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Journal Abstract Search

300 related items for PubMed ID: 22111808

  • 1. Reconfigurable silicon nanowire transistors.
    Heinzig A, Slesazeck S, Kreupl F, Mikolajick T, Weber WM.
    Nano Lett; 2012 Jan 11; 12(1):119-24. PubMed ID: 22111808
    [Abstract] [Full Text] [Related]

  • 2. Fabrication of poly-silicon nano-wire transistors on plastic substrates.
    Park C, Lee S, Choi M, Kang M, Jung Y, Hwang S, Ahn D, Lee J, Song C.
    J Nanosci Nanotechnol; 2007 Nov 11; 7(11):4150-3. PubMed ID: 18047139
    [Abstract] [Full Text] [Related]

  • 3. Multifunctional devices and logic gates with undoped silicon nanowires.
    Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S.
    Nano Lett; 2012 Jun 13; 12(6):3074-9. PubMed ID: 22594644
    [Abstract] [Full Text] [Related]

  • 4. Realization of a silicon nanowire vertical surround-gate field-effect transistor.
    Schmidt V, Riel H, Senz S, Karg S, Riess W, Gösele U.
    Small; 2006 Jan 13; 2(1):85-8. PubMed ID: 17193560
    [No Abstract] [Full Text] [Related]

  • 5. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
    Yoon A, Hong WK, Lee T.
    J Nanosci Nanotechnol; 2007 Nov 13; 7(11):4101-5. PubMed ID: 18047128
    [Abstract] [Full Text] [Related]

  • 6. Few electron limit of n-type metal oxide semiconductor single electron transistors.
    Prati E, De Michielis M, Belli M, Cocco S, Fanciulli M, Kotekar-Patil D, Ruoff M, Kern DP, Wharam DA, Verduijn J, Tettamanzi GC, Rogge S, Roche B, Wacquez R, Jehl X, Vinet M, Sanquer M.
    Nanotechnology; 2012 Jun 01; 23(21):215204. PubMed ID: 22552118
    [Abstract] [Full Text] [Related]

  • 7. Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.
    Jeon Y, Kang J, Lee M, Moon T, Kim S.
    J Nanosci Nanotechnol; 2013 May 01; 13(5):3350-3. PubMed ID: 23858857
    [Abstract] [Full Text] [Related]

  • 8. Transformable functional nanoscale building blocks with wafer-scale silicon nanowires.
    Choi SJ, Ahn JH, Han JW, Seol ML, Moon DI, Kim S, Choi YK.
    Nano Lett; 2011 Feb 09; 11(2):854-9. PubMed ID: 21254772
    [Abstract] [Full Text] [Related]

  • 9. Quantum confinement induced performance enhancement in sub-5-nm lithographic Si nanowire transistors.
    Trivedi K, Yuk H, Floresca HC, Kim MJ, Hu W.
    Nano Lett; 2011 Apr 13; 11(4):1412-7. PubMed ID: 21375286
    [Abstract] [Full Text] [Related]

  • 10. Fabrication of suspended silicon nanowire arrays.
    Lee KN, Jung SW, Shin KS, Kim WH, Lee MH, Seong WK.
    Small; 2008 May 13; 4(5):642-8. PubMed ID: 18431721
    [Abstract] [Full Text] [Related]

  • 11. Measurement of carrier mobility in silicon nanowires.
    Gunawan O, Sekaric L, Majumdar A, Rooks M, Appenzeller J, Sleight JW, Guha S, Haensch W.
    Nano Lett; 2008 Jun 13; 8(6):1566-71. PubMed ID: 18444687
    [Abstract] [Full Text] [Related]

  • 12. Nanowire lithography on silicon.
    Colli A, Fasoli A, Pisana S, Fu Y, Beecher P, Milne WI, Ferrari AC.
    Nano Lett; 2008 May 13; 8(5):1358-62. PubMed ID: 18386934
    [Abstract] [Full Text] [Related]

  • 13. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics.
    Ju S, Facchetti A, Xuan Y, Liu J, Ishikawa F, Ye P, Zhou C, Marks TJ, Janes DB.
    Nat Nanotechnol; 2007 Jun 13; 2(6):378-84. PubMed ID: 18654311
    [Abstract] [Full Text] [Related]

  • 14. Fully transparent thin-film transistor devices based on SnO2 nanowires.
    Dattoli EN, Wan Q, Guo W, Chen Y, Pan X, Lu W.
    Nano Lett; 2007 Aug 13; 7(8):2463-9. PubMed ID: 17595151
    [Abstract] [Full Text] [Related]

  • 15. Fully depleted nanowire field-effect transistor in inversion mode.
    Hayden O, Björk MT, Schmid H, Riel H, Drechsler U, Karg SF, Lörtscher E, Riess W.
    Small; 2007 Feb 13; 3(2):230-4. PubMed ID: 17199244
    [No Abstract] [Full Text] [Related]

  • 16. Enhanced channel modulation in dual-gated silicon nanowire transistors.
    Koo SM, Li Q, Edelstein MD, Richter CA, Vogel EM.
    Nano Lett; 2005 Dec 13; 5(12):2519-23. PubMed ID: 16351207
    [Abstract] [Full Text] [Related]

  • 17. Self-assembling silicon nanowires for device applications using the nanochannel-guided "grow-in-place" approach.
    Shan Y, Fonash SJ.
    ACS Nano; 2008 Mar 13; 2(3):429-34. PubMed ID: 19206566
    [Abstract] [Full Text] [Related]

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  • 19. Programmable direct-printing nanowire electronic components.
    Lee TI, Choi WJ, Moon KJ, Choi JH, Kar JP, Das SN, Kim YS, Baik HK, Myoung JM.
    Nano Lett; 2010 Mar 10; 10(3):1016-21. PubMed ID: 20108927
    [Abstract] [Full Text] [Related]

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