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Journal Abstract Search

510 related items for PubMed ID: 22121652

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  • 2. Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors.
    Huang YC, Yang PY, Huang HY, Wang SJ, Cheng HC.
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5625-30. PubMed ID: 22966622
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  • 4. Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar-O2 Mixed Plasma Treatment and Rapid Thermal Annealing.
    Liu WS, Hsu CH, Jiang Y, Lai YC, Kuo HC.
    Membranes (Basel); 2021 Dec 30; 12(1):. PubMed ID: 35054574
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  • 5. Effect of organic buffer layer in the electrical properties of amorphous-indium gallium zinc oxide thin film transistor.
    Wang JX, Hyung GW, Li ZH, Son SY, Kwon SJ, Kim YK, Cho ES.
    J Nanosci Nanotechnol; 2012 Jul 30; 12(7):5644-7. PubMed ID: 22966625
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  • 7. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors.
    Han Y, Lee DH, Cho ES, Kwon SJ, Yoo H.
    Micromachines (Basel); 2023 Jul 08; 14(7):. PubMed ID: 37512704
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  • 13. Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance.
    Hu S, Lu K, Ning H, Yao R, Gong Y, Pan Z, Guo C, Wang J, Pang C, Gong Z, Peng J.
    Nanomaterials (Basel); 2021 Feb 18; 11(2):. PubMed ID: 33670767
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  • 15. Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing.
    Zhang X, Li Y, Li Y, Xie X, Yin L.
    Micromachines (Basel); 2024 Jan 31; 15(2):. PubMed ID: 38398954
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  • 17. Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.
    Wu CH, Chang KM, Chen YM, Huang BW, Zhang YX, Wang SJ.
    J Nanosci Nanotechnol; 2018 Mar 01; 18(3):1917-1921. PubMed ID: 29448683
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  • 18. Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array.
    Kim HJ, Han CJ, Yoo B, Lee J, Lee K, Lee KH, Oh MS.
    Micromachines (Basel); 2020 May 18; 11(5):. PubMed ID: 32443447
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  • 20. The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors.
    Wu CH, Chang KM, Chen YM, Zhang YX, Cheng CY.
    J Nanosci Nanotechnol; 2019 Apr 01; 19(4):2189-2192. PubMed ID: 30486965
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