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Journal Abstract Search

425 related items for PubMed ID: 23571934

  • 1. Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.
    Jia C, Yu T, Lu H, Zhong C, Sun Y, Tong Y, Zhang G.
    Opt Express; 2013 Apr 08; 21(7):8444-9. PubMed ID: 23571934
    [Abstract] [Full Text] [Related]

  • 2. Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer.
    Jang LW, Ju JW, Jeon DW, Park JW, Polyakov AY, Lee SJ, Baek JH, Lee SM, Cho YH, Lee IH.
    Opt Express; 2012 Mar 12; 20(6):6036-41. PubMed ID: 22418481
    [Abstract] [Full Text] [Related]

  • 3. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.
    Zhang ZH, Tan ST, Liu W, Ju Z, Zheng K, Kyaw Z, Ji Y, Hasanov N, Sun XW, Demir HV.
    Opt Express; 2013 Feb 25; 21(4):4958-69. PubMed ID: 23482028
    [Abstract] [Full Text] [Related]

  • 4. Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes.
    Son JH, Lee JL.
    Opt Express; 2010 Mar 15; 18(6):5466-71. PubMed ID: 20389563
    [Abstract] [Full Text] [Related]

  • 5. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes.
    Kyaw Z, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Hasanov N, Zhu B, Lu S, Zhang Y, Sun XW, Demir HV.
    Opt Express; 2014 Jan 13; 22(1):809-16. PubMed ID: 24515040
    [Abstract] [Full Text] [Related]

  • 6. Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
    Cho CY, Lee JB, Lee SJ, Han SH, Park TY, Kim JW, Kim YC, Park SJ.
    Opt Express; 2010 Jan 18; 18(2):1462-8. PubMed ID: 20173974
    [Abstract] [Full Text] [Related]

  • 7. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.
    Wei T, Kong Q, Wang J, Li J, Zeng Y, Wang G, Li J, Liao Y, Yi F.
    Opt Express; 2011 Jan 17; 19(2):1065-71. PubMed ID: 21263645
    [Abstract] [Full Text] [Related]

  • 8. High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors.
    Ryu JH, Kim HY, Kim HK, Katharria YS, Han N, Kang JH, Park YJ, Han M, Ryu BD, Ko KB, Suh EK, Hong CH.
    Opt Express; 2012 Apr 23; 20(9):9999-10003. PubMed ID: 22535092
    [Abstract] [Full Text] [Related]

  • 9. Vertical InGaN light-emitting diodes with a sapphire-face-up structure.
    Yang YC, Sheu JK, Lee ML, Tu SJ, Huang FW, Lai WC, Hon S, Ko TK.
    Opt Express; 2012 Jan 02; 20(1):A119-24. PubMed ID: 22379672
    [Abstract] [Full Text] [Related]

  • 10. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
    Zhao Y, Yan Q, Feezell D, Fujito K, Van de Walle CG, Speck JS, DenBaars SP, Nakamura S.
    Opt Express; 2013 Jan 14; 21 Suppl 1():A53-9. PubMed ID: 23389275
    [Abstract] [Full Text] [Related]

  • 11. Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs.
    Römer F, Witzigmann B.
    Opt Express; 2014 Oct 20; 22 Suppl 6():A1440-52. PubMed ID: 25607301
    [Abstract] [Full Text] [Related]

  • 12. Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.
    Seo YG, Baik KH, Song H, Son JS, Oh K, Hwang SM.
    Opt Express; 2011 Jul 04; 19(14):12919-24. PubMed ID: 21747444
    [Abstract] [Full Text] [Related]

  • 13. Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes.
    Park YJ, Kim HY, Ryu JH, Kim HK, Kang JH, Han N, Han M, Jeong H, Jeong MS, Hong CH.
    Opt Express; 2011 Jan 31; 19(3):2029-36. PubMed ID: 21369019
    [Abstract] [Full Text] [Related]

  • 14. GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells.
    Chang HM, Lai WC, Chen WS, Chang SJ.
    Opt Express; 2015 Apr 06; 23(7):A337-45. PubMed ID: 25968799
    [Abstract] [Full Text] [Related]

  • 15. Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.
    Li Q, Westlake KR, Crawford MH, Lee SR, Koleske DD, Figiel JJ, Cross KC, Fathololoumi S, Mi Z, Wang GT.
    Opt Express; 2011 Dec 05; 19(25):25528-34. PubMed ID: 22273946
    [Abstract] [Full Text] [Related]

  • 16. Structural and optical properties of disc-in-wire InGaN/GaN LEDs.
    Yan L, Jahangir S, Wight SA, Nikoobakht B, Bhattacharya P, Millunchick JM.
    Nano Lett; 2015 Mar 11; 15(3):1535-9. PubMed ID: 25658444
    [Abstract] [Full Text] [Related]

  • 17. Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles.
    Hong SH, Cho CY, Lee SJ, Yim SY, Lim W, Kim ST, Park SJ.
    Opt Express; 2013 Feb 11; 21(3):3138-44. PubMed ID: 23481772
    [Abstract] [Full Text] [Related]

  • 18. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.
    Park H, Baik KH, Kim J, Ren F, Pearton SJ.
    Opt Express; 2013 May 20; 21(10):12908-13. PubMed ID: 23736510
    [Abstract] [Full Text] [Related]

  • 19. Epitaxial growth of InGaN nanowire arrays for light emitting diodes.
    Hahn C, Zhang Z, Fu A, Wu CH, Hwang YJ, Gargas DJ, Yang P.
    ACS Nano; 2011 May 24; 5(5):3970-6. PubMed ID: 21495684
    [Abstract] [Full Text] [Related]

  • 20. Evaluation of InGaN/GaN light-emitting diodes of circular geometry.
    Wang XH, Fu WY, Lai PT, Choi HW.
    Opt Express; 2009 Dec 07; 17(25):22311-9. PubMed ID: 20052154
    [Abstract] [Full Text] [Related]

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