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Journal Abstract Search

538 related items for PubMed ID: 22717421

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  • 5. Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.
    Kriegner D, Wintersberger E, Kawaguchi K, Wallentin J, Borgström MT, Stangl J.
    Nanotechnology; 2011 Oct 21; 22(42):425704. PubMed ID: 21937785
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  • 8. Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate.
    Alouane MH, Anufriev R, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C.
    Nanotechnology; 2011 Oct 07; 22(40):405702. PubMed ID: 21911925
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  • 12. Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires.
    Ji X, Yang X, Du W, Pan H, Yang T.
    Nano Lett; 2016 Dec 14; 16(12):7580-7587. PubMed ID: 27960521
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  • 13. Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires.
    Haas F, Sladek K, Winden A, von der Ahe M, Weirich TE, Rieger T, Lüth H, Grützmacher D, Schäpers T, Hardtdegen H.
    Nanotechnology; 2013 Mar 01; 24(8):085603. PubMed ID: 23385879
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  • 14. A general approach for sharp crystal phase switching in InAs, GaAs, InP, and GaP nanowires using only group V flow.
    Lehmann S, Wallentin J, Jacobsson D, Deppert K, Dick KA.
    Nano Lett; 2013 Sep 11; 13(9):4099-105. PubMed ID: 23902379
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  • 15. InP and InAs nanowires hetero- and homojunctions: energetic stability and electronic properties.
    Dionízio Moreira M, Venezuela P, Miwa RH.
    Nanotechnology; 2010 Jul 16; 21(28):285204. PubMed ID: 20562482
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  • 18. Excitonic properties of wurtzite InP nanowires grown on silicon substrate.
    Hadj Alouane MH, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C.
    Nanotechnology; 2013 Jan 25; 24(3):035704. PubMed ID: 23262659
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