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Journal Abstract Search

358 related items for PubMed ID: 23881182

  • 41.
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  • 42. Twinning superlattice formation in GaAs nanowires.
    Burgess T, Breuer S, Caroff P, Wong-Leung J, Gao Q, Hoe Tan H, Jagadish C.
    ACS Nano; 2013 Sep 24; 7(9):8105-14. PubMed ID: 23987994
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  • 43. Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B.
    Davydok A, Rieger T, Biermanns A, Saqib M, Grap T, Lepsa MI, Pietsch U.
    J Appl Crystallogr; 2013 Aug 01; 46(Pt 4):893-897. PubMed ID: 24046494
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  • 44. Catalyst orientation-induced growth of defect-free zinc-blende structured ⟨001̅⟩ InAs nanowires.
    Zhang Z, Zheng K, Lu ZY, Chen PP, Lu W, Zou J.
    Nano Lett; 2015 Feb 11; 15(2):876-82. PubMed ID: 25580886
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  • 50. Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates.
    Araki Y, Yamaguchi M, Ishikawa F.
    Nanotechnology; 2013 Feb 15; 24(6):065601. PubMed ID: 23324475
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  • 57. Self-catalytic solution for single-crystal nanowire and nanotube growth.
    Mohammad SN.
    J Chem Phys; 2007 Dec 28; 127(24):244702. PubMed ID: 18163690
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  • 59. Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate.
    Wu J, Ramsay A, Sanchez A, Zhang Y, Kim D, Brossard F, Hu X, Benamara M, Ware ME, Mazur YI, Salamo GJ, Aagesen M, Wang Z, Liu H.
    Nano Lett; 2016 Jan 13; 16(1):504-11. PubMed ID: 26666697
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