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Journal Abstract Search

336 related items for PubMed ID: 22535092

  • 1. High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.
    Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.
    Opt Express; 2012 Apr 23; 20(9):9999-10003. PubMed ID: 22535092
    [Abstract] [Full Text] [Related]

  • 2. Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
    Cho CY, Lee JB, Lee SJ, Han SH, Park TY, Kim JW, Kim YC, Park SJ.
    Opt Express; 2010 Jan 18; 18(2):1462-8. PubMed ID: 20173974
    [Abstract] [Full Text] [Related]

  • 3. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.
    Zhang ZH, Tan ST, Liu W, Ju Z, Zheng K, Kyaw Z, Ji Y, Hasanov N, Sun XW, Demir HV.
    Opt Express; 2013 Feb 25; 21(4):4958-69. PubMed ID: 23482028
    [Abstract] [Full Text] [Related]

  • 4. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.
    Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.
    Opt Express; 2011 Jan 17; 19(2):1065-71. PubMed ID: 21263645
    [Abstract] [Full Text] [Related]

  • 5. Vertical InGaN light-emitting diodes with a sapphire-face-up structure.
    Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK.
    Opt Express; 2012 Jan 02; 20(1):A119-24. PubMed ID: 22379672
    [Abstract] [Full Text] [Related]

  • 6. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.
    Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.
    Opt Express; 2014 Jan 13; 22(1):809-16. PubMed ID: 24515040
    [Abstract] [Full Text] [Related]

  • 7. Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.
    Park YJ, Kim HY, Ryu JH, Kim HK, Kang JH, Han N, Han M, Jeong H, Jeong MS, Hong CH.
    Opt Express; 2011 Jan 31; 19(3):2029-36. PubMed ID: 21369019
    [Abstract] [Full Text] [Related]

  • 8. Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.
    Jang LW, Ju JW, Jeon DW, Park JW, Polyakov AY, Lee SJ, Baek JH, Lee SM, Cho YH, Lee IH.
    Opt Express; 2012 Mar 12; 20(6):6036-41. PubMed ID: 22418481
    [Abstract] [Full Text] [Related]

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  • 11. Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.
    Son JH, Lee JL.
    Opt Express; 2010 Mar 15; 18(6):5466-71. PubMed ID: 20389563
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  • 13. Evaluation of InGaN/GaN light-emitting diodes of circular geometry.
    Wang XH, Fu WY, Lai PT, Choi HW.
    Opt Express; 2009 Dec 07; 17(25):22311-9. PubMed ID: 20052154
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  • 18. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
    Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S.
    Opt Express; 2013 Jan 14; 21 Suppl 1():A53-9. PubMed ID: 23389275
    [Abstract] [Full Text] [Related]

  • 19. Light extraction enhancement for InGaN/GaN LED by three dimensional auto-cloned photonics crystal.
    Huang CY, Ku HM, Chao S.
    Opt Express; 2009 Dec 21; 17(26):23702-11. PubMed ID: 20052081
    [Abstract] [Full Text] [Related]

  • 20. Coherent vertical beaming using Bragg mirrors for high-efficiency GaN light-emitting diodes.
    Kim SK, Park HG.
    Opt Express; 2013 Jun 17; 21(12):14566-72. PubMed ID: 23787644
    [Abstract] [Full Text] [Related]

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