These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

117 related items for PubMed ID: 23086234

  • 1. Hierarchical structures consisting of SiO2 nanorods and p-GaN microdomes for efficiently harvesting solar energy for InGaN quantum well photovoltaic cells.
    Ho CH, Lien DH, Chang HC, Lin CA, Kang CF, Hsing MK, Lai KY, He JH.
    Nanoscale; 2012 Dec 07; 4(23):7346-9. PubMed ID: 23086234
    [Abstract] [Full Text] [Related]

  • 2. Enhanced performance of InGaN/GaN based solar cells with an In(0.05)Ga(0.95)N ultra-thin inserting layer between GaN barrier and In(0.2)Ga(0.8)N well.
    Ren Z, Chao L, Chen X, Zhao B, Wang X, Tong J, Zhang J, Zhuo X, Li D, Yi H, Li S.
    Opt Express; 2013 Mar 25; 21(6):7118-24. PubMed ID: 23546093
    [Abstract] [Full Text] [Related]

  • 3. InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays.
    Yeh TW, Lin YT, Stewart LS, Dapkus PD, Sarkissian R, O'Brien JD, Ahn B, Nutt SR.
    Nano Lett; 2012 Jun 13; 12(6):3257-62. PubMed ID: 22587013
    [Abstract] [Full Text] [Related]

  • 4.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 5.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 6.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 7. Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.
    Jang LW, Ju JW, Jeon DW, Park JW, Polyakov AY, Lee SJ, Baek JH, Lee SM, Cho YH, Lee IH.
    Opt Express; 2012 Mar 12; 20(6):6036-41. PubMed ID: 22418481
    [Abstract] [Full Text] [Related]

  • 8. Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays.
    Hong CC, Ahn H, Wu CY, Gwo S.
    Opt Express; 2009 Sep 28; 17(20):17227-33. PubMed ID: 19907509
    [Abstract] [Full Text] [Related]

  • 9. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.
    Park H, Baik KH, Kim J, Ren F, Pearton SJ.
    Opt Express; 2013 May 20; 21(10):12908-13. PubMed ID: 23736510
    [Abstract] [Full Text] [Related]

  • 10. Distance dependence of energy transfer from InGaN quantum wells to graphene oxide.
    Lin TN, Huang LT, Shu GW, Yuan CT, Shen JL, Lin CA, Chang WH, Chiu CH, Lin DW, Lin CC, Kuo HC.
    Opt Lett; 2013 Aug 01; 38(15):2897-9. PubMed ID: 23903173
    [Abstract] [Full Text] [Related]

  • 11. Solar energy harvesting scheme using syringe-like ZnO nanorod arrays for InGaN/GaN multiple quantum well solar cells.
    Lin GJ, Lai KY, Lin CA, He JH.
    Opt Lett; 2012 Jan 01; 37(1):61-3. PubMed ID: 22212791
    [Abstract] [Full Text] [Related]

  • 12. Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111).
    Cardin V, Dion-Bertrand LI, Grégoire P, Nguyen HP, Sakowicz M, Mi Z, Silva C, Leonelli R.
    Nanotechnology; 2013 Feb 01; 24(4):045702. PubMed ID: 23299780
    [Abstract] [Full Text] [Related]

  • 13. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.
    Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.
    Opt Express; 2014 Jan 13; 22(1):809-16. PubMed ID: 24515040
    [Abstract] [Full Text] [Related]

  • 14. Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.
    Park YJ, Kim HY, Ryu JH, Kim HK, Kang JH, Han N, Han M, Jeong H, Jeong MS, Hong CH.
    Opt Express; 2011 Jan 31; 19(3):2029-36. PubMed ID: 21369019
    [Abstract] [Full Text] [Related]

  • 15. Strong enhancement of solar cell efficiency due to quantum dots with built-in charge.
    Sablon KA, Little JW, Mitin V, Sergeev A, Vagidov N, Reinhardt K.
    Nano Lett; 2011 Jun 08; 11(6):2311-7. PubMed ID: 21545165
    [Abstract] [Full Text] [Related]

  • 16. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.
    Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.
    Opt Express; 2011 Jan 17; 19(2):1065-71. PubMed ID: 21263645
    [Abstract] [Full Text] [Related]

  • 17. Si/InGaN core/shell hierarchical nanowire arrays and their photoelectrochemical properties.
    Hwang YJ, Wu CH, Hahn C, Jeong HE, Yang P.
    Nano Lett; 2012 Mar 14; 12(3):1678-82. PubMed ID: 22369381
    [Abstract] [Full Text] [Related]

  • 18. High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.
    Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.
    Opt Express; 2012 Apr 23; 20(9):9999-10003. PubMed ID: 22535092
    [Abstract] [Full Text] [Related]

  • 19. Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.
    Jia C, Yu T, Lu H, Zhong C, Sun Y, Tong Y, Zhang G.
    Opt Express; 2013 Apr 08; 21(7):8444-9. PubMed ID: 23571934
    [Abstract] [Full Text] [Related]

  • 20. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.
    Zhang ZH, Tan ST, Liu W, Ju Z, Zheng K, Kyaw Z, Ji Y, Hasanov N, Sun XW, Demir HV.
    Opt Express; 2013 Feb 25; 21(4):4958-69. PubMed ID: 23482028
    [Abstract] [Full Text] [Related]

    Page: [Next] [New Search]
    of 6.