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Journal Abstract Search

164 related items for PubMed ID: 22889241

  • 1. Electrical and optical characterization of surface passivation in GaAs nanowires.
    Chang CC, Chi CY, Yao M, Huang N, Chen CC, Theiss J, Bushmaker AW, Lalumondiere S, Yeh TW, Povinelli ML, Zhou C, Dapkus PD, Cronin SB.
    Nano Lett; 2012 Sep 12; 12(9):4484-9. PubMed ID: 22889241
    [Abstract] [Full Text] [Related]

  • 2. Manganese-induced growth of GaAs nanowires.
    Martelli F, Rubini S, Piccin M, Bais G, Jabeen F, De Franceschi S, Grillo V, Carlino E, D'Acapito F, Boscherini F, Cabrini S, Lazzarino M, Businaro L, Romanato F, Franciosi A.
    Nano Lett; 2006 Sep 12; 6(9):2130-4. PubMed ID: 16968038
    [Abstract] [Full Text] [Related]

  • 3. Stacking-faults-free zinc Blende GaAs nanowires.
    Shtrikman H, Popovitz-Biro R, Kretinin A, Heiblum M.
    Nano Lett; 2009 Jan 12; 9(1):215-9. PubMed ID: 19093840
    [Abstract] [Full Text] [Related]

  • 4. Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.
    Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C, Paladugu M, Zou J, Suvorova AA.
    Nano Lett; 2006 Apr 12; 6(4):599-604. PubMed ID: 16608251
    [Abstract] [Full Text] [Related]

  • 5. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
    Joyce HJ, Docherty CJ, Gao Q, Tan HH, Jagadish C, Lloyd-Hughes J, Herz LM, Johnston MB.
    Nanotechnology; 2013 May 31; 24(21):214006. PubMed ID: 23619012
    [Abstract] [Full Text] [Related]

  • 6. Effects of surface passivation on twin-free GaAs nanosheets.
    Arab S, Chi CY, Shi T, Wang Y, Dapkus DP, Jackson HE, Smith LM, Cronin SB.
    ACS Nano; 2015 Feb 24; 9(2):1336-40. PubMed ID: 25565000
    [Abstract] [Full Text] [Related]

  • 7. Wurtzite to zinc blende phase transition in GaAs nanowires induced by epitaxial burying.
    Patriarche G, Glas F, Tchernycheva M, Sartel C, Largeau L, Harmand JC, Cirlin GE.
    Nano Lett; 2008 Jun 24; 8(6):1638-43. PubMed ID: 18471022
    [Abstract] [Full Text] [Related]

  • 8. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process.
    Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y, Zhang X, Guo Y, Zou J.
    Nano Lett; 2007 Apr 24; 7(4):921-6. PubMed ID: 17335270
    [Abstract] [Full Text] [Related]

  • 9. Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.
    Parkinson P, Joyce HJ, Gao Q, Tan HH, Zhang X, Zou J, Jagadish C, Herz LM, Johnston MB.
    Nano Lett; 2009 Sep 24; 9(9):3349-53. PubMed ID: 19736975
    [Abstract] [Full Text] [Related]

  • 10. Three-dimensional in situ photocurrent mapping for nanowire photovoltaics.
    Parkinson P, Lee YH, Fu L, Breuer S, Tan HH, Jagadish C.
    Nano Lett; 2013 Apr 10; 13(4):1405-9. PubMed ID: 23464357
    [Abstract] [Full Text] [Related]

  • 11. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.
    Munshi AM, Dheeraj DL, Fauske VT, Kim DC, van Helvoort AT, Fimland BO, Weman H.
    Nano Lett; 2012 Sep 12; 12(9):4570-6. PubMed ID: 22889019
    [Abstract] [Full Text] [Related]

  • 12. Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.
    Parkinson P, Dodson C, Joyce HJ, Bertness KA, Sanford NA, Herz LM, Johnston MB.
    Nano Lett; 2012 Sep 12; 12(9):4600-4. PubMed ID: 22924866
    [Abstract] [Full Text] [Related]

  • 13. Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions.
    Gutsche C, Niepelt R, Gnauck M, Lysov A, Prost W, Ronning C, Tegude FJ.
    Nano Lett; 2012 Mar 14; 12(3):1453-8. PubMed ID: 22364406
    [Abstract] [Full Text] [Related]

  • 14. Effects of gold diffusion on n-type doping of GaAs nanowires.
    Tambe MJ, Ren S, Gradecak S.
    Nano Lett; 2010 Nov 10; 10(11):4584-9. PubMed ID: 20939583
    [Abstract] [Full Text] [Related]

  • 15. Heterojunction photovoltaics using GaAs nanowires and conjugated polymers.
    Ren S, Zhao N, Crawford SC, Tambe M, Bulović V, Gradecak S.
    Nano Lett; 2011 Feb 09; 11(2):408-13. PubMed ID: 21171629
    [Abstract] [Full Text] [Related]

  • 16. Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility.
    Boland JL, Conesa-Boj S, Parkinson P, Tütüncüoglu G, Matteini F, Rüffer D, Casadei A, Amaduzzi F, Jabeen F, Davies CL, Joyce HJ, Herz LM, Fontcuberta i Morral A, Johnston MB.
    Nano Lett; 2015 Feb 11; 15(2):1336-42. PubMed ID: 25602841
    [Abstract] [Full Text] [Related]

  • 17. Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.
    Verheijen MA, Algra RE, Borgström MT, Immink G, Sourty E, Enckevort WJ, Vlieg E, Bakkers EP.
    Nano Lett; 2007 Oct 11; 7(10):3051-5. PubMed ID: 17887714
    [Abstract] [Full Text] [Related]

  • 18. Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
    Paladugu M, Zou J, Guo YN, Auchterlonie GJ, Joyce HJ, Gao Q, Tan HH, Jagadish C, Kim Y.
    Small; 2007 Nov 11; 3(11):1873-7. PubMed ID: 17935062
    [No Abstract] [Full Text] [Related]

  • 19. Growth mechanism of truncated triangular III-V nanowires.
    Zou J, Paladugu M, Wang H, Auchterlonie GJ, Guo YN, Kim Y, Gao Q, Joyce HJ, Tan HH, Jagadish C.
    Small; 2007 Mar 11; 3(3):389-93. PubMed ID: 17285644
    [No Abstract] [Full Text] [Related]

  • 20. Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure.
    Yang L, Motohisa J, Fukui T, Jia LX, Zhang L, Geng MM, Chen P, Liu YL.
    Opt Express; 2009 May 25; 17(11):9337-46. PubMed ID: 19466186
    [Abstract] [Full Text] [Related]

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