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Journal Abstract Search

411 related items for PubMed ID: 23540523

  • 1. Photobias instability of high performance solution processed amorphous zinc tin oxide transistors.
    Kim YJ, Yang BS, Oh S, Han SJ, Lee HW, Heo J, Jeong JK, Kim HJ.
    ACS Appl Mater Interfaces; 2013 Apr 24; 5(8):3255-61. PubMed ID: 23540523
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  • 3. Effects of Ga:N addition on the electrical performance of zinc tin oxide thin film transistor by solution-processing.
    Ahn BD, Jeon HJ, Park JS.
    ACS Appl Mater Interfaces; 2014 Jun 25; 6(12):9228-35. PubMed ID: 24892383
    [Abstract] [Full Text] [Related]

  • 4. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
    Jauhari IM, Bak YG, Noviyana I, Putri MA, Lee JA, Heo YW, Lee HY.
    J Nanosci Nanotechnol; 2021 Mar 01; 21(3):1748-1753. PubMed ID: 33404442
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  • 5. Optimization of the Solution-Based Indium-Zinc Oxide/Zinc-Tin Oxide Channel Layer for Thin-Film Transistors.
    Lim K, Choi P, Kim S, Kim H, Kim M, Lee J, Hyeon Y, Koo K, Choi B.
    J Nanosci Nanotechnol; 2018 Sep 01; 18(9):5913-5918. PubMed ID: 29677716
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  • 6. Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films.
    Sanctis S, Koslowski N, Hoffmann R, Guhl C, Erdem E, Weber S, Schneider JJ.
    ACS Appl Mater Interfaces; 2017 Jun 28; 9(25):21328-21337. PubMed ID: 28573850
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  • 7. Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors.
    Wang C, Guo L, Lei M, Wang C, Chu X, Yang F, Gao X, Wamg H, Chi Y, Yang X.
    Nanomaterials (Basel); 2022 Jul 13; 12(14):. PubMed ID: 35889620
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  • 8. High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film.
    Choi CH, Kim T, Ueda S, Shiah YS, Hosono H, Kim J, Jeong JK.
    ACS Appl Mater Interfaces; 2021 Jun 23; 13(24):28451-28461. PubMed ID: 34111928
    [Abstract] [Full Text] [Related]

  • 9. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors.
    Nayak PK, Hedhili MN, Cha D, Alshareef HN.
    ACS Appl Mater Interfaces; 2013 May 23; 5(9):3587-90. PubMed ID: 23544956
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  • 11. Dual electrical behavior of multivalent metal cation-based oxide and its application to thin-film transistors with high mobility and excellent photobias stability.
    Yun MG, Ahn CH, Cho SW, Kim SH, Kim YK, Cho HK.
    ACS Appl Mater Interfaces; 2015 Mar 25; 7(11):6118-24. PubMed ID: 25714371
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  • 12. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.
    Liu A, Liu GX, Zhu HH, Xu F, Fortunato E, Martins R, Shan FK.
    ACS Appl Mater Interfaces; 2014 Oct 22; 6(20):17364-9. PubMed ID: 25285983
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  • 14. Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc-Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment.
    Feng J, Jeon SH, Park J, Lee SH, Jang J, Kang IM, Kim DK, Bae JH.
    Nanomaterials (Basel); 2023 May 24; 13(11):. PubMed ID: 37299625
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  • 16. Indium Tungsten Oxide Thin Films for Flexible High-Performance Transistors and Neuromorphic Electronics.
    Tiwari N, Rajput M, John RA, Kulkarni MR, Nguyen AC, Mathews N.
    ACS Appl Mater Interfaces; 2018 Sep 12; 10(36):30506-30513. PubMed ID: 30129368
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  • 17. Effects of Double Active Layer and Acetic Acid Stabilizer on the Electrical Properties of a Solution-Processed Zinc Tin Oxide Thin-Film Transistor.
    Shin JH, Kim SJ, Ha SS, Im YJ, Park CH, Yi M.
    J Nanosci Nanotechnol; 2015 Oct 12; 15(10):7743-7. PubMed ID: 26726405
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  • 19. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric.
    Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Baik HK.
    ACS Appl Mater Interfaces; 2013 Jan 23; 5(2):410-7. PubMed ID: 23267443
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  • 20. Dual-Functional Superoxide Precursor To Improve the Electrical Characteristics of Oxide Thin Film Transistors.
    Jung TS, Lee H, Kim HJ, Lee JH, Kim HJ.
    ACS Appl Mater Interfaces; 2018 Dec 26; 10(51):44554-44560. PubMed ID: 30511830
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