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Journal Abstract Search

95 related items for PubMed ID: 22314270

  • 1.
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  • 3. Mechanism of self-assembled growth of ordered GaAs nanowire arrays by metalorganic vapor phase epitaxy on GaAs vicinal substrates.
    Mohan P, Bag R, Singh S, Kumar A, Tyagi R.
    Nanotechnology; 2012 Jan 20; 23(2):025601. PubMed ID: 22166369
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  • 4. Self-catalyzed VLS grown InAs nanowires with twinning superlattices.
    Grap T, Rieger T, Blömers Ch, Schäpers T, Grützmacher D, Lepsa MI.
    Nanotechnology; 2013 Aug 23; 24(33):335601. PubMed ID: 23881182
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  • 5. Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon.
    Matteini F, Dubrovskii VG, Rüffer D, Tütüncüoğlu G, Fontana Y, Morral AF.
    Nanotechnology; 2015 Mar 13; 26(10):105603. PubMed ID: 25687793
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  • 6. High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga.
    Russo-Averchi E, Vukajlovic Plestina J, Tütüncüoglu G, Matteini F, Dalmau-Mallorquí A, de la Mata M, Rüffer D, Potts HA, Arbiol J, Conesa-Boj S, Fontcuberta i Morral A.
    Nano Lett; 2015 May 13; 15(5):2869-74. PubMed ID: 25894762
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  • 7. Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.
    Dubrovskii VG, Xu T, Álvarez AD, Plissard SR, Caroff P, Glas F, Grandidier B.
    Nano Lett; 2015 Aug 12; 15(8):5580-4. PubMed ID: 26189571
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  • 8. Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.
    Plissard S, Dick KA, Larrieu G, Godey S, Addad A, Wallart X, Caroff P.
    Nanotechnology; 2010 Sep 24; 21(38):385602. PubMed ID: 20798467
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  • 9. III-V Integration on Si(100): Vertical Nanospades.
    Güniat L, Martí-Sánchez S, Garcia O, Boscardin M, Vindice D, Tappy N, Friedl M, Kim W, Zamani M, Francaviglia L, Balgarkashi A, Leran JB, Arbiol J, Fontcuberta I Morral A.
    ACS Nano; 2019 May 28; 13(5):5833-5840. PubMed ID: 31038924
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  • 10. Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy.
    Bauer B, Rudolph A, Soda M, Fontcuberta i Morral A, Zweck J, Schuh D, Reiger E.
    Nanotechnology; 2010 Oct 29; 21(43):435601. PubMed ID: 20876983
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  • 11. Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate.
    Tomioka K, Kobayashi Y, Motohisa J, Hara S, Fukui T.
    Nanotechnology; 2009 Apr 08; 20(14):145302. PubMed ID: 19420521
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  • 13. Twinning superlattice formation in GaAs nanowires.
    Burgess T, Breuer S, Caroff P, Wong-Leung J, Gao Q, Hoe Tan H, Jagadish C.
    ACS Nano; 2013 Sep 24; 7(9):8105-14. PubMed ID: 23987994
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  • 14. Formation Mechanism of Twinning Superlattices in Doped GaAs Nanowires.
    Isik Goktas N, Sokolovskii A, Dubrovskii VG, LaPierre RR.
    Nano Lett; 2020 May 13; 20(5):3344-3351. PubMed ID: 32239956
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  • 16. Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control.
    Fonseka HA, Caroff P, Wong-Leung J, Ameruddin AS, Tan HH, Jagadish C.
    ACS Nano; 2014 Jul 22; 8(7):6945-54. PubMed ID: 24883914
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  • 18. The influence of the surface migration of gold on the growth of silicon nanowires.
    Hannon JB, Kodambaka S, Ross FM, Tromp RM.
    Nature; 2006 Mar 02; 440(7080):69-71. PubMed ID: 16452928
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