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Journal Abstract Search

358 related items for PubMed ID: 23881182

  • 21. Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy.
    Zhang Y, Aagesen M, Holm JV, Jørgensen HI, Wu J, Liu H.
    Nano Lett; 2013 Aug 14; 13(8):3897-902. PubMed ID: 23899047
    [Abstract] [Full Text] [Related]

  • 22. Model of patterned self-assisted nanowire growth.
    Gibson SJ, LaPierre RR.
    Nanotechnology; 2014 Oct 17; 25(41):415304. PubMed ID: 25258192
    [Abstract] [Full Text] [Related]

  • 23. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.
    So H, Pan D, Li L, Zhao J.
    Nanotechnology; 2017 Mar 01; 28(13):135704. PubMed ID: 28256450
    [Abstract] [Full Text] [Related]

  • 24. Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy.
    Dheeraj DL, Munshi AM, Scheffler M, van Helvoort AT, Weman H, Fimland BO.
    Nanotechnology; 2013 Jan 11; 24(1):015601. PubMed ID: 23220972
    [Abstract] [Full Text] [Related]

  • 25. Growth kinetics of heterostructured GaP-GaAs nanowires.
    Verheijen MA, Immink G, de Smet T, Borgström MT, Bakkers EP.
    J Am Chem Soc; 2006 Feb 01; 128(4):1353-9. PubMed ID: 16433555
    [Abstract] [Full Text] [Related]

  • 26. Self-catalyzed MBE grown GaAs/GaAs(x)Sb(1-x) core-shell nanowires in ZB and WZ crystal structures.
    Ghalamestani SG, Munshi AM, Dheeraj DL, Fimland BO, Weman H, Dick KA.
    Nanotechnology; 2013 Oct 11; 24(40):405601. PubMed ID: 24028926
    [Abstract] [Full Text] [Related]

  • 27. Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy.
    Zhang Z, Lu ZY, Chen PP, Lu W, Zou J.
    Nanoscale; 2015 Aug 07; 7(29):12592-7. PubMed ID: 26145435
    [Abstract] [Full Text] [Related]

  • 28. Nucleation and growth mechanism of self-catalyzed InAs nanowires on silicon.
    Gomes UP, Ercolani D, Zannier V, David J, Gemmi M, Beltram F, Sorba L.
    Nanotechnology; 2016 Jun 24; 27(25):255601. PubMed ID: 27171601
    [Abstract] [Full Text] [Related]

  • 29. Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy.
    Bauer B, Rudolph A, Soda M, Fontcuberta i Morral A, Zweck J, Schuh D, Reiger E.
    Nanotechnology; 2010 Oct 29; 21(43):435601. PubMed ID: 20876983
    [Abstract] [Full Text] [Related]

  • 30. Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.
    Dheeraj DL, Patriarche G, Largeau L, Zhou HL, van Helvoort AT, Glas F, Harmand JC, Fimland BO, Weman H.
    Nanotechnology; 2008 Jul 09; 19(27):275605. PubMed ID: 21828712
    [Abstract] [Full Text] [Related]

  • 31. Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon.
    Russo-Averchi E, Heiss M, Michelet L, Krogstrup P, Nygard J, Magen C, Morante JR, Uccelli E, Arbiol J, Fontcuberta i Morral A.
    Nanoscale; 2012 Mar 07; 4(5):1486-90. PubMed ID: 22314270
    [Abstract] [Full Text] [Related]

  • 32. Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires.
    Schroth P, Al Humaidi M, Feigl L, Jakob J, Al Hassan A, Davtyan A, Küpers H, Tahraoui A, Geelhaar L, Pietsch U, Baumbach T.
    Nano Lett; 2019 Jul 10; 19(7):4263-4271. PubMed ID: 31150261
    [Abstract] [Full Text] [Related]

  • 33.
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  • 34. Dislocation-free axial InAs-on-GaAs nanowires on silicon.
    Beznasyuk DV, Robin E, Hertog MD, Claudon J, Hocevar M.
    Nanotechnology; 2017 Sep 08; 28(36):365602. PubMed ID: 28671871
    [Abstract] [Full Text] [Related]

  • 35. CdTe Nanowires by Au-Catalyzed Metalorganic Vapor Phase Epitaxy.
    Di Carlo V, Prete P, Dubrovskii VG, Berdnikov Y, Lovergine N.
    Nano Lett; 2017 Jul 12; 17(7):4075-4082. PubMed ID: 28613888
    [Abstract] [Full Text] [Related]

  • 36.
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  • 37. Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?
    Hijazi H, Monier G, Gil E, Trassoudaine A, Bougerol C, Leroux C, Castellucci D, Robert-Goumet C, Hoggan PE, André Y, Isik Goktas N, LaPierre RR, Dubrovskii VG.
    Nano Lett; 2019 Jul 10; 19(7):4498-4504. PubMed ID: 31203632
    [Abstract] [Full Text] [Related]

  • 38. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates.
    Gas K, Sadowski J, Kasama T, Siusys A, Zaleszczyk W, Wojciechowski T, Morhange JF, Altintaş A, Xu HQ, Szuszkiewicz W.
    Nanoscale; 2013 Aug 21; 5(16):7410-8. PubMed ID: 23832244
    [Abstract] [Full Text] [Related]

  • 39. Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.
    Dubrovskii VG, Xu T, Álvarez AD, Plissard SR, Caroff P, Glas F, Grandidier B.
    Nano Lett; 2015 Aug 12; 15(8):5580-4. PubMed ID: 26189571
    [Abstract] [Full Text] [Related]

  • 40. Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.
    Dong Z, André Y, Dubrovskii VG, Bougerol C, Leroux C, Ramdani MR, Monier G, Trassoudaine A, Castelluci D, Gil E.
    Nanotechnology; 2017 Mar 24; 28(12):125602. PubMed ID: 28140362
    [Abstract] [Full Text] [Related]

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