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Journal Abstract Search

450 related items for PubMed ID: 24458727

  • 21.
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  • 23. Carbon-Rich Domain in Hexagonal Boron Nitride: Carrier Mobility Degradation and Anomalous Bending of the Landau Fan Diagram in Adjacent Graphene.
    Onodera M, Watanabe K, Isayama M, Arai M, Masubuchi S, Moriya R, Taniguchi T, Machida T.
    Nano Lett; 2019 Oct 09; 19(10):7282-7286. PubMed ID: 31490080
    [Abstract] [Full Text] [Related]

  • 24. Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors.
    He D, Zhang Y, Wu Q, Xu R, Nan H, Liu J, Yao J, Wang Z, Yuan S, Li Y, Shi Y, Wang J, Ni Z, He L, Miao F, Song F, Xu H, Watanabe K, Taniguchi T, Xu JB, Wang X.
    Nat Commun; 2014 Oct 21; 5():5162. PubMed ID: 25330787
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  • 25. Free-Standing 2D Hexagonal Aluminum Nitride Dielectric Crystals for High-Performance Organic Field-Effect Transistors.
    Yang F, Jin L, Sun L, Ren X, Duan X, Cheng H, Xu Y, Zhang X, Lai Z, Chen W, Dong H, Hu W.
    Adv Mater; 2018 Jul 05; ():e1801891. PubMed ID: 29975434
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  • 26. Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals.
    Lee Y, Chang Y, Ryu H, Kim JH, Watanabe K, Taniguchi T, Kim M, Lee GH.
    ACS Appl Mater Interfaces; 2023 Feb 01; 15(4):6092-6097. PubMed ID: 36577086
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  • 28. Precise, Self-Limited Epitaxy of Ultrathin Organic Semiconductors and Heterojunctions Tailored by van der Waals Interactions.
    Wu B, Zhao Y, Nan H, Yang Z, Zhang Y, Zhao H, He D, Jiang Z, Liu X, Li Y, Shi Y, Ni Z, Wang J, Xu JB, Wang X.
    Nano Lett; 2016 Jun 08; 16(6):3754-9. PubMed ID: 27183049
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  • 29. Van der Waals Epitaxy of III-Nitride Semiconductors Based on 2D Materials for Flexible Applications.
    Yu J, Wang L, Hao Z, Luo Y, Sun C, Wang J, Han Y, Xiong B, Li H.
    Adv Mater; 2020 Apr 08; 32(15):e1903407. PubMed ID: 31486182
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  • 30. Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure.
    Sediri H, Pierucci D, Hajlaoui M, Henck H, Patriarche G, Dappe YJ, Yuan S, Toury B, Belkhou R, Silly MG, Sirotti F, Boutchich M, Ouerghi A.
    Sci Rep; 2015 Nov 20; 5():16465. PubMed ID: 26585245
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  • 31. Coincident-site lattice matching during van der Waals epitaxy.
    Boschker JE, Galves LA, Flissikowski T, Lopes JM, Riechert H, Calarco R.
    Sci Rep; 2015 Dec 14; 5():18079. PubMed ID: 26658715
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  • 32. Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications.
    Moon S, Chang SJ, Kim Y, Okello OFN, Kim J, Kim J, Jung HW, Ahn HK, Kim DS, Choi SY, Lee J, Lim JW, Kim JK.
    ACS Appl Mater Interfaces; 2021 Dec 15; 13(49):59440-59449. PubMed ID: 34792331
    [Abstract] [Full Text] [Related]

  • 33. Enhancement of Carrier Mobility in Multilayer InSe Transistors by van der Waals Integration.
    Li Z, Liu J, Ou H, Hu Y, Zhu J, Huang J, Liu H, Tu Y, Qi D, Hao Q, Zhang W.
    Nanomaterials (Basel); 2024 Feb 19; 14(4):. PubMed ID: 38392755
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  • 34. Large-Area Synthesis of Ferromagnetic Fe5- x GeTe2 /Graphene van der Waals Heterostructures with Curie Temperature above Room Temperature.
    Lv H, da Silva A, Figueroa AI, Guillemard C, Aguirre IF, Camosi L, Aballe L, Valvidares M, Valenzuela SO, Schubert J, Schmidbauer M, Herfort J, Hanke M, Trampert A, Engel-Herbert R, Ramsteiner M, Lopes JMJ.
    Small; 2023 Sep 19; 19(39):e2302387. PubMed ID: 37231567
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  • 35. van der Waals Epitaxy of Antimony Islands, Sheets, and Thin Films on Single-Crystalline Graphene.
    Sun X, Lu Z, Xiang Y, Wang Y, Shi J, Wang GC, Washington MA, Lu TM.
    ACS Nano; 2018 Jun 26; 12(6):6100-6108. PubMed ID: 29746775
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  • 36. Bubble-Free Transfer Technique for High-Quality Graphene/Hexagonal Boron Nitride van der Waals Heterostructures.
    Iwasaki T, Endo K, Watanabe E, Tsuya D, Morita Y, Nakaharai S, Noguchi Y, Wakayama Y, Watanabe K, Taniguchi T, Moriyama S.
    ACS Appl Mater Interfaces; 2020 Feb 19; 12(7):8533-8538. PubMed ID: 32027115
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  • 37. Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures.
    Cheng T, Meng Y, Luo M, Xian J, Luo W, Wang W, Yue F, Ho JC, Yu C, Chu J.
    Small; 2024 Nov 19; 20(48):e2403129. PubMed ID: 39030967
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  • 38. Enhanced nucleation of germanium on graphene via dipole engineering.
    Yoo J, Ahmed T, Chen R, Chen A, Kim YH, Kwon KC, Park CW, Kang HS, Jang HW, Hong YJ, Yang WS, Lee CH.
    Nanoscale; 2018 Mar 28; 10(12):5689-5694. PubMed ID: 29532840
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  • 39. Van der Waals epitaxial growth of two-dimensional PbSe and its high-performance heterostructure devices.
    Jiang J, Cheng R, Yin L, Wen Y, Wang H, Zhai B, Liu C, Shan C, He J.
    Sci Bull (Beijing); 2022 Aug 31; 67(16):1659-1668. PubMed ID: 36546045
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  • 40. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene.
    Kim J, Bayram C, Park H, Cheng CW, Dimitrakopoulos C, Ott JA, Reuter KB, Bedell SW, Sadana DK.
    Nat Commun; 2014 Sep 11; 5():4836. PubMed ID: 25208642
    [Abstract] [Full Text] [Related]

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