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255 related items for PubMed ID: 23464836

  • 21. Growth of vertical InAs nanowires on heterostructured substrates.
    Roddaro S, Caroff P, Biasiol G, Rossi F, Bocchi C, Nilsson K, Fröberg L, Wagner JB, Samuelson L, Wernersson LE, Sorba L.
    Nanotechnology; 2009 Jul 15; 20(28):285303. PubMed ID: 19546499
    [Abstract] [Full Text] [Related]

  • 22. Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy.
    Zhou HL, Hoang TB, Dheeraj DL, van Helvoort AT, Liu L, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2009 Oct 14; 20(41):415701. PubMed ID: 19755725
    [Abstract] [Full Text] [Related]

  • 23. Filling of hole arrays with InAs quantum dots.
    Lee JY, Noordhoek MJ, Smereka P, McKay H, Millunchick JM.
    Nanotechnology; 2009 Jul 15; 20(28):285305. PubMed ID: 19546494
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  • 24. Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities.
    Tawara T, Kamada H, Zhang YH, Tanabe T, Cade NI, Ding D, Johnson SR, Gotoh H, Kuramochi E, Notomi M, Sogawa T.
    Opt Express; 2008 Apr 14; 16(8):5199-205. PubMed ID: 18542622
    [Abstract] [Full Text] [Related]

  • 25. Comparative magneto-photoluminescence study of ensembles and of individual InAs quantum dots.
    Moskalenko ES, Larsson LA, Larsson M, Holtz PO, Schoenfeld WV, Petroff PM.
    Nano Lett; 2009 Jan 14; 9(1):353-9. PubMed ID: 19072126
    [Abstract] [Full Text] [Related]

  • 26. Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.
    Konkar A, Lu S, Madhukar A, Hughes SM, Alivisatos AP.
    Nano Lett; 2005 May 14; 5(5):969-73. PubMed ID: 15884904
    [Abstract] [Full Text] [Related]

  • 27. Tunable double quantum dots in InAs nanowires defined by local gate electrodes.
    Fasth C, Fuhrer A, Björk MT, Samuelson L.
    Nano Lett; 2005 Jul 14; 5(7):1487-90. PubMed ID: 16178262
    [Abstract] [Full Text] [Related]

  • 28. Hole subbands in freestanding nanowires: six-band versus eight-band k·p modelling.
    Ravi Kishore VV, Čukarić N, Partoens B, Tadić M, Peeters FM.
    J Phys Condens Matter; 2012 Apr 04; 24(13):135302. PubMed ID: 22392836
    [Abstract] [Full Text] [Related]

  • 29. Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots.
    Kalliakos S, Pellegrini V, Garcia CP, Pinczuk A, Pfeiffer LN, West KW.
    Nano Lett; 2008 Feb 04; 8(2):577-81. PubMed ID: 18186660
    [Abstract] [Full Text] [Related]

  • 30. Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces.
    Wu J, Wang ZM, Dorogan VG, Li S, Mazur YI, Salamo GJ.
    Nanoscale; 2011 Apr 04; 3(4):1485-8. PubMed ID: 21384043
    [Abstract] [Full Text] [Related]

  • 31. Simultaneous integration of different nanowires on single textured Si (100) substrates.
    Rieger T, Rosenbach D, Mussler G, Schäpers T, Grützmacher D, Lepsa MI.
    Nano Lett; 2015 Mar 11; 15(3):1979-86. PubMed ID: 25650521
    [Abstract] [Full Text] [Related]

  • 32. Leveraging crystal anisotropy for deterministic growth of InAs quantum dots with narrow optical linewidths.
    Yakes MK, Yang L, Bracker AS, Sweeney TM, Brereton PG, Kim M, Kim CS, Vora PM, Park D, Carter SG, Gammon D.
    Nano Lett; 2013 Oct 09; 13(10):4870-5. PubMed ID: 23987910
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  • 38. Self-aligned charge read-out for InAs nanowire quantum dots.
    Shorubalko I, Leturcq R, Pfund A, Tyndall D, Krischek R, Schön S, Ensslin K.
    Nano Lett; 2008 Feb 09; 8(2):382-5. PubMed ID: 18197718
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  • 39. Self-directed growth of AlGaAs core-shell nanowires for visible light applications.
    Chen C, Shehata S, Fradin C, LaPierre R, Couteau C, Weihs G.
    Nano Lett; 2007 Sep 09; 7(9):2584-9. PubMed ID: 17696557
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  • 40. High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures.
    Funk S, Royo M, Zardo I, Rudolph D, Morkötter S, Mayer B, Becker J, Bechtold A, Matich S, Döblinger M, Bichler M, Koblmüller G, Finley JJ, Bertoni A, Goldoni G, Abstreiter G.
    Nano Lett; 2013 Sep 09; 13(12):6189-96. PubMed ID: 24274328
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