.
    Nanotechnology; 2011 Oct 21; 22(42):425707. PubMed ID: 21941037
    [Abstract] [Full Text] [Related]

  • 2. Defect structure in heteroepitaxial semipolar (1122) (Ga, Al)N.
    Arroyo Rojas Dasilva Y, Chauvat MP, Ruterana P, Lahourcade L, Monroy E, Nataf G.
    J Phys Condens Matter; 2010 Sep 08; 22(35):355802. PubMed ID: 21403298
    [Abstract] [Full Text] [Related]

  • 3. Electron standing waves on the GaN(0001)-pseudo (1 × 1) surface: a FT-STM study at room temperature.
    Sun GF, Liu Y, Qi Y, Jia JF, Xue QK, Weinert M, Li L.
    Nanotechnology; 2010 Oct 29; 21(43):435401. PubMed ID: 20890020
    [Abstract] [Full Text] [Related]

  • 4. Epitaxial growth of InN films by molecular-beam epitaxy using hydrazoic acid (HN3) as an efficient nitrogen source.
    Chen JT, Hsiao CL, Hsu HC, Wu CT, Yeh CL, Wei PC, Chen LC, Chen KH.
    J Phys Chem A; 2007 Jul 26; 111(29):6755-9. PubMed ID: 17500542
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  • 5. Observation of "Ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy.
    Zheng LX, Xie MH, Seutter SM, Cheung SH, Tong SY.
    Phys Rev Lett; 2000 Sep 11; 85(11):2352-5. PubMed ID: 10978008
    [Abstract] [Full Text] [Related]

  • 6. Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE.
    Tourbot G, Bougerol C, Grenier A, Den Hertog M, Sam-Giao D, Cooper D, Gilet P, Gayral B, Daudin B.
    Nanotechnology; 2011 Feb 18; 22(7):075601. PubMed ID: 21233547
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  • 8. Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy.
    Wang Y, Ruterana P, Chen J, Desplanque L, El Kazzi S, Wallart X.
    J Phys Condens Matter; 2012 Aug 22; 24(33):335802. PubMed ID: 22836299
    [Abstract] [Full Text] [Related]

  • 9. Molecular beam epitaxial growth and characterization of non-tapered InN nanowires on Si(111).
    Chang YL, Li F, Fatehi A, Mi Z.
    Nanotechnology; 2009 Aug 26; 20(34):345203. PubMed ID: 19652279
    [Abstract] [Full Text] [Related]

  • 10. Growth and characteristics of self-assembly defect-free GaN surface islands by molecular beam epitaxy.
    Hsu KY, Wang CY, Liu CP.
    J Nanosci Nanotechnol; 2011 Apr 26; 11(4):3393-8. PubMed ID: 21776715
    [Abstract] [Full Text] [Related]

  • 11. Structure investigations of nonpolar GaN layers.
    Neumann W, Mogilatenko A, Wernicke T, Richter E, Weyers M, Kneissl M.
    J Microsc; 2010 Mar 26; 237(3):308-13. PubMed ID: 20500386
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  • 13. An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE.
    Poppitz D, Lotnyk A, Gerlach JW, Lenzner J, Grundmann M, Rauschenbach B.
    Micron; 2015 Jun 26; 73():1-8. PubMed ID: 25846303
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  • 14. Selected growth of cubic and hexagonal GaN epitaxial films on polar MgO(111).
    Lazarov VK, Zimmerman J, Cheung SH, Li L, Weinert M, Gajdardziska-Josifovska M.
    Phys Rev Lett; 2005 Jun 03; 94(21):216101. PubMed ID: 16090332
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  • 15. Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE.
    Chen WC, Kuo SY, Wang WL, Tian JS, Lin WT, Lai FI, Chang L.
    Nanoscale Res Lett; 2012 Aug 21; 7(1):468. PubMed ID: 22908859
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  • 18. Effect of substrate on the atomic structure and physical properties of thermoelectric Ca₃Co₄O₉ thin films.
    Qiao Q, Gulec A, Paulauskas T, Kolesnik S, Dabrowski B, Ozdemir M, Boyraz C, Mazumdar D, Gupta A, Klie RF.
    J Phys Condens Matter; 2011 Aug 03; 23(30):305005. PubMed ID: 21719960
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