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Journal Abstract Search

297 related items for PubMed ID: 22889019

  • 1. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.
    Munshi AM, Dheeraj DL, Fauske VT, Kim DC, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2012 Sep 12; 12(9):4570-6. PubMed ID: 22889019
    [Abstract] [Full Text] [Related]

  • 2. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
    Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J.
    Nano Lett; 2007 Apr 12; 7(4):921-6. PubMed ID: 17335270
    [Abstract] [Full Text] [Related]

  • 3. van der Waals epitaxy of InAs nanowires vertically aligned on single-layer graphene.
    Hong YJ, Lee WH, Wu Y, Ruoff RS, Fukui T.
    Nano Lett; 2012 Mar 14; 12(3):1431-6. PubMed ID: 22324301
    [Abstract] [Full Text] [Related]

  • 4. Alignment of semiconductor nanowires using ion beams.
    Borschel C, Niepelt R, Geburt S, Gutsche C, Regolin I, Prost W, Tegude FJ, Stichtenoth D, Schwen D, Ronning C.
    Small; 2009 Nov 14; 5(22):2576-80. PubMed ID: 19714732
    [Abstract] [Full Text] [Related]

  • 5. Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.
    Verheijen MA, Algra RE, Borgström MT, Immink G, Sourty E, Enckevort WJ, Vlieg E, Bakkers EP.
    Nano Lett; 2007 Oct 14; 7(10):3051-5. PubMed ID: 17887714
    [Abstract] [Full Text] [Related]

  • 6. Stacking-faults-free zinc Blende GaAs nanowires.
    Shtrikman H, Popovitz-Biro R, Kretinin A, Heiblum M.
    Nano Lett; 2009 Jan 14; 9(1):215-9. PubMed ID: 19093840
    [Abstract] [Full Text] [Related]

  • 7. Manganese-induced growth of GaAs nanowires.
    Martelli F, Rubini S, Piccin M, Bais G, Jabeen F, De Franceschi S, Grillo V, Carlino E, D'Acapito F, Boscherini F, Cabrini S, Lazzarino M, Businaro L, Romanato F, Franciosi A.
    Nano Lett; 2006 Sep 14; 6(9):2130-4. PubMed ID: 16968038
    [Abstract] [Full Text] [Related]

  • 8. Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.
    Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE.
    Nano Lett; 2008 Jun 14; 8(6):1638-43. PubMed ID: 18471022
    [Abstract] [Full Text] [Related]

  • 9. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.
    Yu X, Wang H, Pan D, Zhao J, Misuraca J, von Molnár S, Xiong P.
    Nano Lett; 2013 Apr 10; 13(4):1572-7. PubMed ID: 23517546
    [Abstract] [Full Text] [Related]

  • 10. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M, Zou J, Guo YN, Auchterlonie GJ, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y.
    Small; 2007 Nov 10; 3(11):1873-7. PubMed ID: 17935062
    [No Abstract] [Full Text] [Related]

  • 11. GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)as at MnAs segregation conditions.
    Sadowski J, Dłuzewski P, Kret S, Janik E, Lusakowska E, Kanski J, Presz A, Terki F, Charar S, Tang D.
    Nano Lett; 2007 Sep 10; 7(9):2724-8. PubMed ID: 17718585
    [Abstract] [Full Text] [Related]

  • 12. Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111).
    Krogstrup P, Popovitz-Biro R, Johnson E, Madsen MH, Nygård J, Shtrikman H.
    Nano Lett; 2010 Nov 10; 10(11):4475-82. PubMed ID: 20932012
    [Abstract] [Full Text] [Related]

  • 13. Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.
    Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C, Paladugu M, Zou J, Suvorova AA.
    Nano Lett; 2006 Apr 10; 6(4):599-604. PubMed ID: 16608251
    [Abstract] [Full Text] [Related]

  • 14. Growth of silver nanowires on GaAs wafers.
    Sun Y.
    Nanoscale; 2011 May 10; 3(5):2247-55. PubMed ID: 21483977
    [Abstract] [Full Text] [Related]

  • 15. Tailoring the vapor-liquid-solid growth toward the self-assembly of GaAs nanowire junctions.
    Dai X, Dayeh SA, Veeramuthu V, Larrue A, Wang J, Su H, Soci C.
    Nano Lett; 2011 Nov 09; 11(11):4947-52. PubMed ID: 21967168
    [Abstract] [Full Text] [Related]

  • 16. Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates.
    Yang WQ, Dai L, You LP, Zhang BR, Shen B, Qin GG.
    J Nanosci Nanotechnol; 2006 Dec 09; 6(12):3780-3. PubMed ID: 17256330
    [Abstract] [Full Text] [Related]

  • 17. Growth mechanism of truncated triangular III-V nanowires.
    Zou J, Paladugu M, Wang H, Auchterlonie GJ, Guo YN, Kim Y, Gao Q, Joyce HJ, Tan HH, Jagadish C.
    Small; 2007 Mar 09; 3(3):389-93. PubMed ID: 17285644
    [No Abstract] [Full Text] [Related]

  • 18. Single GaAs/GaAsP coaxial core-shell nanowire lasers.
    Hua B, Motohisa J, Kobayashi Y, Hara S, Fukui T.
    Nano Lett; 2009 Jan 09; 9(1):112-6. PubMed ID: 19072060
    [Abstract] [Full Text] [Related]

  • 19. Gallium phosphide nanowires as a substrate for cultured neurons.
    Hällström W, Mårtensson T, Prinz C, Gustavsson P, Montelius L, Samuelson L, Kanje M.
    Nano Lett; 2007 Oct 09; 7(10):2960-5. PubMed ID: 17880143
    [Abstract] [Full Text] [Related]

  • 20. P-doping mechanisms in catalyst-free gallium arsenide nanowires.
    Dufouleur J, Colombo C, Garma T, Ketterer B, Uccelli E, Nicotra M, Fontcuberta i Morral A.
    Nano Lett; 2010 May 12; 10(5):1734-40. PubMed ID: 20373777
    [Abstract] [Full Text] [Related]

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