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255 related items for PubMed ID: 23464836

  • 1. Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire.
    Yu Y, Li MF, He JF, He YM, Wei YJ, He Y, Zha GW, Shang XJ, Wang J, Wang LJ, Wang GW, Ni HQ, Lu CY, Niu ZC.
    Nano Lett; 2013 Apr 10; 13(4):1399-404. PubMed ID: 23464836
    [Abstract] [Full Text] [Related]

  • 2. Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.
    Tanabe K, Nomura M, Guimard D, Iwamoto S, Arakawa Y.
    Opt Express; 2009 Apr 27; 17(9):7036-42. PubMed ID: 19399078
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  • 3. Effect of temperature on the growth of InAs/GaAs quantum dots grown on a strained GaAs layer.
    Ahmad I, Avrutin V, Morkoç H, Moore JC, Baski AA.
    J Nanosci Nanotechnol; 2007 Aug 27; 7(8):2889-93. PubMed ID: 17685312
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  • 12. InAs quantum dots capped by GaAs, In0.4Ga0.6As dots, and In0.2Ga0.8As well.
    Fu Y, Wang SM, Ferdos F, Sadeghi M, Larsson A.
    J Nanosci Nanotechnol; 2002 Aug 27; 2(3-4):421-6. PubMed ID: 12908273
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  • 13. Low density InAs/(In)GaAs quantum dots emitting at long wavelengths.
    Trevisi G, Seravalli L, Frigeri P, Franchi S.
    Nanotechnology; 2009 Oct 14; 20(41):415607. PubMed ID: 19762951
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  • 20. Correlating the nanostructure and electronic properties of InAs nanowires.
    Schroer MD, Petta JR.
    Nano Lett; 2010 May 12; 10(5):1618-22. PubMed ID: 20384350
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