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262 related items for PubMed ID: 22966563

  • 1. Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology.
    Sun MC, Kim G, Kim SW, Kim HW, Kim H, Lee JH, Shin H, Park BG.
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5313-7. PubMed ID: 22966563
    [Abstract] [Full Text] [Related]

  • 2. Few electron limit of n-type metal oxide semiconductor single electron transistors.
    Prati E, De Michielis M, Belli M, Cocco S, Fanciulli M, Kotekar-Patil D, Ruoff M, Kern DP, Wharam DA, Verduijn J, Tettamanzi GC, Rogge S, Roche B, Wacquez R, Jehl X, Vinet M, Sanquer M.
    Nanotechnology; 2012 Jun 01; 23(21):215204. PubMed ID: 22552118
    [Abstract] [Full Text] [Related]

  • 3. Training and operation of an integrated neuromorphic network based on metal-oxide memristors.
    Prezioso M, Merrikh-Bayat F, Hoskins BD, Adam GC, Likharev KK, Strukov DB.
    Nature; 2015 May 07; 521(7550):61-4. PubMed ID: 25951284
    [Abstract] [Full Text] [Related]

  • 4. Nanolasers grown on silicon-based MOSFETs.
    Lu F, Tran TT, Ko WS, Ng KW, Chen R, Chang-Hasnain C.
    Opt Express; 2012 May 21; 20(11):12171-6. PubMed ID: 22714204
    [Abstract] [Full Text] [Related]

  • 5. 2007 IEEE Device Research Conference: Tour de Force Multigate and Nanowire Metal Oxide Semiconductor Field-Effect Transistors and Their Application.
    Zhang P, Mayer TS, Jackson TN.
    ACS Nano; 2007 Aug 21; 1(1):6-9. PubMed ID: 19203124
    [Abstract] [Full Text] [Related]

  • 6. Reconfigurable silicon nanowire transistors.
    Heinzig A, Slesazeck S, Kreupl F, Mikolajick T, Weber WM.
    Nano Lett; 2012 Jan 11; 12(1):119-24. PubMed ID: 22111808
    [Abstract] [Full Text] [Related]

  • 7. Fabrication of poly-silicon nano-wire transistors on plastic substrates.
    Park C, Lee S, Choi M, Kang M, Jung Y, Hwang S, Ahn D, Lee J, Song C.
    J Nanosci Nanotechnol; 2007 Nov 11; 7(11):4150-3. PubMed ID: 18047139
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  • 8. The large-scale integration of high-performance silicon nanowire field effect transistors.
    Li Q, Zhu X, Yang Y, Ioannou DE, Xiong HD, Kwon DW, Suehle JS, Richter CA.
    Nanotechnology; 2009 Oct 14; 20(41):415202. PubMed ID: 19755723
    [Abstract] [Full Text] [Related]

  • 9. Metal-insulator-silicon-insulator-metal waveguides compatible with standard CMOS technology.
    Kwon MS.
    Opt Express; 2011 Apr 25; 19(9):8379-93. PubMed ID: 21643089
    [Abstract] [Full Text] [Related]

  • 10. Integrated circuits and logic operations based on single-layer MoS2.
    Radisavljevic B, Whitwick MB, Kis A.
    ACS Nano; 2011 Dec 27; 5(12):9934-8. PubMed ID: 22073905
    [Abstract] [Full Text] [Related]

  • 11. Subnanowatt carbon nanotube complementary logic enabled by threshold voltage control.
    Geier ML, Prabhumirashi PL, McMorrow JJ, Xu W, Seo JW, Everaerts K, Kim CH, Marks TJ, Hersam MC.
    Nano Lett; 2013 Oct 09; 13(10):4810-4. PubMed ID: 24020970
    [Abstract] [Full Text] [Related]

  • 12. CMOS-based carbon nanotube pass-transistor logic integrated circuits.
    Ding L, Zhang Z, Liang S, Pei T, Wang S, Li Y, Zhou W, Liu J, Peng LM.
    Nat Commun; 2012 Feb 14; 3():677. PubMed ID: 22334080
    [Abstract] [Full Text] [Related]

  • 13. Metal-oxide-semiconductor field-effect transistor with a vacuum channel.
    Srisonphan S, Jung YS, Kim HK.
    Nat Nanotechnol; 2012 Aug 14; 7(8):504-8. PubMed ID: 22751220
    [Abstract] [Full Text] [Related]

  • 14. High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.
    Yu L, Zubair A, Santos EJ, Zhang X, Lin Y, Zhang Y, Palacios T.
    Nano Lett; 2015 Aug 12; 15(8):4928-34. PubMed ID: 26192468
    [Abstract] [Full Text] [Related]

  • 15. New adders using hybrid circuit consisting of three-gate single-electron transistors (TG-SETs) and MOSFETs.
    Yu Y, Choi J.
    J Nanosci Nanotechnol; 2007 Nov 12; 7(11):4120-5. PubMed ID: 18047132
    [Abstract] [Full Text] [Related]

  • 16. CMOS compatible horizontal nanoplasmonic slot waveguides TE-pass polarizer on silicon-on-insulator platform.
    Huang Y, Zhu S, Zhang H, Liow TY, Lo GQ.
    Opt Express; 2013 May 20; 21(10):12790-6. PubMed ID: 23736497
    [Abstract] [Full Text] [Related]

  • 17. Full recess integration of small diameter low threshold VCSELs within Si-CMOS ICs.
    Perkins JM, Simpkins TL, Warde C, Fonstad CG.
    Opt Express; 2008 Sep 01; 16(18):13955-60. PubMed ID: 18773006
    [Abstract] [Full Text] [Related]

  • 18. Issues of nanoelectronics: a possible roadmap.
    Wang KL.
    J Nanosci Nanotechnol; 2002 Sep 01; 2(3-4):235-66. PubMed ID: 12908252
    [Abstract] [Full Text] [Related]

  • 19. Large current MOSFET on photonic silicon-on-insulator wafers and its monolithic integration with a thermo-optic 2 × 2 Mach-Zehnder switch.
    Cong GW, Matsukawa T, Chiba T, Tadokoro H, Yanagihara M, Ohno M, Kawashima H, Kuwatsuka H, Igarashi Y, Masahara M, Ishikawa H.
    Opt Express; 2013 Mar 25; 21(6):6889-94. PubMed ID: 23546071
    [Abstract] [Full Text] [Related]

  • 20. Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.
    Feng C, Yi M, Yu S, Hümmelgen IA, Zhang T, Ma D.
    J Nanosci Nanotechnol; 2008 Apr 25; 8(4):2037-43. PubMed ID: 18572611
    [Abstract] [Full Text] [Related]

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