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254 related items for PubMed ID: 23661186

  • 1. Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy.
    Zhao S, Kibria MG, Wang Q, Nguyen HP, Mi Z.
    Nanoscale; 2013 Jun 21; 5(12):5283-7. PubMed ID: 23661186
    [Abstract] [Full Text] [Related]

  • 2. Patterned growth of vertically aligned ZnO nanowire arrays on inorganic substrates at low temperature without catalyst.
    Xu S, Wei Y, Kirkham M, Liu J, Mai W, Davidovic D, Snyder RL, Wang ZL.
    J Am Chem Soc; 2008 Nov 12; 130(45):14958-9. PubMed ID: 18921981
    [Abstract] [Full Text] [Related]

  • 3. Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires.
    Zhang J, Zhang L, Jiang F, Yang Y, Li J.
    J Phys Chem B; 2005 Jan 13; 109(1):151-4. PubMed ID: 16850998
    [Abstract] [Full Text] [Related]

  • 4. Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires.
    Fontcuberta i Morral A, Spirkoska D, Arbiol J, Heigoldt M, Ramon Morante J, Abstreiter G.
    Small; 2008 Jul 13; 4(7):899-903. PubMed ID: 18504720
    [No Abstract] [Full Text] [Related]

  • 5. Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy.
    Landré O, Bougerol C, Renevier H, Daudin B.
    Nanotechnology; 2009 Oct 14; 20(41):415602. PubMed ID: 19755728
    [Abstract] [Full Text] [Related]

  • 6. From GaN to ZnGa(2)O(4) through a low-temperature process: nanotube and heterostructure arrays.
    Lu MY, Zhou X, Chiu CY, Crawford S, Gradečak S.
    ACS Appl Mater Interfaces; 2014 Jan 22; 6(2):882-7. PubMed ID: 24354279
    [Abstract] [Full Text] [Related]

  • 7. Optical properties of plasmonic light-emitting diodes based on flip-chip III-nitride core-shell nanowires.
    Nami M, Feezell DF.
    Opt Express; 2014 Dec 01; 22(24):29445-55. PubMed ID: 25606879
    [Abstract] [Full Text] [Related]

  • 8. Development of Ohmic nanocontacts via surface modification for nanowire-based electronic and optoelectronic devices: ZnO nanowires as an example.
    He JH, Ke JJ, Chang PH, Tsai KT, Yang PC, Chan IM.
    Nanoscale; 2012 Jun 07; 4(11):3399-404. PubMed ID: 22588602
    [Abstract] [Full Text] [Related]

  • 9. Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices.
    Sarwar AT, Carnevale SD, Yang F, Kent TF, Jamison JJ, McComb DW, Myers RC.
    Small; 2015 Oct 28; 11(40):5402-8. PubMed ID: 26307552
    [Abstract] [Full Text] [Related]

  • 10. Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film.
    Wölz M, Hauswald C, Flissikowski T, Gotschke T, Fernández-Garrido S, Brandt O, Grahn HT, Geelhaar L, Riechert H.
    Nano Lett; 2015 Jun 10; 15(6):3743-7. PubMed ID: 26001039
    [Abstract] [Full Text] [Related]

  • 11. Submicrometre resolved optical characterization of green nanowire-based light emitting diodes.
    Bavencove AL, Tourbot G, Garcia J, Désières Y, Gilet P, Levy F, André B, Gayral B, Daudin B, Dang le S.
    Nanotechnology; 2011 Aug 26; 22(34):345705. PubMed ID: 21795769
    [Abstract] [Full Text] [Related]

  • 12. Epitaxy of GaN Nanowires on Graphene.
    Kumaresan V, Largeau L, Madouri A, Glas F, Zhang H, Oehler F, Cavanna A, Babichev A, Travers L, Gogneau N, Tchernycheva M, Harmand JC.
    Nano Lett; 2016 Aug 10; 16(8):4895-902. PubMed ID: 27414518
    [Abstract] [Full Text] [Related]

  • 13. Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer.
    Schumann T, Gotschke T, Limbach F, Stoica T, Calarco R.
    Nanotechnology; 2011 Mar 04; 22(9):095603. PubMed ID: 21270490
    [Abstract] [Full Text] [Related]

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  • 15. InGaN/GaN nanowires as a new platform for photoelectrochemical sensors - detection of NADH.
    Riedel M, Hölzel S, Hille P, Schörmann J, Eickhoff M, Lisdat F.
    Biosens Bioelectron; 2017 Aug 15; 94():298-304. PubMed ID: 28315593
    [Abstract] [Full Text] [Related]

  • 16. Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts.
    Ha R, Kim SW, Choi HJ.
    Nanoscale Res Lett; 2013 Jun 26; 8(1):299. PubMed ID: 23803283
    [Abstract] [Full Text] [Related]

  • 17. Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes.
    Hu J, Jiang Y, Meng X, Lee CS, Lee ST.
    Small; 2005 Apr 26; 1(4):429-38. PubMed ID: 17193468
    [Abstract] [Full Text] [Related]

  • 18. Highly stable photoelectrochemical water splitting and hydrogen generation using a double-band InGaN/GaN core/shell nanowire photoanode.
    AlOtaibi B, Nguyen HP, Zhao S, Kibria MG, Fan S, Mi Z.
    Nano Lett; 2013 Sep 11; 13(9):4356-61. PubMed ID: 23927558
    [Abstract] [Full Text] [Related]

  • 19. Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.
    Hou JJ, Han N, Wang F, Xiu F, Yip S, Hui AT, Hung T, Ho JC.
    ACS Nano; 2012 Apr 24; 6(4):3624-30. PubMed ID: 22443352
    [Abstract] [Full Text] [Related]

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