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PUBMED FOR HANDHELDS

Journal Abstract Search


309 related items for PubMed ID: 22876866

  • 1. Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics.
    Marconcini P, Cresti A, Triozon F, Fiori G, Biel B, Niquet YM, Macucci M, Roche S.
    ACS Nano; 2012 Sep 25; 6(9):7942-7. PubMed ID: 22876866
    [Abstract] [Full Text] [Related]

  • 2. Coplanar-gate transparent graphene transistors and inverters on plastic.
    Kim BJ, Lee SK, Kang MS, Ahn JH, Cho JH.
    ACS Nano; 2012 Oct 23; 6(10):8646-51. PubMed ID: 22954200
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  • 3. Band gap opening of graphene by doping small boron nitride domains.
    Fan X, Shen Z, Liu AQ, Kuo JL.
    Nanoscale; 2012 Mar 21; 4(6):2157-65. PubMed ID: 22344594
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  • 4. n-Type behavior of graphene supported on Si/SiO(2) substrates.
    Romero HE, Shen N, Joshi P, Gutierrez HR, Tadigadapa SA, Sofo JO, Eklund PC.
    ACS Nano; 2008 Oct 28; 2(10):2037-44. PubMed ID: 19206449
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  • 5. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.
    Smith C, Qaisi R, Liu Z, Yu Q, Hussain MM.
    ACS Nano; 2013 Jul 23; 7(7):5818-23. PubMed ID: 23777434
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  • 6. Electrical transport model of Silicene as a channel of field effect transistor.
    Sadeghi H.
    J Nanosci Nanotechnol; 2014 Jun 23; 14(6):4178-84. PubMed ID: 24738367
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  • 11. Electrical detection of metal ions using field-effect transistors based on micropatterned reduced graphene oxide films.
    Sudibya HG, He Q, Zhang H, Chen P.
    ACS Nano; 2011 Mar 22; 5(3):1990-4. PubMed ID: 21338084
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  • 12. The biphenyl molecule as a model transistor.
    Solomon PM, Lang ND.
    ACS Nano; 2008 Mar 22; 2(3):435-40. PubMed ID: 19206567
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  • 16. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory.
    Han SJ, Reddy D, Carpenter GD, Franklin AD, Jenkins KA.
    ACS Nano; 2012 Jun 26; 6(6):5220-6. PubMed ID: 22582702
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  • 17. Engineering electronic properties of graphene by coupling with Si-rich, two-dimensional islands.
    Lee DH, Yi J, Lee JM, Lee SJ, Doh YJ, Jeong HY, Lee Z, Paik U, Rogers JA, Park WI.
    ACS Nano; 2013 Jan 22; 7(1):301-7. PubMed ID: 23234234
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