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525 related items for PubMed ID: 23883390
1. Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor. Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Lee HW, Han SW, Baik HK. ACS Appl Mater Interfaces; 2013 Aug 28; 5(16):8067-75. PubMed ID: 23883390 [Abstract] [Full Text] [Related]
3. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric. Liu A, Liu GX, Zhu HH, Xu F, Fortunato E, Martins R, Shan FK. ACS Appl Mater Interfaces; 2014 Oct 22; 6(20):17364-9. PubMed ID: 25285983 [Abstract] [Full Text] [Related]
4. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric. Park JH, Yoo YB, Lee KH, Jang WS, Oh JY, Chae SS, Baik HK. ACS Appl Mater Interfaces; 2013 Jan 23; 5(2):410-7. PubMed ID: 23267443 [Abstract] [Full Text] [Related]
7. Li-Assisted Low-Temperature Phase Transitions in Solution-Processed Indium Oxide Films for High-Performance Thin Film Transistor. Nguyen MC, Jang M, Lee DH, Bang HJ, Lee M, Jeong JK, Yang H, Choi R. Sci Rep; 2016 Apr 28; 6():25079. PubMed ID: 27121951 [Abstract] [Full Text] [Related]
8. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors. Jaehnike F, Pham DV, Anselmann R, Bock C, Kunze U. ACS Appl Mater Interfaces; 2015 Jul 01; 7(25):14011-7. PubMed ID: 26039187 [Abstract] [Full Text] [Related]
15. Low-temperature solution-processed amorphous indium tin oxide field-effect transistors. Kim HS, Kim MG, Ha YG, Kanatzidis MG, Marks TJ, Facchetti A. J Am Chem Soc; 2009 Aug 12; 131(31):10826-7. PubMed ID: 19603806 [Abstract] [Full Text] [Related]