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Journal Abstract Search

246 related items for PubMed ID: 24626786

  • 1. Ion-dependent gate dielectric characteristics of ion-conducting SiO(2) solid-electrolytes in oxide field-effect transistors.
    Sun J, Qian C, Huang W, Yang J, Gao Y.
    Phys Chem Chem Phys; 2014 Apr 28; 16(16):7455-60. PubMed ID: 24626786
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  • 2. Mobility enhancement of SnO2 nanowire transistors gated with a nanogranular SiO2 solid electrolyte.
    Sun J, Huang W, Qian C, Yang J, Gao Y.
    Phys Chem Chem Phys; 2014 Jan 21; 16(3):1084-8. PubMed ID: 24288005
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  • 3. Low-voltage self-assembled indium tin oxide thin-film transistors gated by microporous SiO2 treated by H3PO4.
    Dou W, Tan Y.
    RSC Adv; 2019 Sep 26; 9(53):30715-30719. PubMed ID: 35529372
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  • 4. A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors.
    Ma X, Zhang J, Cai W, Wang H, Wilson J, Wang Q, Xin Q, Song A.
    Sci Rep; 2017 Apr 11; 7(1):809. PubMed ID: 28400576
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  • 9. Electrolyte-gated, high mobility inorganic oxide transistors from printed metal halides.
    Garlapati SK, Mishra N, Dehm S, Hahn R, Kruk R, Hahn H, Dasgupta S.
    ACS Appl Mater Interfaces; 2013 Nov 27; 5(22):11498-502. PubMed ID: 24224773
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  • 11. Polymer electrolyte-gated organic field-effect transistors: low-voltage, high-current switches for organic electronics and testbeds for probing electrical transport at high charge carrier density.
    Panzer MJ, Frisbie CD.
    J Am Chem Soc; 2007 May 23; 129(20):6599-607. PubMed ID: 17472381
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  • 12. Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT.
    Zhou C, Wang X, Raju S, Lin Z, Villaroman D, Huang B, Chan HL, Chan M, Chai Y.
    Nanoscale; 2015 May 21; 7(19):8695-700. PubMed ID: 25907959
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  • 13. Polymer Electrolyte Blend Gate Dielectrics for High-Performance Ultrathin Organic Transistors: Toward Favorable Polymer Blend Miscibility and Reliability.
    Nketia-Yawson B, Tabi GD, Noh YY.
    ACS Appl Mater Interfaces; 2019 May 15; 11(19):17610-17616. PubMed ID: 31018635
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  • 14. Dual-Gate Black Phosphorus Field-Effect Transistors with Hexagonal Boron Nitride as Dielectric and Passivation Layers.
    Ra HS, Lee AY, Kwak DH, Jeong MH, Lee JS.
    ACS Appl Mater Interfaces; 2018 Jan 10; 10(1):925-932. PubMed ID: 29256593
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  • 16. Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications.
    Zhu LQ, Sun J, Wu GD, Zhang HL, Wan Q.
    Nanoscale; 2013 Mar 07; 5(5):1980-5. PubMed ID: 23364424
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