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Journal Abstract Search

313 related items for PubMed ID: 21963714

  • 1. Ambipolar field effect in the ternary topological insulator (Bi(x)Sb(1-x))2Te3 by composition tuning.
    Kong D, Chen Y, Cha JJ, Zhang Q, Analytis JG, Lai K, Liu Z, Hong SS, Koski KJ, Mo SK, Hussain Z, Fisher IR, Shen ZX, Cui Y.
    Nat Nanotechnol; 2011 Oct 02; 6(11):705-9. PubMed ID: 21963714
    [Abstract] [Full Text] [Related]

  • 2. Gate-controlled surface conduction in Na-doped Bi2Te3 topological insulator nanoplates.
    Wang Y, Xiu F, Cheng L, He L, Lang M, Tang J, Kou X, Yu X, Jiang X, Chen Z, Zou J, Wang KL.
    Nano Lett; 2012 Mar 14; 12(3):1170-5. PubMed ID: 22313251
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  • 3. Magnetic doping and kondo effect in bi(2)se(3) nanoribbons.
    Cha JJ, Williams JR, Kong D, Meister S, Peng H, Bestwick AJ, Gallagher P, Goldhaber-Gordon D, Cui Y.
    Nano Lett; 2010 Mar 10; 10(3):1076-81. PubMed ID: 20131918
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  • 4. Liquid-gated ambipolar transport in ultrathin films of a topological insulator Bi2Te3.
    Yuan H, Liu H, Shimotani H, Guo H, Chen M, Xue Q, Iwasa Y.
    Nano Lett; 2011 Jul 13; 11(7):2601-5. PubMed ID: 21696167
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  • 5. Band structure engineering in (Bi(1-x)Sb(x))(2)Te(3) ternary topological insulators.
    Zhang J, Chang CZ, Zhang Z, Wen J, Feng X, Li K, Liu M, He K, Wang L, Chen X, Xue QK, Ma X, Wang Y.
    Nat Commun; 2011 Dec 06; 2():574. PubMed ID: 22146393
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  • 6. Exfoliation and characterization of bismuth telluride atomic quintuples and quasi-two-dimensional crystals.
    Teweldebrhan D, Goyal V, Balandin AA.
    Nano Lett; 2010 Apr 14; 10(4):1209-18. PubMed ID: 20205455
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  • 12. Metal-insulator transition in variably doped (Bi(1-x)Sb(x))2Se3 nanosheets.
    Lee CH, He R, Wang Z, Qiu RL, Kumar A, Delaney C, Beck B, Kidd TE, Chancey CC, Sankaran RM, Gao XP.
    Nanoscale; 2013 May 21; 5(10):4337-43. PubMed ID: 23563061
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  • 14. Thermoelectric characteristics of the p-type (Bi, Sb)2Te3 nanocomposites processed with silicon nanodispersion.
    Kim MY, Yu BK, Choi JY, Oh TS.
    J Nanosci Nanotechnol; 2014 Oct 21; 14(10):7855-9. PubMed ID: 25942880
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  • 15. Graphene-based topological insulator with an intrinsic bulk band gap above room temperature.
    Kou L, Yan B, Hu F, Wu SC, Wehling TO, Felser C, Chen C, Frauenheim T.
    Nano Lett; 2013 Oct 21; 13(12):6251-5. PubMed ID: 24206392
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  • 16. A topological Dirac insulator in a quantum spin Hall phase.
    Hsieh D, Qian D, Wray L, Xia Y, Hor YS, Cava RJ, Hasan MZ.
    Nature; 2008 Apr 24; 452(7190):970-4. PubMed ID: 18432240
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  • 17. Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film.
    He L, Xiu F, Yu X, Teague M, Jiang W, Fan Y, Kou X, Lang M, Wang Y, Huang G, Yeh NC, Wang KL.
    Nano Lett; 2012 Mar 14; 12(3):1486-90. PubMed ID: 22316380
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  • 18. Robust surface doping of Bi2Se3 by rubidium intercalation.
    Bianchi M, Hatch RC, Li Z, Hofmann P, Song F, Mi J, Iversen BB, El-Fattah ZM, Löptien P, Zhou L, Khajetoorians AA, Wiebe J, Wiesendanger R, Wells JW.
    ACS Nano; 2012 Aug 28; 6(8):7009-15. PubMed ID: 22838508
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