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Journal Abstract Search

179 related items for PubMed ID: 23364424

  • 1. Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications.
    Zhu LQ, Sun J, Wu GD, Zhang HL, Wan Q.
    Nanoscale; 2013 Mar 07; 5(5):1980-5. PubMed ID: 23364424
    [Abstract] [Full Text] [Related]

  • 2. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.
    Liu J, Buchholz DB, Hennek JW, Chang RP, Facchetti A, Marks TJ.
    J Am Chem Soc; 2010 Sep 01; 132(34):11934-42. PubMed ID: 20698566
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  • 4. Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer.
    Cai W, Ma X, Zhang J, Song A.
    Materials (Basel); 2017 Apr 20; 10(4):. PubMed ID: 28772789
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  • 5. Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.
    Wan CJ, Zhu LQ, Zhou JM, Shi Y, Wan Q.
    Nanoscale; 2014 May 07; 6(9):4491-7. PubMed ID: 24643320
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  • 6. High-mobility transparent thin-film transistors with an Sb-doped SnO2 nanocrystal channel fabricated at room temperature.
    Sun J, Lu A, Wang L, Hu Y, Wan Q.
    Nanotechnology; 2009 Aug 19; 20(33):335204. PubMed ID: 19636097
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  • 7. Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function.
    Gan X, Dou W, Hou W, Yuan X, Lei L, Zhou Y, Yang J, Chen D, Zhou W, Tang D.
    Nanomaterials (Basel); 2023 Aug 15; 13(16):. PubMed ID: 37630930
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  • 8. Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors.
    Kang YH, Min BK, Kim SK, Bae G, Song W, Lee C, Cho SY, An KS.
    ACS Appl Mater Interfaces; 2020 Apr 01; 12(13):15396-15405. PubMed ID: 32148019
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  • 9. Flexible logic circuits composed of chalcogenide-nanocrystal-based thin film transistors.
    Yun J, Cho K, Kim S.
    Nanotechnology; 2010 Jun 11; 21(23):235204. PubMed ID: 20472946
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  • 14. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.
    Je SY, Son BG, Kim HG, Park MY, Do LM, Choi R, Jeong JK.
    ACS Appl Mater Interfaces; 2014 Nov 12; 6(21):18693-703. PubMed ID: 25285585
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  • 15. High-performance transparent inorganic-organic hybrid thin-film n-type transistors.
    Wang L, Yoon MH, Lu G, Yang Y, Facchetti A, Marks TJ.
    Nat Mater; 2006 Nov 12; 5(11):893-900. PubMed ID: 17041583
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  • 16. Low-Temperature and Solution-Processable Zinc Oxide Transistors for Transparent Electronics.
    Jiang L, Li J, Huang K, Li S, Wang Q, Sun Z, Mei T, Wang J, Zhang L, Wang N, Wang X.
    ACS Omega; 2017 Dec 31; 2(12):8990-8996. PubMed ID: 31457423
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  • 18. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.
    Jaehnike F, Pham DV, Anselmann R, Bock C, Kunze U.
    ACS Appl Mater Interfaces; 2015 Jul 01; 7(25):14011-7. PubMed ID: 26039187
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  • 19. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.
    Everaerts K, Zeng L, Hennek JW, Camacho DI, Jariwala D, Bedzyk MJ, Hersam MC, Marks TJ.
    ACS Appl Mater Interfaces; 2013 Nov 27; 5(22):11884-93. PubMed ID: 24187917
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  • 20. Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors.
    Wan CJ, Zhu LQ, Zhou JM, Shi Y, Wan Q.
    Nanoscale; 2013 Nov 07; 5(21):10194-9. PubMed ID: 24056993
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