These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
2. Effect of oxidizable electrode material on resistive switching characteristics of ZnO(x)S(1-x) films. Cho K, Park S, Chung I, Kim S. J Nanosci Nanotechnol; 2014 Nov; 14(11):8187-90. PubMed ID: 25958497 [Abstract] [Full Text] [Related]
3. Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films. Lin KW, Wang TY, Chang YC. Polymers (Basel); 2021 Feb 26; 13(5):. PubMed ID: 33652819 [Abstract] [Full Text] [Related]
4. Functional bipolar resistive switching in AlN/Ni-Mn-In based magnetoelectric heterostructure. Kumar P, Kaur D. Nanotechnology; 2021 Aug 13; 32(44):. PubMed ID: 34311446 [Abstract] [Full Text] [Related]
10. A study on the resistance switching of Ag2Se and Ta2O5 heterojunctions using structural engineering. Lee TS, Lee NJ, Abbas H, Hu Q, Yoon TS, Lee HH, Le Shim E, Kang CJ. Nanotechnology; 2018 Jan 19; 29(3):035202. PubMed ID: 29251266 [Abstract] [Full Text] [Related]
11. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering. Zhao X, Li Y, Ai C, Wen D. Materials (Basel); 2019 Apr 18; 12(8):. PubMed ID: 31003535 [Abstract] [Full Text] [Related]
15. Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device. Ho TL, Ding K, Lyapunov N, Suen CH, Wong LW, Zhao J, Yang M, Zhou X, Dai JY. Nanomaterials (Basel); 2022 Jun 21; 12(13):. PubMed ID: 35807964 [Abstract] [Full Text] [Related]
16. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory. Zhao X, Song P, Gai H, Li Y, Ai C, Wen D. Micromachines (Basel); 2020 Sep 24; 11(10):. PubMed ID: 32987957 [Abstract] [Full Text] [Related]