These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


Pubmed for Handhelds

PUBMED FOR HANDHELDS

Journal Abstract Search

663 related items for PubMed ID: 23876148

  • 1. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.
    Yu X, Zhou N, Smith J, Lin H, Stallings K, Yu J, Marks TJ, Facchetti A.
    ACS Appl Mater Interfaces; 2013 Aug 28; 5(16):7983-8. PubMed ID: 23876148
    [Abstract] [Full Text] [Related]

  • 2. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.
    Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Lee HW, Han SW, Baik HK.
    ACS Appl Mater Interfaces; 2013 Aug 28; 5(16):8067-75. PubMed ID: 23883390
    [Abstract] [Full Text] [Related]

  • 3. Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors.
    Kim GB, Kim T, Bang SW, Hur JS, Choi CH, Kim MJ, Jeong JK.
    ACS Appl Mater Interfaces; 2024 Apr 25. PubMed ID: 38662878
    [Abstract] [Full Text] [Related]

  • 4. Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach.
    Cho MH, Choi CH, Jeong JK.
    ACS Appl Mater Interfaces; 2022 Apr 27; 14(16):18646-18661. PubMed ID: 35426670
    [Abstract] [Full Text] [Related]

  • 5. All-amorphous-oxide transparent, flexible thin-film transistors. Efficacy of bilayer gate dielectrics.
    Liu J, Buchholz DB, Hennek JW, Chang RP, Facchetti A, Marks TJ.
    J Am Chem Soc; 2010 Sep 01; 132(34):11934-42. PubMed ID: 20698566
    [Abstract] [Full Text] [Related]

  • 6.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 7.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 8.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 9.
    ; . PubMed ID:
    [No Abstract] [Full Text] [Related]

  • 10. Tailoring indium oxide nanocrystal synthesis conditions for air-stable high-performance solution-processed thin-film transistors.
    Swisher SL, Volkman SK, Subramanian V.
    ACS Appl Mater Interfaces; 2015 May 20; 7(19):10069-75. PubMed ID: 25915094
    [Abstract] [Full Text] [Related]

  • 11. Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application.
    Kim HY, Jung EA, Mun G, Agbenyeke RE, Park BK, Park JS, Son SU, Jeon DJ, Park SK, Chung TM, Han JH.
    ACS Appl Mater Interfaces; 2016 Oct 12; 8(40):26924-26931. PubMed ID: 27673338
    [Abstract] [Full Text] [Related]

  • 12. Self-Aligned Top-Gate Metal-Oxide Thin-Film Transistors Using a Solution-Processed Polymer Gate Dielectric.
    Choi S, Song S, Kim T, Shin JC, Jo JW, Park SK, Kim YH.
    Micromachines (Basel); 2020 Nov 25; 11(12):. PubMed ID: 33255690
    [Abstract] [Full Text] [Related]

  • 13. Printed indium gallium zinc oxide transistors. Self-assembled nanodielectric effects on low-temperature combustion growth and carrier mobility.
    Everaerts K, Zeng L, Hennek JW, Camacho DI, Jariwala D, Bedzyk MJ, Hersam MC, Marks TJ.
    ACS Appl Mater Interfaces; 2013 Nov 27; 5(22):11884-93. PubMed ID: 24187917
    [Abstract] [Full Text] [Related]

  • 14. Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.
    Zan HW, Yeh CC, Meng HF, Tsai CC, Chen LH.
    Adv Mater; 2012 Jul 10; 24(26):3509-14. PubMed ID: 22678659
    [Abstract] [Full Text] [Related]

  • 15. UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors.
    Carlos E, Branquinho R, Kiazadeh A, Barquinha P, Martins R, Fortunato E.
    ACS Appl Mater Interfaces; 2016 Nov 16; 8(45):31100-31108. PubMed ID: 27762536
    [Abstract] [Full Text] [Related]

  • 16. Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.
    Park JH, Oh JY, Han SW, Lee TI, Baik HK.
    ACS Appl Mater Interfaces; 2015 Mar 04; 7(8):4494-503. PubMed ID: 25664940
    [Abstract] [Full Text] [Related]

  • 17. Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition.
    Sheng J, Lee HJ, Oh S, Park JS.
    ACS Appl Mater Interfaces; 2016 Dec 14; 8(49):33821-33828. PubMed ID: 27960372
    [Abstract] [Full Text] [Related]

  • 18. High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors.
    Magari Y, Kataoka T, Yeh W, Furuta M.
    Nat Commun; 2022 Feb 28; 13(1):1078. PubMed ID: 35228522
    [Abstract] [Full Text] [Related]

  • 19. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.
    Jaehnike F, Pham DV, Anselmann R, Bock C, Kunze U.
    ACS Appl Mater Interfaces; 2015 Jul 01; 7(25):14011-7. PubMed ID: 26039187
    [Abstract] [Full Text] [Related]

  • 20. Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors.
    Stallings K, Smith J, Chen Y, Zeng L, Wang B, Di Carlo G, Bedzyk MJ, Facchetti A, Marks TJ.
    ACS Appl Mater Interfaces; 2021 Apr 07; 13(13):15399-15408. PubMed ID: 33779161
    [Abstract] [Full Text] [Related]

    Page: [Next] [New Search]
    of 34.