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Journal Abstract Search

495 related items for PubMed ID: 23619012

  • 1. Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
    Joyce HJ, Docherty CJ, Gao Q, Tan HH, Jagadish C, Lloyd-Hughes J, Herz LM, Johnston MB.
    Nanotechnology; 2013 May 31; 24(21):214006. PubMed ID: 23619012
    [Abstract] [Full Text] [Related]

  • 2. Carrier lifetime and mobility enhancement in nearly defect-free core-shell nanowires measured using time-resolved terahertz spectroscopy.
    Parkinson P, Joyce HJ, Gao Q, Tan HH, Zhang X, Zou J, Jagadish C, Herz LM, Johnston MB.
    Nano Lett; 2009 Sep 31; 9(9):3349-53. PubMed ID: 19736975
    [Abstract] [Full Text] [Related]

  • 3. Manipulation of electron orbitals in hard-wall InAs/InP nanowire quantum dots.
    Roddaro S, Pescaglini A, Ercolani D, Sorba L, Beltram F.
    Nano Lett; 2011 Apr 13; 11(4):1695-9. PubMed ID: 21446718
    [Abstract] [Full Text] [Related]

  • 4. Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility.
    Boland JL, Conesa-Boj S, Parkinson P, Tütüncüoglu G, Matteini F, Rüffer D, Casadei A, Amaduzzi F, Jabeen F, Davies CL, Joyce HJ, Herz LM, Fontcuberta i Morral A, Johnston MB.
    Nano Lett; 2015 Feb 11; 15(2):1336-42. PubMed ID: 25602841
    [Abstract] [Full Text] [Related]

  • 5. Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.
    Joyce HJ, Wong-Leung J, Yong CK, Docherty CJ, Paiman S, Gao Q, Tan HH, Jagadish C, Lloyd-Hughes J, Herz LM, Johnston MB.
    Nano Lett; 2012 Oct 10; 12(10):5325-30. PubMed ID: 22962963
    [Abstract] [Full Text] [Related]

  • 6. Evolution of epitaxial InAs nanowires on GaAs 111B.
    Zhang X, Zou J, Paladugu M, Guo Y, Wang Y, Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C.
    Small; 2009 Mar 10; 5(3):366-9. PubMed ID: 19152357
    [No Abstract] [Full Text] [Related]

  • 7. From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires.
    Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A.
    Nano Lett; 2016 Jan 13; 16(1):637-43. PubMed ID: 26686394
    [Abstract] [Full Text] [Related]

  • 8. Simultaneous integration of different nanowires on single textured Si (100) substrates.
    Rieger T, Rosenbach D, Mussler G, Schäpers T, Grützmacher D, Lepsa MI.
    Nano Lett; 2015 Mar 11; 15(3):1979-86. PubMed ID: 25650521
    [Abstract] [Full Text] [Related]

  • 9. Electrical and optical characterization of surface passivation in GaAs nanowires.
    Chang CC, Chi CY, Yao M, Huang N, Chen CC, Theiss J, Bushmaker AW, Lalumondiere S, Yeh TW, Povinelli ML, Zhou C, Dapkus PD, Cronin SB.
    Nano Lett; 2012 Sep 12; 12(9):4484-9. PubMed ID: 22889241
    [Abstract] [Full Text] [Related]

  • 10. Nanowire-based field effect transistors for terahertz detection and imaging systems.
    Romeo L, Coquillat D, Pea M, Ercolani D, Beltram F, Sorba L, Knap W, Tredicucci A, Vitiello MS.
    Nanotechnology; 2013 May 31; 24(21):214005. PubMed ID: 23618953
    [Abstract] [Full Text] [Related]

  • 11. Growth of vertical InAs nanowires on heterostructured substrates.
    Roddaro S, Caroff P, Biasiol G, Rossi F, Bocchi C, Nilsson K, Fröberg L, Wagner JB, Samuelson L, Wernersson LE, Sorba L.
    Nanotechnology; 2009 Jul 15; 20(28):285303. PubMed ID: 19546499
    [Abstract] [Full Text] [Related]

  • 12. Electron trapping in InP nanowire FETs with stacking faults.
    Wallentin J, Ek M, Wallenberg LR, Samuelson L, Borgström MT.
    Nano Lett; 2012 Jan 11; 12(1):151-5. PubMed ID: 22149329
    [Abstract] [Full Text] [Related]

  • 13. Large area photoconductive terahertz emitter for 1.55 μm excitation based on an InGaAs heterostructure.
    Mittendorff M, Xu M, Dietz RJ, Künzel H, Sartorius B, Schneider H, Helm M, Winnerl S.
    Nanotechnology; 2013 May 31; 24(21):214007. PubMed ID: 23619031
    [Abstract] [Full Text] [Related]

  • 14. Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation.
    Parker JS, Sivananthan A, Norberg E, Coldren LA.
    Opt Express; 2012 Aug 27; 20(18):19946-55. PubMed ID: 23037047
    [Abstract] [Full Text] [Related]

  • 15. InAs/InP radial nanowire heterostructures as high electron mobility devices.
    Jiang X, Xiong Q, Nam S, Qian F, Li Y, Lieber CM.
    Nano Lett; 2007 Oct 27; 7(10):3214-8. PubMed ID: 17867718
    [Abstract] [Full Text] [Related]

  • 16. Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.
    Kim Y, Joyce HJ, Gao Q, Tan HH, Jagadish C, Paladugu M, Zou J, Suvorova AA.
    Nano Lett; 2006 Apr 27; 6(4):599-604. PubMed ID: 16608251
    [Abstract] [Full Text] [Related]

  • 17. Surface chemistry, structure, and electronic properties from microns to the atomic scale of axially doped semiconductor nanowires.
    Hjort M, Wallentin J, Timm R, Zakharov AA, Håkanson U, Andersen JN, Lundgren E, Samuelson L, Borgström MT, Mikkelsen A.
    ACS Nano; 2012 Nov 27; 6(11):9679-89. PubMed ID: 23062066
    [Abstract] [Full Text] [Related]

  • 18. Hole subbands in freestanding nanowires: six-band versus eight-band k·p modelling.
    Ravi Kishore VV, Čukarić N, Partoens B, Tadić M, Peeters FM.
    J Phys Condens Matter; 2012 Apr 04; 24(13):135302. PubMed ID: 22392836
    [Abstract] [Full Text] [Related]

  • 19. Controlling the abruptness of axial heterojunctions in III-V nanowires: beyond the reservoir effect.
    Dick KA, Bolinsson J, Borg BM, Johansson J.
    Nano Lett; 2012 Jun 13; 12(6):3200-6. PubMed ID: 22642741
    [Abstract] [Full Text] [Related]

  • 20. InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.
    Natrella M, Rouvalis E, Liu CP, Liu H, Renaud CC, Seeds AJ.
    Opt Express; 2012 Aug 13; 20(17):19279-88. PubMed ID: 23038569
    [Abstract] [Full Text] [Related]

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