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171 related items for PubMed ID: 22364406

  • 1. Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions.
    Gutsche C, Niepelt R, Gnauck M, Lysov A, Prost W, Ronning C, Tegude FJ.
    Nano Lett; 2012 Mar 14; 12(3):1453-8. PubMed ID: 22364406
    [Abstract] [Full Text] [Related]

  • 2. Effects of gold diffusion on n-type doping of GaAs nanowires.
    Tambe MJ, Ren S, Gradecak S.
    Nano Lett; 2010 Nov 10; 10(11):4584-9. PubMed ID: 20939583
    [Abstract] [Full Text] [Related]

  • 3. GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.
    Tomioka K, Motohisa J, Hara S, Hiruma K, Fukui T.
    Nano Lett; 2010 May 12; 10(5):1639-44. PubMed ID: 20377199
    [Abstract] [Full Text] [Related]

  • 4. Single GaAs/GaAsP coaxial core-shell nanowire lasers.
    Hua B, Motohisa J, Kobayashi Y, Hara S, Fukui T.
    Nano Lett; 2009 Jan 12; 9(1):112-6. PubMed ID: 19072060
    [Abstract] [Full Text] [Related]

  • 5. Electrical and optical characterization of surface passivation in GaAs nanowires.
    Chang CC, Chi CY, Yao M, Huang N, Chen CC, Theiss J, Bushmaker AW, Lalumondiere S, Yeh TW, Povinelli ML, Zhou C, Dapkus PD, Cronin SB.
    Nano Lett; 2012 Sep 12; 12(9):4484-9. PubMed ID: 22889241
    [Abstract] [Full Text] [Related]

  • 6. Effects of a shell on the electronic properties of nanowire superlattices.
    Niquet YM.
    Nano Lett; 2007 Apr 12; 7(4):1105-9. PubMed ID: 17385931
    [Abstract] [Full Text] [Related]

  • 7. Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.
    Manna S, Ashok VD, De SK.
    ACS Appl Mater Interfaces; 2010 Dec 12; 2(12):3539-43. PubMed ID: 21121615
    [Abstract] [Full Text] [Related]

  • 8. Tailoring the vapor-liquid-solid growth toward the self-assembly of GaAs nanowire junctions.
    Dai X, Dayeh SA, Veeramuthu V, Larrue A, Wang J, Su H, Soci C.
    Nano Lett; 2011 Nov 09; 11(11):4947-52. PubMed ID: 21967168
    [Abstract] [Full Text] [Related]

  • 9. Effect of carbon tetrabromide on the morphology of GaAs nanowires.
    Salehzadeh O, Watkins SP.
    Nanotechnology; 2011 Apr 22; 22(16):165603. PubMed ID: 21393824
    [Abstract] [Full Text] [Related]

  • 10. P-doping mechanisms in catalyst-free gallium arsenide nanowires.
    Dufouleur J, Colombo C, Garma T, Ketterer B, Uccelli E, Nicotra M, Fontcuberta i Morral A.
    Nano Lett; 2010 May 12; 10(5):1734-40. PubMed ID: 20373777
    [Abstract] [Full Text] [Related]

  • 11. GaAs core--shell nanowires for photovoltaic applications.
    Czaban JA, Thompson DA, LaPierre RR.
    Nano Lett; 2009 Jan 12; 9(1):148-54. PubMed ID: 19143502
    [Abstract] [Full Text] [Related]

  • 12. GaAs/AlGaAs nanowire heterostructures studied by scanning tunneling microscopy.
    Ouattara L, Mikkelsen A, Sköld N, Eriksson J, Knaapen T, Cavar E, Seifert W, Samuelson L, Lundgren E.
    Nano Lett; 2007 Sep 12; 7(9):2859-64. PubMed ID: 17722945
    [Abstract] [Full Text] [Related]

  • 13. Self-directed growth of AlGaAs core-shell nanowires for visible light applications.
    Chen C, Shehata S, Fradin C, LaPierre R, Couteau C, Weihs G.
    Nano Lett; 2007 Sep 12; 7(9):2584-9. PubMed ID: 17696557
    [Abstract] [Full Text] [Related]

  • 14. Growth of silver nanowires on GaAs wafers.
    Sun Y.
    Nanoscale; 2011 May 12; 3(5):2247-55. PubMed ID: 21483977
    [Abstract] [Full Text] [Related]

  • 15. Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy.
    Choi W, Zhang G, Huang HC, Mohseni PK, Zhang C, Kim JD, Li X.
    Nanotechnology; 2021 Oct 06; 32(50):. PubMed ID: 34044379
    [Abstract] [Full Text] [Related]

  • 16. A binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topology.
    Zhao HQ, Kasai S, Shiratori Y, Hashizume T.
    Nanotechnology; 2009 Jun 17; 20(24):245203. PubMed ID: 19468164
    [Abstract] [Full Text] [Related]

  • 17. Linear scaling calculation of an n-type GaAs quantum dot.
    Nomura S, Iitaka T.
    Phys Rev E Stat Nonlin Soft Matter Phys; 2007 Sep 17; 76(3 Pt 2):037701. PubMed ID: 17930374
    [Abstract] [Full Text] [Related]

  • 18. Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires.
    Montazeri M, Fickenscher M, Smith LM, Jackson HE, Yarrison-Rice J, Kang JH, Gao Q, Tan HH, Jagadish C, Guo Y, Zou J, Pistol ME, Pryor CE.
    Nano Lett; 2010 Mar 10; 10(3):880-6. PubMed ID: 20131863
    [Abstract] [Full Text] [Related]

  • 19. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.
    Chuang LC, Sedgwick FG, Chen R, Ko WS, Moewe M, Ng KW, Tran TT, Chang-Hasnain C.
    Nano Lett; 2011 Feb 09; 11(2):385-90. PubMed ID: 21174451
    [Abstract] [Full Text] [Related]

  • 20. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.
    Munshi AM, Dheeraj DL, Fauske VT, Kim DC, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2012 Sep 12; 12(9):4570-6. PubMed ID: 22889019
    [Abstract] [Full Text] [Related]

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