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Journal Abstract Search

254 related items for PubMed ID: 22081084

  • 1. Electric-field-assisted switching in magnetic tunnel junctions.
    Wang WG, Li M, Hageman S, Chien CL.
    Nat Mater; 2011 Nov 13; 11(1):64-8. PubMed ID: 22081084
    [Abstract] [Full Text] [Related]

  • 2. Voltage-Assisted Magnetic Switching in MgO/CoFeB-Based Magnetic Tunnel Junctions by Way of Interface Reconstruction.
    Ko J, Hong J.
    ACS Appl Mater Interfaces; 2017 Dec 06; 9(48):42296-42301. PubMed ID: 29154533
    [Abstract] [Full Text] [Related]

  • 3. Origin of easy magnetization switching in magnetic tunnel junctions with voltage-controlled interfacial anisotropy.
    Pertsev NA.
    Sci Rep; 2013 Sep 25; 3():2757. PubMed ID: 24067783
    [Abstract] [Full Text] [Related]

  • 4. Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers.
    Zhou B, Khanal P, Benally OJ, Lyu D, Gopman DB, Enriquez A, Habiboglu A, Warrilow K, Wang JP, Wang WG.
    Sci Rep; 2023 Mar 01; 13(1):3454. PubMed ID: 36859656
    [Abstract] [Full Text] [Related]

  • 5. Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control.
    Liu H, Wang R, Guo P, Wen Z, Feng J, Wei H, Han X, Ji Y, Zhang S.
    Sci Rep; 2015 Dec 14; 5():18269. PubMed ID: 26658213
    [Abstract] [Full Text] [Related]

  • 6. Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance.
    Wang M, Cai W, Cao K, Zhou J, Wrona J, Peng S, Yang H, Wei J, Kang W, Zhang Y, Langer J, Ocker B, Fert A, Zhao W.
    Nat Commun; 2018 Feb 14; 9(1):671. PubMed ID: 29445186
    [Abstract] [Full Text] [Related]

  • 7. Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions.
    Xu M, Li M, Khanal P, Habiboglu A, Insana B, Xiong Y, Peterson T, Myers JC, Ortega D, Qu H, Chien CL, Zhang W, Wang JP, Wang WG.
    Phys Rev Lett; 2020 May 08; 124(18):187701. PubMed ID: 32441982
    [Abstract] [Full Text] [Related]

  • 8. Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling.
    Chen A, Wen Y, Fang B, Zhao Y, Zhang Q, Chang Y, Li P, Wu H, Huang H, Lu Y, Zeng Z, Cai J, Han X, Wu T, Zhang XX, Zhao Y.
    Nat Commun; 2019 Jan 16; 10(1):243. PubMed ID: 30651541
    [Abstract] [Full Text] [Related]

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  • 11. Spin-orbit torque driven magnetization switching in W/CoFeB/MgO-based type-Y three terminal magnetic tunnel junctions.
    Isogami S, Shiokawa Y, Tsumita A, Komura E, Ishitani Y, Hamanaka K, Taniguchi T, Mitani S, Sasaki T, Hayashi M.
    Sci Rep; 2021 Aug 17; 11(1):16676. PubMed ID: 34404830
    [Abstract] [Full Text] [Related]

  • 12. On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect.
    Boehnke A, Milnikel M, von der Ehe M, Franz C, Zbarsky V, Czerner M, Rott K, Thomas A, Heiliger C, Reiss G, Münzenberg M.
    Sci Rep; 2015 Mar 10; 5():8945. PubMed ID: 25755010
    [Abstract] [Full Text] [Related]

  • 13. Ultra-efficient spin-orbit torque induced magnetic switching in W/CoFeB/MgO structures.
    Zhao X, Zhang X, Yang H, Cai W, Zhao Y, Wang Z, Zhao W.
    Nanotechnology; 2019 Aug 16; 30(33):335707. PubMed ID: 31018193
    [Abstract] [Full Text] [Related]

  • 14. Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory.
    Iwata-Harms JM, Jan G, Serrano-Guisan S, Thomas L, Liu H, Zhu J, Lee YJ, Le S, Tong RY, Patel S, Sundar V, Shen D, Yang Y, He R, Haq J, Teng Z, Lam V, Liu P, Wang YJ, Zhong T, Fukuzawa H, Wang PK.
    Sci Rep; 2019 Dec 19; 9(1):19407. PubMed ID: 31857596
    [Abstract] [Full Text] [Related]

  • 15. Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions.
    Watanabe K, Jinnai B, Fukami S, Sato H, Ohno H.
    Nat Commun; 2018 Feb 14; 9(1):663. PubMed ID: 29445169
    [Abstract] [Full Text] [Related]

  • 16. Understanding stability diagram of perpendicular magnetic tunnel junctions.
    Skowroński W, Czapkiewicz M, Ziętek S, Chęciński J, Frankowski M, Rzeszut P, Wrona J.
    Sci Rep; 2017 Aug 31; 7(1):10172. PubMed ID: 28860571
    [Abstract] [Full Text] [Related]

  • 17. Voltage control of magnetic anisotropy in epitaxial Ru/Co2FeAl/MgO heterostructures.
    Wen Z, Sukegawa H, Seki T, Kubota T, Takanashi K, Mitani S.
    Sci Rep; 2017 Mar 23; 7():45026. PubMed ID: 28332569
    [Abstract] [Full Text] [Related]

  • 18. Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions.
    Newhouse-Illige T, Liu Y, Xu M, Reifsnyder Hickey D, Kundu A, Almasi H, Bi C, Wang X, Freeland JW, Keavney DJ, Sun CJ, Xu YH, Rosales M, Cheng XM, Zhang S, Mkhoyan KA, Wang WG.
    Nat Commun; 2017 May 16; 8():15232. PubMed ID: 28508882
    [Abstract] [Full Text] [Related]

  • 19. Magnetisation switching dynamics induced by combination of spin transfer torque and spin orbit torque.
    Meo A, Chureemart J, Chantrell RW, Chureemart P.
    Sci Rep; 2022 Mar 01; 12(1):3380. PubMed ID: 35233036
    [Abstract] [Full Text] [Related]

  • 20. Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy.
    Du Q, Wang W, Tang F, Su W, Wu J, Hu Z, Wang Z, Liu M.
    ACS Appl Mater Interfaces; 2024 Feb 14; 16(6):7463-7469. PubMed ID: 38300878
    [Abstract] [Full Text] [Related]

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