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Journal Abstract Search

826 related items for PubMed ID: 23003071

  • 21. Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with Broken Inversion Symmetry.
    Song Z, Quhe R, Liu S, Li Y, Feng J, Yang Y, Lu J, Yang J.
    Sci Rep; 2015 Sep 11; 5():13906. PubMed ID: 26358835
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  • 22. On the electronic and spin-valley coupling of vanadium doped MoS2(1-x)Se2xmonolayers.
    Maity D, Sharma R, Sahoo KR, Panda JJ, Lal A, Puthirath AB, Ajayan PM, Narayanan TN.
    J Phys Condens Matter; 2023 Sep 22; 35(50):. PubMed ID: 37708898
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  • 23. Intrinsic valley polarization of magnetic VSe2 monolayers.
    Liu J, Hou WJ, Cheng C, Fu HX, Sun JT, Meng S.
    J Phys Condens Matter; 2017 Jun 28; 29(25):255501. PubMed ID: 28516897
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  • 24. Indirect-To-Direct Bandgap Crossover and Room-Temperature Valley Polarization of Multilayer MoS2 Achieved by Electrochemical Intercalation.
    Jo MK, Lee E, Moon E, Jang BG, Kim J, Dhakal KP, Oh S, Cho SR, Hasanah N, Yang S, Jeong HY, Kim J, Kang K, Song S.
    Adv Mater; 2024 Nov 28; 36(47):e2407997. PubMed ID: 39370590
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  • 25. Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2.
    Jiang C, Liu F, Cuadra J, Huang Z, Li K, Rasmita A, Srivastava A, Liu Z, Gao WB.
    Nat Commun; 2017 Oct 06; 8(1):802. PubMed ID: 28986559
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  • 27. Transition metal chalcogenides: ultrathin inorganic materials with tunable electronic properties.
    Heine T.
    Acc Chem Res; 2015 Jan 20; 48(1):65-72. PubMed ID: 25489917
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  • 30. Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction.
    Sanchez OL, Ovchinnikov D, Misra S, Allain A, Kis A.
    Nano Lett; 2016 Sep 14; 16(9):5792-7. PubMed ID: 27575518
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  • 31. Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure.
    Li F, Zhang H, Li Y, Zhao Y, Liu M, Yang Y, Yao J, Min S, Kan E, Wan Y.
    Nanomaterials (Basel); 2023 Feb 25; 13(5):. PubMed ID: 36903739
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  • 32. Spin/Valley Coupled Dynamics of Electrons and Holes at the MoS2-MoSe2 Interface.
    Kumar A, Yagodkin D, Stetzuhn N, Kovalchuk S, Melnikov A, Elliott P, Sharma S, Gahl C, Bolotin KI.
    Nano Lett; 2021 Sep 08; 21(17):7123-7130. PubMed ID: 34410727
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  • 37. Conduction band-edge valley splitting in two-dimensional ferroelectric AgBiP2S6 by magnetic doping: towards electron valley-polarized transport.
    Zhang D, Zhou B.
    RSC Adv; 2022 May 05; 12(22):13765-13773. PubMed ID: 35530381
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  • 38. Ferroelectric Rashba semiconductors, AgBiP2X6 (X = S, Se and Te), with valley polarization: an avenue towards electric and nonvolatile control of spintronic devices.
    Zhou B.
    Nanoscale; 2020 Mar 05; 12(9):5533-5542. PubMed ID: 32091050
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  • 40. Quantum Spin-Quantum Anomalous Hall Insulators and Topological Transitions in Functionalized Sb(111) Monolayers.
    Zhou T, Zhang J, Zhao B, Zhang H, Yang Z.
    Nano Lett; 2015 Aug 12; 15(8):5149-55. PubMed ID: 26171845
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