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Journal Abstract Search

265 related items for PubMed ID: 23637013

  • 1. Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires.
    Lindgren D, Kawaguchi K, Heurlin M, Borgström MT, Pistol ME, Samuelson L, Gustafsson A.
    Nanotechnology; 2013 Jun 07; 24(22):225203. PubMed ID: 23637013
    [Abstract] [Full Text] [Related]

  • 2. Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate.
    Alouane MH, Anufriev R, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C.
    Nanotechnology; 2011 Oct 07; 22(40):405702. PubMed ID: 21911925
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  • 4. Polychromatic emission in a wide energy range from InP-InAs-InP multi-shell nanowires.
    Battiato S, Wu S, Zannier V, Bertoni A, Goldoni G, Li A, Xiao S, Han XD, Beltram F, Sorba L, Xu X, Rossella F.
    Nanotechnology; 2019 May 10; 30(19):194004. PubMed ID: 30634180
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  • 5. Quantum-confinement effects in InAs-InP core-shell nanowires.
    Zanolli Z, Pistol ME, Fröberg LE, Samuelson L.
    J Phys Condens Matter; 2007 Jul 25; 19(29):295219. PubMed ID: 21483071
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  • 6. Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.
    Kriegner D, Wintersberger E, Kawaguchi K, Wallentin J, Borgström MT, Stangl J.
    Nanotechnology; 2011 Oct 21; 22(42):425704. PubMed ID: 21937785
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  • 7. Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires.
    Göransson DJO, Borgström MT, Huang YQ, Messing ME, Hessman D, Buyanova IA, Chen WM, Xu HQ.
    Nano Lett; 2019 Apr 10; 19(4):2674-2681. PubMed ID: 30908918
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  • 8. Optical emission of InAs nanowires.
    Möller M, de Lima MM, Cantarero A, Chiaramonte T, Cotta MA, Iikawa F.
    Nanotechnology; 2012 Sep 21; 23(37):375704. PubMed ID: 22922756
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  • 10. Selective GaSb radial growth on crystal phase engineered InAs nanowires.
    Namazi L, Nilsson M, Lehmann S, Thelander C, Dick KA.
    Nanoscale; 2015 Jun 21; 7(23):10472-81. PubMed ID: 26006335
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  • 11. Photoluminescence and photocurrent from InP nanowires with InAsP quantum dots grown on Si by molecular beam epitaxy.
    Kuyanov P, LaPierre RR.
    Nanotechnology; 2015 Aug 07; 26(31):315202. PubMed ID: 26177614
    [Abstract] [Full Text] [Related]

  • 12. High optical quality single crystal phase wurtzite and zincblende InP nanowires.
    Vu TT, Zehender T, Verheijen MA, Plissard SR, Immink GW, Haverkort JE, Bakkers EP.
    Nanotechnology; 2013 Mar 22; 24(11):115705. PubMed ID: 23455417
    [Abstract] [Full Text] [Related]

  • 13. InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range.
    Fonseka HA, Ameruddin AS, Caroff P, Tedeschi D, De Luca M, Mura F, Guo Y, Lysevych M, Wang F, Tan HH, Polimeni A, Jagadish C.
    Nanoscale; 2017 Sep 21; 9(36):13554-13562. PubMed ID: 28872181
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  • 15. InAs(1-x)P(x) nanowires grown by catalyst-free molecular-beam epitaxy.
    Isakov I, Panfilova M, Sourribes MJ, Tileli V, Porter AE, Warburton PA.
    Nanotechnology; 2013 Mar 01; 24(8):085707. PubMed ID: 23386103
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  • 17. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.
    Iqbal A, Beech JP, Anttu N, Pistol ME, Samuelson L, Borgström MT, Yartsev A.
    Nanotechnology; 2013 Mar 22; 24(11):115706. PubMed ID: 23455456
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  • 18. Zincblende InAsxP1-x/InP Quantum Dot Nanowires for Telecom Wavelength Emission.
    Bucci G, Zannier V, Rossi F, Musiał A, Boniecki J, Sęk G, Sorba L.
    ACS Appl Mater Interfaces; 2024 May 22; 16(20):26491-26499. PubMed ID: 38729621
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  • 20. Correlated Nanoscale Analysis of the Emission from Wurtzite versus Zincblende (In,Ga)As/GaAs Nanowire Core-Shell Quantum Wells.
    Lähnemann J, Hill MO, Herranz J, Marquardt O, Gao G, Al Hassan A, Davtyan A, Hruszkewycz SO, Holt MV, Huang C, Calvo-Almazán I, Jahn U, Pietsch U, Lauhon LJ, Geelhaar L.
    Nano Lett; 2019 Jul 10; 19(7):4448-4457. PubMed ID: 31141672
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