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Journal Abstract Search

175 related items for PubMed ID: 22146394

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  • 3. Gate-controlled surface conduction in Na-doped Bi2Te3 topological insulator nanoplates.
    Wang Y, Xiu F, Cheng L, He L, Lang M, Tang J, Kou X, Yu X, Jiang X, Chen Z, Zou J, Wang KL.
    Nano Lett; 2012 Mar 14; 12(3):1170-5. PubMed ID: 22313251
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  • 5. Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators.
    Xu Y, Miotkowski I, Chen YP.
    Nat Commun; 2016 May 04; 7():11434. PubMed ID: 27142344
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  • 6. Tunable Dirac fermion dynamics in topological insulators.
    Chen C, Xie Z, Feng Y, Yi H, Liang A, He S, Mou D, He J, Peng Y, Liu X, Liu Y, Zhao L, Liu G, Dong X, Zhang J, Yu L, Wang X, Peng Q, Wang Z, Zhang S, Yang F, Chen C, Xu Z, Zhou XJ.
    Sci Rep; 2013 May 04; 3():2411. PubMed ID: 23934507
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  • 9. Ambipolar field effect in the ternary topological insulator (Bi(x)Sb(1-x))2Te3 by composition tuning.
    Kong D, Chen Y, Cha JJ, Zhang Q, Analytis JG, Lai K, Liu Z, Hong SS, Koski KJ, Mo SK, Hussain Z, Fisher IR, Shen ZX, Cui Y.
    Nat Nanotechnol; 2011 Oct 02; 6(11):705-9. PubMed ID: 21963714
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  • 10. Stable topological insulators achieved using high energy electron beams.
    Zhao L, Konczykowski M, Deng H, Korzhovska I, Begliarbekov M, Chen Z, Papalazarou E, Marsi M, Perfetti L, Hruban A, Wołoś A, Krusin-Elbaum L.
    Nat Commun; 2016 Mar 10; 7():10957. PubMed ID: 26961901
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  • 17. Topological Insulator-Based van der Waals Heterostructures for Effective Control of Massless and Massive Dirac Fermions.
    Chong SK, Han KB, Nagaoka A, Tsuchikawa R, Liu R, Liu H, Vardeny ZV, Pesin DA, Lee C, Sparks TD, Deshpande VV.
    Nano Lett; 2018 Dec 12; 18(12):8047-8053. PubMed ID: 30406664
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  • 19. Manipulating surface-related ferromagnetism in modulation-doped topological insulators.
    Kou X, He L, Lang M, Fan Y, Wong K, Jiang Y, Nie T, Jiang W, Upadhyaya P, Xing Z, Wang Y, Xiu F, Schwartz RN, Wang KL.
    Nano Lett; 2013 Oct 09; 13(10):4587-93. PubMed ID: 24020459
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  • 20. Tunable Dirac Electron and Hole Self-Doping of Topological Insulators Induced by Stacking Defects.
    Aramberri H, Cerdá JI, Muñoz MC.
    Nano Lett; 2015 Jun 10; 15(6):3840-4. PubMed ID: 25955766
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