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Journal Abstract Search

328 related items for PubMed ID: 22984828

  • 1. Evidence for structural phase transitions induced by the triple phase line shift in self-catalyzed GaAs nanowires.
    Yu X, Wang H, Lu J, Zhao J, Misuraca J, Xiong P, von Molnár S.
    Nano Lett; 2012 Oct 10; 12(10):5436-42. PubMed ID: 22984828
    [Abstract] [Full Text] [Related]

  • 2. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.
    Yu X, Wang H, Pan D, Zhao J, Misuraca J, von Molnár S, Xiong P.
    Nano Lett; 2013 Apr 10; 13(4):1572-7. PubMed ID: 23517546
    [Abstract] [Full Text] [Related]

  • 3. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy.
    Wang CY, Hong YC, Ko ZJ, Su YW, Huang JH.
    Nanoscale Res Lett; 2017 Dec 10; 12(1):290. PubMed ID: 28438011
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  • 5. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy.
    Yu X, Li L, Wang H, Xiao J, Shen C, Pan D, Zhao J.
    Nanoscale; 2016 May 19; 8(20):10615-21. PubMed ID: 27194599
    [Abstract] [Full Text] [Related]

  • 6. Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy.
    Dursap T, Vettori M, Botella C, Regreny P, Blanchard N, Gendry M, Chauvin N, Bugnet M, Danescu A, Penuelas J.
    Nanotechnology; 2021 Apr 09; 32(15):155602. PubMed ID: 33429384
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  • 8. Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.
    André Y, Lekhal K, Hoggan P, Avit G, Cadiz F, Rowe A, Paget D, Petit E, Leroux C, Trassoudaine A, Ramdani MR, Monier G, Colas D, Ajib R, Castelluci D, Gil E.
    J Chem Phys; 2014 May 21; 140(19):194706. PubMed ID: 24852556
    [Abstract] [Full Text] [Related]

  • 9. Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires.
    Sadowski J, Kaleta A, Kryvyi S, Janaszko D, Kurowska B, Bilska M, Wojciechowski T, Domagala JZ, Sanchez AM, Kret S.
    Sci Rep; 2022 Apr 09; 12(1):6007. PubMed ID: 35397635
    [Abstract] [Full Text] [Related]

  • 10. Microstructural evolution in self-catalyzed GaAs nanowires during in-situ TEM study.
    Gang GW, Lee JH, Kim SY, Jeong T, Bin Kim K, Thi Hong Men N, Kim YR, Ahn SJ, Kim CS, Kim YH.
    Nanotechnology; 2021 Apr 02; 32(14):145709. PubMed ID: 33326944
    [Abstract] [Full Text] [Related]

  • 11. Crystal phase engineering of self-catalyzed GaAs nanowires using a RHEED diagram.
    Dursap T, Vettori M, Danescu A, Botella C, Regreny P, Patriarche G, Gendry M, Penuelas J.
    Nanoscale Adv; 2020 May 19; 2(5):2127-2134. PubMed ID: 36132505
    [Abstract] [Full Text] [Related]

  • 12. Doping of Self-Catalyzed Nanowires under the Influence of Droplets.
    Zhang Y, Sun Z, Sanchez AM, Ramsteiner M, Aagesen M, Wu J, Kim D, Jurczak P, Huo S, Lauhon LJ, Liu H.
    Nano Lett; 2018 Jan 10; 18(1):81-87. PubMed ID: 29206466
    [Abstract] [Full Text] [Related]

  • 13. Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
    Glas F, Harmand JC, Patriarche G.
    Phys Rev Lett; 2007 Oct 05; 99(14):146101. PubMed ID: 17930689
    [Abstract] [Full Text] [Related]

  • 14. Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy.
    Zhang Y, Aagesen M, Holm JV, Jørgensen HI, Wu J, Liu H.
    Nano Lett; 2013 Aug 14; 13(8):3897-902. PubMed ID: 23899047
    [Abstract] [Full Text] [Related]

  • 15. Crystal phase control in GaAs nanowires: opposing trends in the Ga- and As-limited growth regimes.
    Lehmann S, Jacobsson D, Dick KA.
    Nanotechnology; 2015 Jul 31; 26(30):301001. PubMed ID: 26160888
    [Abstract] [Full Text] [Related]

  • 16. Formation Mechanism of Twinning Superlattices in Doped GaAs Nanowires.
    Isik Goktas N, Sokolovskii A, Dubrovskii VG, LaPierre RR.
    Nano Lett; 2020 May 13; 20(5):3344-3351. PubMed ID: 32239956
    [Abstract] [Full Text] [Related]

  • 17. Mechanism of self-assembled growth of ordered GaAs nanowire arrays by metalorganic vapor phase epitaxy on GaAs vicinal substrates.
    Mohan P, Bag R, Singh S, Kumar A, Tyagi R.
    Nanotechnology; 2012 Jan 20; 23(2):025601. PubMed ID: 22166369
    [Abstract] [Full Text] [Related]

  • 18. A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.
    García Núñez C, Braña AF, López N, García BJ.
    Nano Lett; 2018 Jun 13; 18(6):3608-3615. PubMed ID: 29739187
    [Abstract] [Full Text] [Related]

  • 19. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.
    Dheeraj DL, Munshi AM, Scheffler M, van Helvoort AT, Weman H, Fimland BO.
    Nanotechnology; 2013 Jan 11; 24(1):015601. PubMed ID: 23220972
    [Abstract] [Full Text] [Related]

  • 20. Simultaneous Growth of Pure Wurtzite and Zinc Blende Nanowires.
    Lehmann S, Wallentin J, Mårtensson EK, Ek M, Deppert K, Dick KA, Borgström MT.
    Nano Lett; 2019 Apr 10; 19(4):2723-2730. PubMed ID: 30888174
    [Abstract] [Full Text] [Related]

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