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Journal Abstract Search

327 related items for PubMed ID: 22775468

  • 1. Role of self-assembled monolayer passivation in electrical transport properties and flicker noise of nanowire transistors.
    Kim S, Carpenter PD, Jean RK, Chen H, Zhou C, Ju S, Janes DB.
    ACS Nano; 2012 Aug 28; 6(8):7352-61. PubMed ID: 22775468
    [Abstract] [Full Text] [Related]

  • 2. Role of molecular surface passivation in electrical transport properties of InAs nanowires.
    Hang Q, Wang F, Carpenter PD, Zemlyanov D, Zakharov D, Stach EA, Buhro WE, Janes DB.
    Nano Lett; 2008 Jan 28; 8(1):49-55. PubMed ID: 18052229
    [Abstract] [Full Text] [Related]

  • 3. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.
    Chang YK, Hong FC.
    Nanotechnology; 2009 May 13; 20(19):195302. PubMed ID: 19420638
    [Abstract] [Full Text] [Related]

  • 4. Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements.
    Kim S, Kim H, Janes DB, Ju S.
    Nanotechnology; 2013 Aug 02; 24(30):305201. PubMed ID: 23807306
    [Abstract] [Full Text] [Related]

  • 5. Control of semiconducting and metallic indium oxide nanowires.
    Lim T, Lee S, Meyyappan M, Ju S.
    ACS Nano; 2011 May 24; 5(5):3917-22. PubMed ID: 21504171
    [Abstract] [Full Text] [Related]

  • 6. The effect of excimer laser annealing on ZnO nanowires and their field effect transistors.
    Maeng J, Heo S, Jo G, Choe M, Kim S, Hwang H, Lee T.
    Nanotechnology; 2009 Mar 04; 20(9):095203. PubMed ID: 19417481
    [Abstract] [Full Text] [Related]

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  • 8. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
    Yoon A, Hong WK, Lee T.
    J Nanosci Nanotechnol; 2007 Nov 04; 7(11):4101-5. PubMed ID: 18047128
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  • 10. Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.
    Zou X, Liu X, Wang C, Jiang Y, Wang Y, Xiao X, Ho JC, Li J, Jiang C, Xiong Q, Liao L.
    ACS Nano; 2013 Jan 22; 7(1):804-10. PubMed ID: 23228028
    [Abstract] [Full Text] [Related]

  • 11. Joint mapping of mobility and trap density in colloidal quantum dot solids.
    Stadler P, Sutherland BR, Ren Y, Ning Z, Simchi A, Thon SM, Hoogland S, Sargent EH.
    ACS Nano; 2013 Jul 23; 7(7):5757-62. PubMed ID: 23786265
    [Abstract] [Full Text] [Related]

  • 12. Highly Stable Operation of Metal Oxide Nanowire Transistors in Ambient Humidity, Water, Blood, and Oxygen.
    Lim T, Bong J, Mills EM, Kim S, Ju S.
    ACS Appl Mater Interfaces; 2015 Aug 05; 7(30):16296-302. PubMed ID: 26200320
    [Abstract] [Full Text] [Related]

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  • 14. High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays.
    Chen PC, Shen G, Chen H, Ha YG, Wu C, Sukcharoenchoke S, Fu Y, Liu J, Facchetti A, Marks TJ, Thompson ME, Zhou C.
    ACS Nano; 2009 Nov 24; 3(11):3383-90. PubMed ID: 19842677
    [Abstract] [Full Text] [Related]

  • 15. High performance horizontal gate-all-around silicon nanowire field-effect transistors.
    Shirak O, Shtempluck O, Kotchtakov V, Bahir G, Yaish YE.
    Nanotechnology; 2012 Oct 05; 23(39):395202. PubMed ID: 22971804
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  • 18. Microscopic mechanism of 1/f noise in graphene: role of energy band dispersion.
    Pal AN, Ghatak S, Kochat V, Sneha ES, Sampathkumar A, Raghavan S, Ghosh A.
    ACS Nano; 2011 Mar 22; 5(3):2075-81. PubMed ID: 21332148
    [Abstract] [Full Text] [Related]

  • 19. Gate coupling and charge distribution in nanowire field effect transistors.
    Khanal DR, Wu J.
    Nano Lett; 2007 Sep 22; 7(9):2778-83. PubMed ID: 17718588
    [Abstract] [Full Text] [Related]

  • 20. Self-assembling silicon nanowires for device applications using the nanochannel-guided "grow-in-place" approach.
    Shan Y, Fonash SJ.
    ACS Nano; 2008 Mar 22; 2(3):429-34. PubMed ID: 19206566
    [Abstract] [Full Text] [Related]

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