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Journal Abstract Search

484 related items for PubMed ID: 22552118

  • 21. Ultrashort free-carrier lifetime in low-loss silicon nanowaveguides.
    Turner-Foster AC, Foster MA, Levy JS, Poitras CB, Salem R, Gaeta AL, Lipson M.
    Opt Express; 2010 Feb 15; 18(4):3582-91. PubMed ID: 20389367
    [Abstract] [Full Text] [Related]

  • 22. Gating electrical transport through DNA molecules that bridge between silicon nanogaps.
    Takagi S, Takada T, Matsuo N, Yokoyama S, Nakamura M, Yamana K.
    Nanoscale; 2012 Mar 21; 4(6):1975-7. PubMed ID: 22334054
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  • 23. Semiconductors: chip maker turns to self-assembly.
    Rodgers P.
    Nat Nanotechnol; 2007 Jun 21; 2(6):342. PubMed ID: 18654302
    [No Abstract] [Full Text] [Related]

  • 24. Nanoparticle-coated n-ZnO/p-Si photodiodes with improved photoresponsivities and acceptance angles for potential solar cell applications.
    Chen CP, Lin PH, Chen LY, Ke MY, Cheng YW, Huang J.
    Nanotechnology; 2009 Jun 17; 20(24):245204. PubMed ID: 19468172
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  • 25. Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2 substrates.
    Joshi P, Romero HE, Neal AT, Toutam VK, Tadigadapa SA.
    J Phys Condens Matter; 2010 Aug 25; 22(33):334214. PubMed ID: 21386504
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  • 26. Electrical transport and field-effect transistors using inkjet-printed SWCNT films having different functional side groups.
    Gracia-Espino E, Sala G, Pino F, Halonen N, Luomahaara J, Mäklin J, Tóth G, Kordás K, Jantunen H, Terrones M, Helistö P, Seppä H, Ajayan PM, Vajtai R.
    ACS Nano; 2010 Jun 22; 4(6):3318-24. PubMed ID: 20481513
    [Abstract] [Full Text] [Related]

  • 27. Issues of nanoelectronics: a possible roadmap.
    Wang KL.
    J Nanosci Nanotechnol; 2002 Jun 22; 2(3-4):235-66. PubMed ID: 12908252
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  • 28. Nanometer-scale modification and welding of silicon and metallic nanowires with a high-intensity electron beam.
    Xu S, Tian M, Wang J, Xu J, Redwing JM, Chan MH.
    Small; 2005 Dec 22; 1(12):1221-9. PubMed ID: 17193423
    [Abstract] [Full Text] [Related]

  • 29. SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting.
    Du W, Inokawa H, Satoh H, Ono A.
    Opt Lett; 2011 Aug 01; 36(15):2800-2. PubMed ID: 21808317
    [Abstract] [Full Text] [Related]

  • 30. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.
    Lee W, Su P.
    Nanotechnology; 2009 Feb 11; 20(6):065202. PubMed ID: 19417374
    [Abstract] [Full Text] [Related]

  • 31. Multifunctional devices and logic gates with undoped silicon nanowires.
    Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S.
    Nano Lett; 2012 Jun 13; 12(6):3074-9. PubMed ID: 22594644
    [Abstract] [Full Text] [Related]

  • 32. Control of semiconducting and metallic indium oxide nanowires.
    Lim T, Lee S, Meyyappan M, Ju S.
    ACS Nano; 2011 May 24; 5(5):3917-22. PubMed ID: 21504171
    [Abstract] [Full Text] [Related]

  • 33. Characterizations of realized metal-insulator-silicon-insulator-metal waveguides and nanochannel fabrication via insulator removal.
    Kwon MS, Shin JS, Shin SY, Lee WG.
    Opt Express; 2012 Sep 24; 20(20):21875-87. PubMed ID: 23037337
    [Abstract] [Full Text] [Related]

  • 34. Self-aligned T-gate high-purity semiconducting carbon nanotube RF transistors operated in quasi-ballistic transport and quantum capacitance regime.
    Che Y, Badmaev A, Jooyaie A, Wu T, Zhang J, Wang C, Galatsis K, Enaya HA, Zhou C.
    ACS Nano; 2012 Aug 28; 6(8):6936-43. PubMed ID: 22768974
    [Abstract] [Full Text] [Related]

  • 35. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.
    Cong GW, Matsukawa T, Chiba T, Tadokoro H, Yanagihara M, Ohno M, Kawashima H, Kuwatsuka H, Igarashi Y, Masahara M, Ishikawa H.
    Opt Express; 2013 Mar 25; 21(6):6889-94. PubMed ID: 23546071
    [Abstract] [Full Text] [Related]

  • 36. Contact and edge effects in graphene devices.
    Lee EJ, Balasubramanian K, Weitz RT, Burghard M, Kern K.
    Nat Nanotechnol; 2008 Aug 25; 3(8):486-90. PubMed ID: 18685636
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  • 37. Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell.
    Hirschmann J, Faber H, Halik M.
    Nanoscale; 2012 Jan 21; 4(2):444-7. PubMed ID: 22159764
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  • 38. Fabrication of suspended silicon nanowire arrays.
    Lee KN, Jung SW, Shin KS, Kim WH, Lee MH, Seong WK.
    Small; 2008 May 21; 4(5):642-8. PubMed ID: 18431721
    [Abstract] [Full Text] [Related]

  • 39. Novel poly-silicon nanowire field effect transistor for biosensing application.
    Hsiao CY, Lin CH, Hung CH, Su CJ, Lo YR, Lee CC, Lin HC, Ko FH, Huang TY, Yang YS.
    Biosens Bioelectron; 2009 Jan 01; 24(5):1223-9. PubMed ID: 18760914
    [Abstract] [Full Text] [Related]

  • 40. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
    Yoon A, Hong WK, Lee T.
    J Nanosci Nanotechnol; 2007 Nov 01; 7(11):4101-5. PubMed ID: 18047128
    [Abstract] [Full Text] [Related]

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