These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


PUBMED FOR HANDHELDS

Journal Abstract Search


206 related items for PubMed ID: 22595679

  • 21. Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111).
    Krogstrup P, Popovitz-Biro R, Johnson E, Madsen MH, Nygård J, Shtrikman H.
    Nano Lett; 2010 Nov 10; 10(11):4475-82. PubMed ID: 20932012
    [Abstract] [Full Text] [Related]

  • 22. Interplay between crystal phase purity and radial growth in InP nanowires.
    Poole PJ, Dalacu D, Wu X, Lapointe J, Mnaymneh K.
    Nanotechnology; 2012 Sep 28; 23(38):385205. PubMed ID: 22948129
    [Abstract] [Full Text] [Related]

  • 23. Fabrication of gold nanowires by electric-field-induced scanning probe lithography and in situ chemical development.
    Lee WK, Chen S, Chilkoti A, Zauscher S.
    Small; 2007 Feb 28; 3(2):249-54. PubMed ID: 17199247
    [No Abstract] [Full Text] [Related]

  • 24. Effect of growth orientation and diameter on the elasticity of GaN nanowires. A combined in situ TEM and atomistic modeling investigation.
    Bernal RA, Agrawal R, Peng B, Bertness KA, Sanford NA, Davydov AV, Espinosa HD.
    Nano Lett; 2011 Feb 09; 11(2):548-55. PubMed ID: 21171602
    [Abstract] [Full Text] [Related]

  • 25. Computational studies on hydrogen storage in aluminum nitride nanowires/tubes.
    Li Y, Zhou Z, Shen P, Zhang SB, Chen Z.
    Nanotechnology; 2009 May 27; 20(21):215701. PubMed ID: 19423940
    [Abstract] [Full Text] [Related]

  • 26. Formation of 1D-nanowires and 2D nanophases in heteroepitaxy of Sb on high index Si(5 5 12) surface.
    Kumar M, Govind, Paliwal VK, Vedeshwar AG, Shivaprasad SM.
    J Nanosci Nanotechnol; 2007 Jun 27; 7(6):1841-4. PubMed ID: 17654951
    [Abstract] [Full Text] [Related]

  • 27.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 28. Anisotropic lithiation behavior of crystalline silicon.
    Wagesreither S, Lugstein A, Bertagnolli E.
    Nanotechnology; 2012 Dec 14; 23(49):495716. PubMed ID: 23165459
    [Abstract] [Full Text] [Related]

  • 29. Identification of structural defects in graphitic materials by gas-phase anisotropic etching.
    Wu S, Yang R, Shi D, Zhang G.
    Nanoscale; 2012 Mar 21; 4(6):2005-9. PubMed ID: 22318671
    [Abstract] [Full Text] [Related]

  • 30. Exfoliated nanosheet crystallite of cesium tungstate with 2D pyrochlore structure: synthesis, characterization, and photochromic properties.
    Fukuda K, Akatsuka K, Ebina Y, Ma R, Takada K, Nakai I, Sasaki T.
    ACS Nano; 2008 Aug 21; 2(8):1689-95. PubMed ID: 19206373
    [Abstract] [Full Text] [Related]

  • 31. Self-directed growth of AlGaAs core-shell nanowires for visible light applications.
    Chen C, Shehata S, Fradin C, LaPierre R, Couteau C, Weihs G.
    Nano Lett; 2007 Sep 21; 7(9):2584-9. PubMed ID: 17696557
    [Abstract] [Full Text] [Related]

  • 32.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 33. The microscopic origin of self-organized nanostripe pattern formation on an electropolished aluminium surface.
    Sarkar J, Khan GG, Basumallick A.
    Nanotechnology; 2009 Mar 04; 20(9):095604. PubMed ID: 19417495
    [Abstract] [Full Text] [Related]

  • 34.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 35. Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires.
    Hou WC, Hong FC.
    Nanotechnology; 2009 Feb 04; 20(5):055606. PubMed ID: 19417353
    [Abstract] [Full Text] [Related]

  • 36. Temperature effects on the occurrence of long interatomic distances in atomic chains formed from stretched gold nanowires.
    Lagos MJ, Autreto PA, Legoas SB, Sato F, Rodrigues V, Galvao DS, Ugarte D.
    Nanotechnology; 2011 Mar 04; 22(9):095705. PubMed ID: 21270485
    [Abstract] [Full Text] [Related]

  • 37. Construction of highly ordered lamellar nanostructures through Langmuir-Blodgett deposition of molecularly thin titania nanosheets tens of micrometers wide and their excellent dielectric properties.
    Akatsuka K, Haga MA, Ebina Y, Osada M, Fukuda K, Sasaki T.
    ACS Nano; 2009 May 26; 3(5):1097-106. PubMed ID: 19402657
    [Abstract] [Full Text] [Related]

  • 38. High-throughput dip-pen-nanolithography-based fabrication of Si nanostructures.
    Zhang H, Amro NA, Disawal S, Elghanian R, Shile R, Fragala J.
    Small; 2007 Jan 26; 3(1):81-5. PubMed ID: 17294474
    [No Abstract] [Full Text] [Related]

  • 39. Spatial distribution of defect luminescence in GaN nanowires.
    Li Q, Wang GT.
    Nano Lett; 2010 May 12; 10(5):1554-8. PubMed ID: 20392110
    [Abstract] [Full Text] [Related]

  • 40. Growth morphology and optical properties of ZnO nanostructures on different substrates.
    Panda NR, Sahu D, Mohanty S, Acharya BS.
    J Nanosci Nanotechnol; 2013 Jan 12; 13(1):427-33. PubMed ID: 23646750
    [Abstract] [Full Text] [Related]


    Page: [Previous] [Next] [New Search]
    of 11.